# US 2021/0341841 A1 · Substrate measuring device and a method of using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0341841 A1 - Document ID: US20210341841A1 - Status: Published application - Kind: A1 - Application number: 17/374,647 - Filed: 2021-07-13 - Published: 2021-11-04 - Earliest claimed: 2018-07-30 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Min-Cheng WU; Chi-Hung LIAO - Web page: https://patentgrep.com/patent/US20210341841A1 ## CPC - G03F 7/2022: {Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure} - G03F 7/70608: {Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist} - G03F 1/42: Alignment or registration features, e.g. alignment marks on the mask substrates - G03F 7/2004: {characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light} - G03F 7/70625: {Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness} - G03F 7/7085: {Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load} - G03F 9/7003: {Alignment type or strategy, e.g. leveling, global alignment} - G03F 9/7065: {Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage. ## Claims ### Claim 1 A lithography projection apparatus comprising: a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further comprising: an emitter comprising: a broad spectrum light source configured to provide light at multiple wavelengths; at least one filter to filter the light at multiple wavelengths to produce multiple beams of light, each of at least some of the multiple beams of light having a different wavelength; and at least one optical fiber including multiple optical fibers, each of the multiple optical fibers being a respective portion of the at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light and wherein an optical fiber of the multiple optical fibers is a material different from the other optical fibers; and a receiver positioned to collect light emitted from the emitter and reflected off of a substrate disposed on the substrate stage. ### Claim 2 (depends on 1) The lithography projection apparatus of claim 1, wherein the different wavelengths are in a range from 10 nm to 2000 nm. ### Claim 3 (depends on 1) The lithography projection apparatus of claim 1, wherein the multiple beams of light include UV light or visible light. ### Claim 4 (depends on 1) The lithography projection apparatus of claim 1, wherein the at least one optical fiber is a single optical fiber including multiple zones, each of the multiple zones being a respective portion of the at least one optical fiber. ### Claim 5 (depends on 4) The lithography projection apparatus of claim 4, wherein the multiple zones in the single optical fiber include strands, the strands of a respective zone being a material different from the strands of other respective zones. ### Claim 6 (depends on 1) The lithography projection apparatus of claim 1, wherein the emitter further includes a shield located at an end of the emitter, the shield configured to block a light path of at least some of the multiple beams of light. ### Claim 7 (depends on 6) The lithography projection apparatus of claim 6, wherein the shield is a metal material. ### Claim 8 (depends on 1) The lithography projection apparatus of claim 1, further comprising a polarizer between the emitter and the substrate. ### Claim 9 A lithography system comprising: a radiation source; a reticle; an optical focusing module; a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further comprising: an emitter comprising: a broad spectrum light source configured to provide light at multiple wavelengths; at least one filter to filter the light at multiple wavelengths to produce multiple beams of light, each of at least some of the multiple beams of light having a different wavelength; at least one optical fiber including multiple optical fibers, each of the multiple optical fibers being a respective portion of the at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass one of the multiple beams of light having a different wavelength and wherein an optical fiber of the multiple optical fibers is a material different from the other optical fibers; and a shield located at an end of the emitter, the shield configured to block a light path of at least some of the multiple beams of light, the shield being a metal material; and a receiver positioned to collect light emitted from the emitter and reflected off of a substrate disposed on the substrate stage. ### Claim 10 (depends on 9) The lithography system of claim 9, wherein the receiving further comprising a filter to exclude light outside of a wavelength band of the filter. ### Claim 11 (depends on 9) The lithography system of claim 9, wherein the different wavelengths are in a range from 10 nm to 2000 nm. ### Claim 12 (depends on 9) The lithography system of claim 9, wherein the multiple beams of light include UV light or visible light. ### Claim 13 A lithography projection apparatus comprising: a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further comprising: an emitter comprising: multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength; and a plurality of optical fibers, one or more of the plurality of optical fibers including multiple optical fibers, each of the multiple optical fibers being a respective portion of the at least one or more of the plurality of optical fibers, wherein each of respective portions of the at least one or more of the plurality of optical fibers is configured to pass a respective one of the multiple beams of light and a material of the multiple optical fibers of one of the plurality of optical fibers is different from a material of the multiple optical fibers of another one of the plurality of optical fibers; and a receiver positioned to collect light emitted from the emitter and reflected off of a substrate disposed on the substrate stage. ### Claim 14 (depends on 13) The lithography projection apparatus of claim 13, wherein the emitter further includes a shield located at an end of the emitter, the shield configured to block a light path of at least some of the multiple beams of light. ### Claim 15 (depends on 14) The lithography projection apparatus of claim 14, wherein the shield is a metal material. ### Claim 16 (depends on 15) The lithography projection apparatus of claim 15 wherein the shield is ring shaped and covers a portion of the multiple optical fibers and exposes a center portion of the multiple optical fibers through a center opening. ### Claim 17 (depends on 16) The lithography projection apparatus of claim 16, wherein at least one of the plurality of optical fibers includes an outer cast enclosing the multiple optical fibers of the at least one of the plurality of optical fibers. ### Claim 18 (depends on 17) The lithography projection apparatus of claim 17, wherein the outer cast comprises a material that is different from the material of the multiple optical fibers. ### Claim 19 (depends on 15) The lithography projection apparatus of claim 15, wherein the shield serves as a frame covering an outer perimeter of a plurality of the multiple optical fibers and the shield includes a center opening exposing a plurality of the multiple optical fibers. ### Claim 20 (depends on 13) The lithography projection apparatus of claim 13, further comprising a polarizer between the emitter and the substrate.