# US 2021/0343569 A1 · Method of manufacturing semiconductor package

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- Number: US 2021/0343569 A1
- Document ID: US20210343569A1
- Status: Published application
- Kind: A1
- Application number: 17/111,758
- Filed: 2020-12-04
- Published: 2021-11-04
- Earliest claimed: 2020-05-04
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Yeonga KIM; Seonho LEE
- Web page: https://patentgrep.com/patent/US20210343569A1

## CPC

- H10P 72/74: {using temporarily an auxiliary support}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10P 72/7424: {used as a support during the manufacture of self-supporting substrates}
- H10P 72/743: {used as a support during manufacture of interconnect decals or build up layers}
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- H10P 72/7442: {Separation by peeling}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/9413: {on encapsulations}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

To manufacture a semiconductor package, a package intermediate structure having an element area and a dummy area is formed. A carrier substrate including an adhesion layer is formed. The adhesion layer includes a first area with a first adhesion strength and a second area with a second adhesion strength that is different from the first adhesion strength. The package intermediate structure is supported by the carrier substrate so that the element area is adjacent the first area and the dummy area is adjacent the second area. The package intermediate structure is processed while the package intermediate structure is supported by the carrier substrate.

## Claims

### Claim 1

A method of manufacturing a semiconductor package, the method comprising:
forming a package intermediate structure comprising an element area and a dummy area;
forming a carrier substrate comprising an adhesion layer, wherein the adhesion layer comprises a first area with a first adhesion strength and a second area with a second adhesion strength that is different from the first adhesion strength;
supporting the package intermediate structure by using the carrier substrate by contacting the package intermediate structure to the adhesion layer so that the element area is adjacent the first area and the dummy area is adjacent the second area; and
processing the package intermediate structure when the package intermediate structure is supported by the carrier substrate to reduce warpage of the package intermediate structure.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming of the carrier substrate comprises:
forming a photosensitive film on a support substrate; and
forming the adhesion layer by photocuring a portion of the photosensitive film.

### Claim 3 (depends on 1)

The method of claim 1, wherein the forming of the carrier substrate comprises:
forming a photosensitive film comprising a polydimethylsiloxane (PDMS)-based compound and an acrylate-based photocurable compound on a support substrate; and
exposing a portion of the photosensitive film to UV light to form the first area of the adhesion layer on an exposed area of the photosensitive film and to form the second area of the adhesion layer on a non-exposed area of the photosensitive film,
wherein a light beam of the UV light irradiated to the photosensitive film is axially symmetric with respect to an optical axis of the exposed area of the photosensitive film.

### Claim 4 (depends on 1)

The method of claim 1,
wherein the package intermediate structure comprises a square panel, and
wherein the dummy area comprises a square grid mesh-shaped unit around the element area on the square panel in a plan view.

### Claim 5 (depends on 1)

The method of claim 1, wherein the element area of the package intermediate structure comprises a plurality of unit packages, and wherein the plurality of unit packages comprise:
a circuit board comprising a cavity;
a semiconductor chip in the cavity; and
a redistribution layer overlapping the semiconductor chip in a vertical direction.

### Claim 6 (depends on 1)

The method of claim 1,
wherein the processing of the package intermediate structure comprises forming a backside redistribution layer on the package intermediate structure, and
wherein the warpage of the package intermediate structure during the forming the backside redistribution layer is reduced by support from the carrier substrate.

### Claim 7

A method of manufacturing a semiconductor package, the method comprising:
forming a package intermediate structure comprising a plurality of element areas and a dummy area around a periphery of ones of the plurality of element areas;
forming a carrier substrate comprising a support substrate and an adhesion layer on the support substrate, wherein the adhesion layer comprises a plurality of first areas with a first adhesion strength and a second area with a second adhesion strength, and wherein the second adhesion strength is greater than the first adhesion strength;
supporting the package intermediate structure by using the carrier substrate by adhering the package intermediate structure to the adhesion layer so that the plurality of element areas are adjacent the plurality of first areas and the dummy area is adjacent the second area; and
forming a package structure by processing the package intermediate structure when the package intermediate structure is supported by the carrier substrate.

