# US 2021/0333307 A1 · Cantilever-Type Probe with Multiple Metallic Coatings > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0333307 A1 - Document ID: US20210333307A1 - Status: Published application - Kind: A1 - Application number: 16/858,062 - Filed: 2020-04-24 - Published: 2021-10-28 - Earliest claimed: 2020-04-24 - Assignees: KLA Corporation - Applicants: KLA Corporation - Inventors: Hongshuo Zou; Nanchang Zhu; Hai-Yang You - Web page: https://patentgrep.com/patent/US20210333307A1 ## CPC - G01R 1/06727: {Cantilever beams} - G01R 1/06755: {Material aspects} - G01R 1/06772: {High frequency probes} - G01R 3/00: Apparatus or processes specially adapted for the manufacture {or maintenance} of measuring instruments {, e.g. of probe tips} - G01R 27/14: Measuring resistance by measuring current or voltage obtained from a reference source (G01R27/16, G01R27/20, G01R27/22 take precedence) - G01R 31/2831: {Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates (G01R31/318511 takes precedence; testing during manufacture H10P74/00)} - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) ## Abstract A cantilever-type probe with multiple metallic coatings is disclosed. The cantilever-type probe includes at least one probe pin. A first metallic coating is disposed upon a tip of the probe pin, and a second metallic coating is disposed upon a root of the probe pin. The second metallic coating is in contact with the first metallic coating and comprises a softer (more flexible) metal than the first metallic coating. ## Claims ### Claim 1 A cantilever-type probe for measuring one or more characteristics of a sample substrate, comprising: at least one probe pin; a first metallic coating disposed upon a tip of the at least one probe pin; and a second metallic coating disposed upon a root of the at least one probe pin, wherein the second metallic coating is in contact with the first metallic coating, and wherein the second metallic coating comprises a softer metal than the first metallic coating. ### Claim 2 (depends on 1) The cantilever-type probe of claim 1, wherein the at least one probe pin comprises at least one of silicon (Si) or silicon dioxide (SiO2). ### Claim 3 (depends on 1) The cantilever-type probe of claim 1, wherein the first metallic coating comprises at least one of ruthenium (Ru) or tungsten (W). ### Claim 4 (depends on 1) The cantilever-type probe of claim 1, wherein the second metallic coating comprises gold (Au). ### Claim 5 (depends on 1) The cantilever-type probe of claim 1, wherein the second metallic coating overlaps a portion of the first metallic coating so that the second metallic coating is in contact with the first metallic coating. ### Claim 6 (depends on 1) The cantilever-type probe of claim 1, wherein the first metallic coating overlaps a portion of the second metallic coating so that the second metallic coating is in contact with the first metallic coating. ### Claim 7 (depends on 1) The cantilever-type probe of claim 1, wherein the cantilever-type probe is configured to measure at least one film resistance characteristic of the sample substrate. ### Claim 8 A sensor for measuring one or more characteristics of a sample substrate, comprising: a sensor base; a plurality of probe pins extending from the sensor base; a first metallic coating disposed upon a tip of at least one probe pin of the plurality of probe pins; and a second metallic coating disposed upon a root of the at least one probe pin, wherein the second metallic coating is in contact with the first metallic coating, and wherein the second metallic coating comprises a softer metal than the first metallic coating. ### Claim 9 (depends on 8) The sensor of claim 8, wherein the sensor base and the plurality of probe pins comprise at least one of silicon (Si) or silicon dioxide (SiO2). ### Claim 10 (depends on 8) The sensor of claim 8, wherein the first metallic coating comprises at least one of ruthenium (Ru) or tungsten (W). ### Claim 11 (depends on 8) The sensor of claim 8, wherein the second metallic coating comprises gold (Au). ### Claim 12 (depends on 8) The sensor of claim 8, wherein the second metallic coating overlaps a portion of the first metallic coating so that the second metallic coating is in contact with the first metallic coating. ### Claim 13 (depends on 8) The sensor of claim 8, wherein the first metallic coating overlaps a portion of the second metallic coating so that the second metallic coating is in contact with the first metallic coating. ### Claim 14 (depends on 8) The sensor of claim 8, wherein the sensor is a cantilever-type probe. ### Claim 15 (depends on 8) The sensor of claim 8, wherein the sensor is a microscopic four-point probe or a microscopic twelve-point probe. ### Claim 16 (depends on 8) The sensor of claim 8, wherein the sensor is configured to measure at least one film resistance characteristic of the sample substrate. ### Claim 17 A method of manufacturing a cantilever-type probe, comprising: forming at least one probe pin; disposing a first metallic coating upon a tip of the at least one probe pin; and disposing a second metallic coating upon a root of the at least one probe pin, wherein the second metallic coating is in contact with the first metallic coating, and wherein the second metallic coating comprises a softer metal than the first metallic coating. ### Claim 18 (depends on 17) The method of claim 17, wherein the at least one probe pin is formed by etching a silicon on insulator (SOI) wafer. ### Claim 19 (depends on 17) The method of claim 17, wherein the first metallic coating comprises at least one of ruthenium (Ru) or tungsten (W) disposed upon the tip of the at least one probe pin by performing sputtering and lift-off processes. ### Claim 20 (depends on 17) The method of claim 17, wherein the second metallic coating comprises gold (Au) disposed upon the tip of the at least one probe pin by performing sputtering and lift-off processes.