# US 2021/0343531 A1 · Laser annealing apparatus, inspection method of substrate with crystallized film, and manufacturing method of semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0343531 A1 - Document ID: US20210343531A1 - Status: Published application - Kind: A1 - Application number: 17/378,994 - Filed: 2021-07-19 - Published: 2021-11-04 - Earliest claimed: 2016-08-24 - Assignees: The Japan Steel Works, Ltd. - Applicants: The Japan Steel Works, Ltd. - Inventors: Kenichi OHMORI; Suk-Hwan CHUNG; Ryosuke SATO; Masashi MACHIDA - Web page: https://patentgrep.com/patent/US20210343531A1 ## CPC - H10P 10/14: {Bonding of semiconductor wafers to insulating substrates} - B23K 26/032: {using optical means} - B23K 26/705: {Beam measuring devices} - B23K 31/125: {Weld quality monitoring} - H10D 30/6746: {Amorphous silicon} - H10D 86/0229: {characterised by control of the annealing or irradiation parameters} - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10P 14/3808: {using laser beams} - H10P 14/382: {Scanning of a beam} - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101), a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation. ## Claims ### Claim at position 1 1-26. (canceled) ### Claim 27 A laser annealing apparatus comprising: a laser beam source configured to emit a laser beam to crystallize an amorphous film over a substrate and to form a crystallized film; a projection lens configured to condense the laser beam to irradiate the amorphous film; a probe beam source configured to emit a probe beam; a photodetector configured to detect the probe beam transmitted through the crystallized film; a conveying path configured to convey the substrate to change an irradiation position of the laser beam onto the substrate; and a processing unit configured to change an irradiation position of the probe beam onto the substrate, to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation. ### Claim 28 (depends on 27) The laser annealing apparatus according to claim 27, wherein the processing unit is configured to: compare the standard deviation with a threshold; and determine the substrate to be non-defective when the standard deviation is less than the threshold or determine the substrate to be defective when the standard deviation is equal to or greater than the threshold. ### Claim 29 (depends on 27) The laser annealing apparatus according to claim 27, wherein the processing unit configured to determine the crystalline state based on an average value of the detection values. ### Claim 30 (depends on 27) The laser annealing apparatus according to claim 27, wherein the projection lens is configured to cause the laser beam to form a linear irradiation region on the amorphous film, and the photodetector is configured to detect the probe beam having passed through the projection lens. ### Claim 31 (depends on 27) The laser annealing apparatus according to claim 27, further comprising: a cylindrical lens configured to cause the probe beam to form a linear illumination region on the crystallized film; and a condenser lens configured to condense the probe beam transmitted through the crystallized film on the photodetector. ### Claim 32 (depends on 27) The laser annealing apparatus according to claim 27, wherein the conveying path is configured to convey the substrate while the substrate is being irradiated simultaneously with the laser beam and the probe beam. ### Claim 33 (depends on 27) The laser annealing apparatus according to claim 27, wherein the conveying path comprises a gas-floating unit configured to jet gas to the substrate to float the substrate. ### Claim 34 (depends on 27) The laser annealing apparatus according to claim 27, further comprising a stage configured to hold the substrate, wherein the stage is configured to be moved to convey the substrate along the conveying path, the laser annealing apparatus comprises a carrying-out port which a conveying robot that carries the substrate out from the stage enters, and the irradiation position of the probe beam onto the substrate is changed by the conveying robot carrying the substrate out from the stage. ### Claim 35 (depends on 34) The laser annealing apparatus according to claim 34, wherein the photodetector is configured to detect the probe beam having passed through the crystallized film twice or more. ### Claim 36 A laser annealing apparatus comprising: a laser beam source configured to emit a laser beam to crystallize an amorphous film over a substrate and to form a crystallized film; a projection lens configured to condense the laser beam to irradiate the amorphous film; a stage configured to convey the substrate to change an irradiation position of the laser beam onto the substrate; a probe beam source configured to emit a probe beam; a photodetector configured to detect the probe beam transmitted through the crystallized film outside the stage during a conveying robot takes out the substrate from the stage; and a processing unit configured to determine a crystalline state of the crystallized film based on a detection signal output from the photodetector.