### Claim 8 (depends on 7)

The method of claim 7, wherein the forming of the carrier substrate comprises:
forming a photosensitive film on the support substrate by coating a photocurable compound comprising a polydimethylsiloxane (PDMS)-based compound and an acrylate-based photocurable compound on the support substrate; and
forming the adhesion layer by exposing the plurality of element areas to UV light so that a photopolymerization reaction occurs in a plurality of areas of the photosensitive film.

### Claim 9 (depends on 8)

The method of claim 8, wherein the photocurable compound comprises PDMS and silicon acrylate.

### Claim 10 (depends on 7)

The method of claim 7,
wherein, in the forming of the carrier substrate, the adhesion layer further comprises a second area edge portion between one first area selected from the plurality of first areas and the second area, and
wherein the second area edge portion has a third adhesion strength, wherein the third adhesion strength is greater than the first adhesion strength and less than the second adhesion strength.

### Claim 11 (depends on 10)

The method of claim 10, wherein the third adhesion strength of the second area edge portion gradually increases as the second area edge portion approaches the second area from the one first area selected from the plurality of first areas.

### Claim 12 (depends on 7)

The method of claim 7,
wherein the forming of the package structure comprises forming a backside redistribution layer on the package intermediate structure, and
wherein warpage of the package intermediate structure during the forming the backside redistribution layer is reduced by support from the carrier substrate.

### Claim 13 (depends on 7)

The method of claim 7, after the forming of the package structure, further comprising:
removing at least a portion of the support substrate from the package structure;
removing the dummy area and the second area of the adhesion layer adhered to the dummy area from the package structure by cutting the package structure when the adhesion layer is adhered to the package structure; and
removing the plurality of first areas of the adhesion layer adjacent to the plurality of element areas.

### Claim 14

A method of manufacturing a semiconductor package, the method comprising:
forming a photosensitive film on a support substrate;
forming an adhesion layer comprising a first area comprising an exposed area of the photosensitive film and a second area comprising a non-exposed area of the photosensitive film by exposing a portion of the photosensitive film to UV light;
adhering a package intermediate structure comprising an element area and a dummy area to the adhesion layer so that the element area is adjacent the first area and the dummy area is adjacent the second area;
forming a package structure from the package intermediate structure by forming a backside structure on the package intermediate structure when the package intermediate structure is supported by the support substrate and the adhesion layer;
removing the dummy area from the package structure by cutting the package structure and the adhesion layer when the adhesion layer is adhered to the element area and the dummy area; and
removing the adhesion layer from the element area.

### Claim 15 (depends on 14)

The method of claim 14, wherein the forming of the photosensitive film comprises coating a photocurable composition comprising a polydimethylsiloxane (PDMS)-based compound and an acrylate-based photocurable compound onto the support substrate.

### Claim 16 (depends on 14)

The method of claim 14, wherein, when forming the photosensitive film, the photosensitive film has a thickness of about 5 μm to about 100 μm.

### Claim 17 (depends on 14)

The method of claim 14,
wherein the adhesion layer is formed so that the first area has a first adhesion strength in a range of about 0.01 kgf/cm to about 0.15 kgf/cm, and the second area has a second adhesion strength, and
wherein the second adhesion strength is greater than the first adhesion strength and is in a range of about 0.15 kgf/cm to 1.5 kgf/cm.

### Claim 18 (depends on 14)

The method of claim 14,
wherein the adhesion layer further comprises a second area edge portion between the first area and the second area,
wherein the first area has a first adhesion strength in a range of about 0.01 kgf/cm to about 0.15 kgf/cm,
wherein the second area has a second adhesion strength,
wherein the second adhesion strength is greater than the first adhesion strength,
wherein the second area edge portion has a third adhesion strength, and
wherein the third adhesion strength is greater than the first adhesion strength and less than the second adhesion strength.

### Claim 19 (depends on 14)

The method of claim 14,
wherein the element area of the package intermediate structure comprises a plurality of unit packages, and the plurality of unit packages comprise a circuit board comprising a cavity and a semiconductor chip accommodated in the cavity, and
wherein the forming of the package structure comprises forming a backside redistribution layer on the semiconductor chip.

### Claim 20 (depends on 14)

The method of claim 14, wherein the support substrate comprises a core insulating layer, and a copper clad laminated (CCL) structure comprising a copper layer on both side surfaces of the core insulating layer.