# US 2021/0340664 A1 · Metal mask material, method for manufacturing same, and metal mask

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- Number: US 2021/0340664 A1
- Document ID: US20210340664A1
- Status: Published application
- Kind: A1
- Application number: 17/280,765
- Filed: 2019-09-27
- Published: 2021-11-04
- Earliest claimed: 2018-09-27
- Assignees: Nippon Steel Chemical & Material Co., Ltd.
- Applicants: NIPPON STEEL Chemical & Material Co., Ltd.
- Inventors: Mitsuharu YONEMURA; Naoki FUJIMOTO; Keita KIMURA; Hiroto UNNO
- Web page: https://patentgrep.com/patent/US20210340664A1

## CPC

- C21D 8/0226: {Hot rolling}
- C21D 1/74: Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
- C21D 6/001: {containing Ni (C21D6/004 takes precedence)}
- C21D 6/007: {containing Co}
- C21D 8/02: during manufacturing of plates or strips (C21D8/12 takes precedence)
- C21D 8/0236: {Cold rolling}
- C21D 8/0242: {Flattening; Dressing; Flexing}
- C21D 8/0252: {with application of tension}
- C21D 8/0268: {between cold rolling steps}
- C21D 9/46: for sheet metals
- C22C 38/002: {containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60}
- C22C 38/02: containing silicon
- C22C 38/04: containing manganese
- C22C 38/06: containing aluminium
- C22C 38/08: containing nickel {(C22C38/105 takes precedence)}
- C22C 38/10: containing cobalt
- C22C 38/105: {containing Co and Ni}
- C23C 14/042: {using masks}
- C23C 16/042: {using masks}
- C23F 1/02: Local etching
- C21D 2201/05: Grain orientation
- H10K 71/166: {using selective deposition, e.g. using a mask}
- H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour
- C21D: MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING (surface treatment of metallic material involving at least one process provided for in class C23 and at least one process covered by this subclass C23F17/00; unidirectional solidification of eutectic materials or unidirectional demixing of eutectoid materials C30B)
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A metal mask material for OLED use reduced in amount warpage due to etching, a method for manufacturing the same, and a metal mask are provided. The metal mask material and metal mask of the present invention contain, by mass %, Ni: 35.0 to 37.0% and Co: 0.00 to 0.50%, have a balance of Fe and impurities, have thicknesses of 5.00 μm or more and 50.00 μm or less, and have amounts of warpage defined as maximum values in amounts of rise of four corners of a square shaped sample of the metal mask material of 100 mm sides when etching the sample from one surface until the thickness of the sample becomes ⅖ and placing the etched sample on a surface plate of 5.0 mm or less.

## Claims

### Claim 1

A metal mask material containing, by mass %, Ni: 35.0 to 37.0% and Co: 0.00 to 0.50% and having a balance of Fe and impurities and
having a thickness of 5.00 μm or more and 50.00 μm or less,
and wherein,
when etching a sample of the metal mask material of a square shape of 100 mm sides from one surface until the thickness of the sample becomes ⅖ and placing the etched sample on a surface plate, an amount of warpage, as defined by a maximum value in amounts by which four corners of the sample were lifted up, is 5.0 mm or less.

### Claim 2 (depends on 1)

The metal mask material according to claim 1 further containing, by mass %, C: 0.05% or less and Ca: 0.0005% or less.

### Claim 3 (depends on 1)

The metal mask material according to claim 1, wherein the impurities are limited to Si: 0.30% or less, Mn: 0.70% or less, Al: 0.01% or less, Mg: 0.0005% or less, P: 0.030% or less, and S: 0.015% or less.

### Claim 4 (depends on 1)

The metal mask material according to claim 1, wherein an average {111} lattice spacing from 1.45 μm to 7.11 μm below the surface satisfies the following formula (1-1) and formula (1-2):
ΔD≤0.00030 (1-1)
ΔD=|DM−DL| (1-2)
where, the definitions of DM and DL in the above formulas are as follows:
DM: average {111} lattice spacing (units: nm) obtained by grazing incidence X-ray diffraction technique;
DL: reference value of {111} lattice spacing (units: urn) or average {111} lattice spacing (units: nm) calculated from a lattice constant of bulk.

