# US 2021/0343530 A1 · Method and device for bonding of substrates > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0343530 A1 - Document ID: US20210343530A1 - Status: Published application - Kind: A1 - Application number: 17/377,993 - Filed: 2021-07-16 - Published: 2021-11-04 - Earliest claimed: 2018-07-31 - Assignees: EV Group E. Thallner GmbH - Applicants: EV Group E. Thallner GmbH - Inventors: Thomas Wagenleitner; Andreas Fehkuhrer - Web page: https://patentgrep.com/patent/US20210343530A1 ## CPC - H10P 10/12: {Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates (preparing SOI wafers using bonding H10P90/1914)} - H10P 90/1914: {using bonding} - B81C 1/00269: {Bonding of solid lids or wafers to the substrate} - H10P 72/0428: {Apparatus for mechanical treatment or grinding or cutting} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) ## Abstract A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber. ## Claims ### Claim 1 A method for bonding a first substrate with a second substrate, said method comprising: a) fixing of the first and second substrates to respective first and second holding devices, the first substrate fixed to a first holding surface of the first holding device and the second substrate fixed to a second holding surface of the second holding device; b) arranging of the first and second substrates relative to each other; c) mutual approaching of the first and second substrates toward each other; d) contacting the first substrate with the second substrate at a bond initiation point; e) generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates; f) influencing the bonding wave during advancing of the bonding wave by deforming the first holding surface of the first holding device by use of mechanical actuators, and thereby deforming the first substrate fixed on the first holding surface. ### Claim 2 (depends on 1) The method according to claim 1, wherein the deforming of the first holding surface includes shrinking and/or stretching of the first holding surface. ### Claim 3 (depends on 1) The method according to claim 1, wherein said bonding is fusion bonding. ### Claim 4 A device for the bonding of a first substrate with a second substrate, said device comprising: a first holding device having a first holding surface for holding and fixing the first substrate; a second holding device having a second holding surface for holding and fixing the second substrate; wherein the first and second holding devices are configured for mutual approaching of the first and second substrates toward each other, for contacting of the first and second substrates at a bond initiation point and for generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates; and influencing means for influencing the bonding wave during the advancing of the bonding wave, wherein the influencing means include mechanical actuators for deforming the first holding surface of the first holding device, and thereby deforming the first substrate fixed on the first holding surface. ### Claim 5 (depends on 4) The device according to claim 4, wherein the mechanical actuators shrink and/or stretch said first holding surface. ### Claim 6 (depends on 4) The device according to claim 4, wherein the mechanical actuators include pneumatic actuators and/or hydraulic actuators and/or piezoelectric actuators. ### Claim 7 (depends on 4) The device according to claim 4, wherein the mechanical actuators are radially and symmetrically distributed around the first holding device. ### Claim 8 (depends on 7) The device according to claim 7, wherein there are at least three mechanical actuators arranged with an angular spacing from one another of 120°. ### Claim 9 (depends on 4) The device according to claim 4, wherein said bonding is fusion bonding. ### Claim 10 A method for bonding a first substrate with a second substrate, said method comprising: a) fixing of the first and second substrates to respective first and second holding devices, the first substrate fixed to a first holding surface of the first holding device and the second substrate fixed to a second holding surface of the second holding device; b) arranging of the first and second substrates relative to each other; c) mutual approaching of the first and second substrates toward each other; d) contacting the first substrate with the second substrate at a bond initiation point; e) generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates; f) influencing the bonding wave during advancing of the bonding wave by controlling spacing between the first and second substrates. ### Claim 11 (depends on 10) The method according to claim 10, wherein said bonding is fusion bonding. ### Claim 12 A device for the bonding of a first substrate with a second substrate, said device comprising: a first holding device having a first holding surface for holding and fixing the first substrate; a second holding device having a second holding surface for holding and fixing the second substrate; wherein the first and second holding devices are configured for mutual approaching of the first and second substrates toward each other, for contacting of the first and second substrates at a bond initiation point and for generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates; and influencing means for influencing the bonding wave during the advancing of the bonding wave, wherein the influencing means include spacing-changing means for changing spacing between the first and second substrates. ### Claim 13 (depends on 12) The device according to claim 12, wherein said bonding is fusion bonding. ### Claim 14 A method for bonding a first substrate with a second substrate, said method comprising: a) fixing of the first and second substrates to respective first and second holding devices, the first substrate fixed to a first holding surface of the first holding device and the second substrate fixed to a second holding surface of the second holding device; b) arranging of the first and second substrates relative to each other; c) mutual approaching of the first and second substrates toward each other; d) contacting the first substrate with the second substrate at a bond initiation point; e) generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates; f) influencing the bonding wave during advancing of the bonding wave by controlling ambient pressure of an atmosphere surrounding the first and second substrates, wherein increasing of said ambient pressure decelerates the advancing of the bonding wave and decreasing of said ambient pressure accelerates the advancing of the bonding wave. ### Claim 15 (depends on 14) The method according to claim 14, wherein said ambient pressure is changed at a rate of more than 1 mbar/s. ### Claim 16 (depends on 14) The method according to claim 14, wherein said ambient pressure is controlled such that a speed of the bonding wave is less than 50 cm/s. ### Claim 17 (depends on 14) The method according to claim 14, wherein said ambient pressure is controlled such that a speed of the bonding wave is reduced by more than 0.1 cm/s. ### Claim 18 (depends on 14) The method according to claim 14, wherein said bonding is fusion bonding. ### Claim 19 A device for the bonding of a first substrate with a second substrate, said device comprising: a first holding device having a first holding surface for holding and fixing the first substrate; a second holding device having a second holding surface for holding and fixing the second substrate; wherein the first and second holding devices are configured for mutual approaching of the first and second substrates toward each other, for contacting of the first and second substrates at a bond initiation point and for generating a bonding wave advancing from the bond initiation point to side edges of the first and second substrates; and influencing means for influencing the bonding wave during the advancing of the bonding wave, wherein the influencing means include a pressure-changing means for controlling ambient pressure of an atmosphere surrounding the first and second substrates, wherein increasing of said ambient pressure decelerates the advancing of the bonding wave and decreasing of said ambient pressure accelerates the advancing of the bonding wave. ### Claim 20 (depends on 19) The method according to claim 19, wherein the pressure-changing means changes said ambient pressure at a rate of more than 1 mbar/s. ### Claim 21 (depends on 19) The device according to claim 19, wherein the pressure-changing means controls said ambient pressure such that a speed of the bonding wave is less than 50 cm/s. ### Claim 22 (depends on 19) The device according to claim 19, wherein the pressure-changing means controls said ambient pressure such that a speed of the bonding wave is reduced by more than 0.1 cm/s. ### Claim 23 (depends on 19) The device according to claim 19, wherein said bonding is fusion bonding.