# US 2021/0340668 A1 · Method for conditioning a plasma processing chamber > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0340668 A1 - Document ID: US20210340668A1 - Status: Published application - Kind: A1 - Application number: 17/273,649 - Filed: 2019-09-16 - Published: 2021-11-04 - Earliest claimed: 2018-09-21 - Assignees: Lam Research Corporation - Applicants: Lam Research Corporation - Inventors: Chiara Helena Catherina Giammanco MACPHERSON; Eric PAPE - Web page: https://patentgrep.com/patent/US20210340668A1 ## CPC - C23C 16/401: {containing silicon} - C23C 16/0245: {by etching with a plasma} - C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof} - C23C 16/45557: {Pulsed pressure or control pressure} - H10P 14/6514: {by exposure to a plasma} - H10P 70/12: {by dry cleaning only (H10P70/52 takes precedence)} - H10P 72/722: {Details of electrostatic chucks} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method for conditioning a plasma processing chamber including a chuck is provided. The method comprises a plurality of cycles, wherein each cycle comprises cleaning an interior of the plasma processing chamber and the chuck and forming a silicon oxide based coating on the interior of the plasma processing chamber and the chuck. The silicon oxide based coating has a first layer and a second layer. ## Claims ### Claim 1 A method for conditioning a plasma processing chamber including a chuck, the method comprising a plurality of cycles, wherein each cycle comprises: cleaning an interior of the plasma processing chamber and the chuck; and forming a silicon oxide based coating on the interior of the plasma processing chamber and the chuck, the silicon oxide based coating having a first layer and a second layer. ### Claim 2 (depends on 1) The method, as recited in claim 1, wherein the forming the silicon oxide based coating comprises: depositing a silicon oxide based coating on the interior of the plasma processing chamber and on the chuck; and providing an oxygen based burn of the silicon oxide based coating to form the silicon oxide based coating into the first layer of the silicon oxide based coating not changed by the oxygen burn and the second layer of the silicon oxide based coating changed by the oxygen burn. ### Claim 3 (depends on 2) The method, as recited in claim 2, wherein the providing the oxygen based burn comprises: providing a burn gas comprising oxygen; and transforming the burn gas into a plasma. ### Claim 4 (depends on 3) The method, as recited in claim 3, wherein the oxygen based burn modifies the second layer of the silicon oxide based coating to improve uniformity. ### Claim 5 (depends on 3) The method, as recited in claim 3, wherein the providing the oxygen based burn further comprises providing a bias of less than 400 volts. ### Claim 6 (depends on 2) The method, as recited in claim 2, further comprising placing a substrate in the plasma processing chamber after forming the silicon oxide based coating; plasma processing the substrate in the plasma processing chamber, wherein the silicon oxide based coating protects the interior of the plasma processing chamber and the chuck during the plasma processing of the substrate; and removing the substrate from the plasma processing chamber. ### Claim 7 (depends on 2) The method, as recited in claim 2, wherein the cleaning of the interior of the plasma processing chamber and the chuck is a waferless cleaning, the waferless cleaning comprising: providing a cleaning gas; and transforming the cleaning gas into a plasma, wherein the plasma removes residue on the interior of the plasma processing chamber and on the chuck. ### Claim 8 (depends on 1) The method, as recited in claim 1, wherein forming the silicon oxide based coating comprises: depositing the first layer on the interior of the plasma processing chamber and on the chuck at a first pressure; and depositing the second layer on the interior of the plasma processing chamber and on the chuck over the first layer at a second pressure that is less than the first pressure. ### Claim 9 (depends on 8) The method, as recited in claim 8, wherein the depositing the first layer comprises: providing a deposition gas comprising a silicon containing component and an oxygen containing component; and transforming the deposition gas into a plasma under a pressure greater than a first threshold pressure, wherein the plasma causes the first layer to be deposited on the interior of the plasma processing chamber and on the chuck. ### Claim 10 (depends on 9) The method, as recited in claim 9, wherein the depositing the second layer comprises: providing the deposition gas comprising the silicon containing component and an oxygen containing component; and transforming the deposition gas into the plasma under a pressure less than a second threshold pressure, wherein the second threshold pressure is less than the first threshold pressure, wherein the plasma causes the second layer to be deposited on the interior of the plasma processing chamber and on the chuck. ### Claim 11 (depends on 10) The method, as recited in claim 10, wherein the first threshold pressure is 40 mTorr and the second threshold pressure is 20 mTorr. ### Claim 12 (depends on 9) The method, as recited in claim 9, wherein the first threshold pressure is 40 mTorr. ### Claim 13 (depends on 8) The method, as recited in claim 8, wherein the forming the silicon oxide based coating further comprises depositing an initial layer on the interior of the plasma processing chamber and on the chuck at an initial pressure before depositing the first layer, wherein the initial pressure is less than the first pressure, wherein the first layer is deposited over the initial layer. ### Claim 14 (depends on 13) The method, as recited in claim 13, wherein the first pressure is greater than 20 mTorr and the second pressure and initial pressure are less than 20 mTorr. ### Claim 15 (depends on 13) The method, as recited in claim 13, wherein the first pressure is greater than 40 mTorr and the initial pressure and second pressure are less than 20 mTorr. ### Claim 16 (depends on 8) The method, as recited in claim 8, wherein the first pressure is greater than 20 mTorr and the second pressure is less than 20 mTorr. ### Claim 17 (depends on 8) The method, as recited in claim 8, wherein the first pressure is greater than 40 mTorr and the second pressure is less than 20 mTorr.