# US 2021/0340673 A1 · Trisilylamine derivatives as precursors for high growth rate silicon-containing films

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- Number: US 2021/0340673 A1
- Document ID: US20210340673A1
- Status: Published application
- Kind: A1
- Application number: 17/373,424
- Filed: 2021-07-12
- Published: 2021-11-04
- Earliest claimed: 2017-09-19
- Assignees: Versum Materials US, LLC
- Applicants: Versum Materials US, LLC
- Inventors: Xinjian Lei; Matthew R. MacDonald; Meiliang Wang
- Web page: https://patentgrep.com/patent/US20210340673A1

## CPC

- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- C23C 16/345: {Silicon nitride}
- C23C 16/402: {Silicon dioxide}
- C23C 16/45542: {Plasma being used non-continuously during the ALD reactions}
- C07F 7/025: {without C-silicon linkages}
- C07F 7/10: containing nitrogen {having a Si-N linkage}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)

## Abstract

Described herein are compositions and methods for forming silicon and oxygen containing films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor selected from the group consisting of Formulae A and B: wherein R, R1, and R2-8 are as defined herein.

## Claims

### Claim 1

A method to deposit a film comprising silicon and nitrogen onto a substrate comprises steps of:
a) providing a substrate in a reactor;
b) introducing into the reactor at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the group consisting of Formula C:
wherein X is a halido group selected from chloride (Cl), bromide (Br), and iodide (I); R and R3-8 are each independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, a C1 to C6 alkylamino group, a C6 to C10 aryl group, a C3 to C10 cyclic alkyl group, a branched C4 to C10 cyclic alkyl group, a C3 to C10 cyclic alkenyl group, a branched C4 to C10 cyclic alkenyl group, a C3 to C6 cyclic alkynyl group, a branched C3 to C6 cyclic alkynyl group, and a C4 to C10 aryl group;
c) purging the reactor with purge gas;
d) introducing a nitrogen-containing source into the reactor; and
e) purging the reactor with purge gas,
wherein steps b through e are repeated until a desired thickness of film is deposited, and;
wherein the method is conducted at one or more temperatures ranging from about 25° C. to 600° C.

### Claim 2 (depends on 1)

The method of claim 1, wherein the compound is selected from the group consisting of N-bromosilyl-tetramethyldisilazane, N-iodosilyl-tetramethyldisilazane, N-bromo(methyl)silyl-tetramethyldisilazane, N-iodo(methyl)silyl-tetramethyldisilazane, N-chlorosilyl-hexamethyldisilazane, N-bromosilyl-hexamethyldisilazane, N-iodosilyl-hexamethyldisilazane, N-bromo(methyl)silyl-hexamethyldisilazane, N-iodo(methyl)silyl-hexamethyldisilazane.

### Claim 3 (depends on 1)

The method of claim 1, wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, nitrogen/argon plasma, nitrogen/helium plasma, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, tert-butylamine, dimethylamine, diethylamine, isopropylamine, diethylamine plasma, dimethylamine plasma, trimethylamine plasma, ethylenediamine plasma, ethanolamine plasma, and mixtures thereof.

### Claim 4 (depends on 1)

The method of claim 1 wherein a density of the film is about 2.1 g/cc or greater.

### Claim 5 (depends on 1)

The method of claim 1 wherein the film further comprises carbon and wherein a carbon content of the film is 0.5 atomic weight percent (at. %) as measured by x-ray photospectroscopy or greater.

### Claim 6 (depends on 1)

The method of claim 1 wherein a density of the film is about 1.8 g/cc or greater.

### Claim 7 (depends on 1)

A composition for depositing a film selected from a silicon nitride or a carbon doped silicon nitride film using a vapor deposition process, the composition comprising: at least one silicon precursor compound selected from the group consisting of Formula C as set forth in claim 1.

### Claim 8 (depends on 7)

The composition of claim 7, wherein the silicon precursor compound is selected from the group consisting of N-bromosilyl-tetramethyldisilazane, N-iodosilyl-tetramethyldisilazane, N-bromo(methyl)silyl-tetramethyldisilazane, N-iodo(methyl)silyl-tetramethyldisilazane, N-chlorosilyl-hexamethyldisilazane, N-bromosilyl-hexamethyldisilazane, N-iodosilyl-hexamethyldisilazane, N-bromo(methyl)silyl-hexamethyldisilazane, N-iodo(methyl)silyl-hexamethyldisilazane and combinations thereof.

### Claim 9 (depends on 7)

The composition of claim 7 wherein the halido group is selected from the group consisting of chloride, bromide, and iodide.