Particle beam apparatus, defect repair method, lithographic exposure process and lithographic system
AssigneeASML Netherlands B.V.
InventorsRuben Cornelis MAAS, Alexey Olegovich POLYAKOV, Teis Johan COENEN
Life of this patent
Estimating the term…
Loading patent…
AssigneeASML Netherlands B.V.
InventorsRuben Cornelis MAAS, Alexey Olegovich POLYAKOV, Teis Johan COENEN
Estimating the term…
A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.
A particle beam apparatus comprising:
A defect repair method comprising:
The method according to claim 15, wherein the inspecting the one or more defect target areas comprises scanning the one or more defect target areas with a particle beam, and/or wherein the modifying the patterned resist layer at the one or more defects comprises exposing the one or more defects to a particle beam.
A computer product comprising a non-transitory computer-readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
Dependencies are inferred from the claim text.