### Claim 5 (depends on 1)

The metal mask material according to claim 1, wherein the following formula (2-1) is satisfied.
X(Hw111, t)=Hw111/√{square root over (t/25)}≤0. 545 (2-1)
where, in the formula, Hw111 is an average FWHM of the {111} plane from 1.45 μm to 7.11 μm below the surface obtained by the grazing incidence X-ray diffraction technique and “t” is a thickness of the metal mask material (μm).

### Claim 6 (depends on 1)

The metal mask material according to claim 1, wherein either of the following formula (3-1) or formula (3-2) is satisfied.
rmax<9.5 (3-1)
rmax≥20 (3-2)
r=I111/I200 (3-3)
where, I111 is an integrated intensity of the {111} plane from 1.45 μm to 7.11 μm below the surface obtained by the grazing incidence X-ray diffraction technique;
I200 is an integrated intensity of the {200} plane from 1.45 μm to 7.11 μm below the surface obtained by the grazing incidence X-ray diffraction technique;
rmax is a maximum value of a ratio of integrated intensities defined by the formula (3-3).

### Claim 7 (depends on 1)

The metal mask material according to claim 1, wherein the following formula (4-1) to formula (4-3) are satisfied:
0.385≤I200/{I111+I200+I220+I311} (4-1)
I311/{I111+I200+I220+I311}≤0.08 (4-2)
0.93≤{I220+I200}/{I111+I200+I220+I311} (4-3)
where, in the formulas, I200 is the diffraction intensity of the {200} plane obtained by the focusing method, I111 is the diffraction intensity of the {111} plane, I220 is the diffraction intensity of the {220} plane, and I311 is the diffraction intensity of the {311} plane.

### Claim 8 (depends on 1)

The metal mask material according to claim 1, wherein an error calculated when measuring a residual stress using an X-ray stress measurement technique satisfies the following formula (5-1),
σ≤α+β×R+γ×R2 (5-1)
where, α=211.1; β=5.355; γ=0.034886; R in the above formula is the value of the residual stress analyzed using X-ray stress measurement technique method, and δ is the error analyzed when measuring the residual stress using the X-ray stress measurement technique.

### Claim 9 (depends on 1)

The metal mask material according to claim 1, wherein when measuring stress using the X-ray stress measurement technique, the relationship between an angle (Ψ (deg)) formed by a plane normal of the metal mask material and the {220} plane and a diffraction peak position of the {220} plane (2θ (deg)) is expressed by the following formula (6-5) and coefficients “b”, “c”, “d”, and “e” of the formula (6-5) satisfy the following formula (6-1) to formula (6-4),
b/I≤0.09 (6-1)
0.02≤|c| (6-2)
d/I≤12 (6-3)
2≥|e|/I (6-4)
2θ=a+b×sin2 Ψ+c×sin(d×sin2 Ψ+e) (6-5)
where, I=(z×t3)/12
t: thickness (μm)
z: 0.000768.

### Claim 10 (depends on 4)

The metal mask material according to claim 4, wherein a thickness of an oxide film measured by Auger electron spectrometry is 4.5 nm or less.

### Claim 11 (depends on 4)

The metal mask material according to claim 4, wherein a 0.2% yield strength is 330 MPa or more and 850 MPa or less.

### Claim 12 (depends on 4)

The metal mask material according to claim 4, wherein an average arithmetic surface roughness Ra of a direction perpendicular to the rolling direction is 0.02 μm or more and 0.10 μm or less.

### Claim 13 (depends on 1)

A method for manufacturing a metal mask material according to claim 1, comprising
a process of melting an alloy having a composition of said metal mask material,
a process of obtaining a slab from the melted alloy,
a coiling process of hot rolling and coiling the slab to obtain hot rolled coil,
a process of alternately cold rolling and annealing the hot rolled coil at least once each after the coiling process to obtain steel foil of a thickness of 5.00 to 50.00 μm, and
a tension annealing process,
the tension annealing process being performed after a final rolling process, a rolling reduction in the final rolling process being 30.0% or more and 95.0% or less, and the tension annealing process being performed by an annealing temperature of 300 to 900° C. in a reducing atmosphere.

### Claim 14 (depends on 1)

A metal mask using a metal mask material of claim 1.