# US 2021/0340669 A1 · Method of monitoring a surface condition of a component

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- Number: US 2021/0340669 A1
- Document ID: US20210340669A1
- Status: Published application
- Kind: A1
- Application number: 17/306,200
- Filed: 2021-05-03
- Published: 2021-11-04
- Earliest claimed: 2020-05-02
- Assignees: Watlow Electric Manufacturing Company
- Applicants: Watlow Electric Manufacturing Company
- Inventors: Jacob LINDLEY; Philip SCHMIDT; Miranda PIZZELLA; Mark D. EVERLY
- Web page: https://patentgrep.com/patent/US20210340669A1

## CPC

- C23C 16/4401: {Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber}
- G01N 25/00: Investigating or analyzing materials by the use of thermal means (G01N3/00 - G01N23/00 take precedence)
- G01N 25/20: by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity (calorimeters per se G01K)
- G06Q 10/04: Forecasting or optimisation specially adapted for administrative or management purposes, e.g. linear programming or "cutting stock problem" (market predictions or forecasting for commercial activities G06Q30/0202)
- G06Q 50/04: Manufacturing
- G01N 25/72: Investigating presence of flaws
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- G06Q: INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR

## Abstract

A method includes providing thermal energy to a component, determining a thermal response of the component in response to providing the thermal energy, and determining a thermal characteristic of the component based on a reference thermal response and the thermal response. The method includes predicting a surface condition of the component based on the thermal characteristic and a predictive analytic model, where the predictive analytic model correlates the thermal characteristic of the component to an estimated surface condition of the component.

## Claims

### Claim 1

A method comprising:
providing thermal energy to a component;
determining a thermal response of the component in response to providing the thermal energy;
determining a thermal characteristic of the component based on a reference thermal response and the thermal response; and
predicting a surface condition of the component based on the thermal characteristic and a predictive analytic model, wherein the predictive analytic model correlates the thermal characteristic of the component to an estimated surface condition of the component.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the thermal characteristic is based on a difference between the reference thermal response and the thermal response.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the thermal characteristic is an emissivity of the component, a thermal coupling among different zones of the component, a thermal gain of the component, an electric resistance-temperature correlation of the component, a gas convective coupling of the component, or a combination thereof.

### Claim 4 (depends on 1)

The method according to claim 1, wherein providing the thermal energy to the component further comprises increasing thermal energy provided to the component.

### Claim 5 (depends on 1)

The method according to claim 1, wherein providing the thermal energy to the component further comprises decreasing thermal energy provided to the component.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the surface condition indicates an amount of material buildup on a surface of the component.

### Claim 7 (depends on 1)

The method according to claim 1, wherein the thermal response is a rate of dissipation of thermal energy by the component.

### Claim 8 (depends on 1)

The method according to claim 1 further comprising varying at least one of an intensity and a duration of the thermal energy to create a thermal signature of the component, wherein the thermal signature is an image representation of the thermal response.

### Claim 9 (depends on 8)

The method according to claim 8 further comprising determining the thermal characteristic of the component based on a reference thermal signature and the thermal signature.

### Claim 10 (depends on 1)

The method according to claim 1, wherein the component is selected from a group consisting of a wall of a semiconductor processing chamber, a liner of the semiconductor processing chamber, a showerhead of the semiconductor processing chamber, a lid of the semiconductor processing chamber, a wall of a fluid heating conduit, a heater surface, and a sheath of a heater.

### Claim 11 (depends on 1)

The method according to claim 1 further comprising measuring a temperature of the component during a predetermined period to determine the thermal response.

### Claim 12 (depends on 11)

The method according to claim 11 further comprising determining a dissipation of energy by the component based on a change in the temperature of the component during the predetermined period.

### Claim 13 (depends on 12)

The method according to claim 12 further comprising determining a change in emissivity of the component based on the change in the temperature of the component during the predetermined period.

### Claim 14 (depends on 1)

The method according to claim 1, wherein the thermal response of the component is determined in response to a temperature of the component being equal to a predetermined temperature.

### Claim 15

A system comprising:
a component;
a thermal control system configured to provide thermal energy to the component; and
a controller configured to:
determine a thermal response of the component in response to providing the thermal energy, wherein the thermal response is a rate of dissipation of the thermal energy by the component;
determine a thermal characteristic of the component based on a difference between a reference thermal response and the thermal response, wherein the reference thermal response is a reference rate of dissipation of the thermal energy of the component in response to providing the thermal energy; and
predict an amount of material buildup on a surface of the component based on the thermal characteristic and a predictive analytic model, wherein the predictive analytic model correlates the thermal characteristics of the component to an estimated surface condition of the component.

### Claim 16 (depends on 15)

The system according to claim 15, wherein the thermal characteristic is an emissivity of the component, a thermal coupling among different zones of the component, a thermal gain of the component, an electric resistance-temperature correlation of the component, a gas convective coupling of the component, or a combination thereof.

### Claim 17 (depends on 15)

The system according to claim 15, wherein the component is selected from a group consisting of a wall of a semiconductor processing chamber, a liner of the semiconductor processing chamber, a showerhead of the semiconductor processing chamber, a lid of the semiconductor processing chamber, a wall of a fluid heating conduit, a heater surface, and a sheath of a heater.

### Claim 18 (depends on 15)

The system according to claim 15, wherein the thermal control system further comprises a heater configured to provide the thermal energy to the component.

### Claim 19 (depends on 15)

The system according to claim 15, wherein the predictive analytic model is generated during a training routine.

### Claim 20 (depends on 15)

The system according to claim 15, wherein the component is a semiconductor processing system component.
