System And Methods Using An Inline Surface Engineering Source

A method of processing a workpiece, comprising:

• introducing a gas comprising an etching species into a secondary plasma source located proximate the workpiece in an end station;
• creating a plasma within the secondary plasma source, wherein ions and radicals from the plasma exit the secondary plasma source and react with a native oxide layer on a surface of the workpiece;
• heating the workpiece after the reacting, wherein heat causes sublimation of the native oxide layer on the workpiece;
• and
• using an ion beam from an ion source, different from the secondary plasma source, to perform an additional process on the workpiece, wherein the workpiece remains in the end station.

A method of etching a workpiece, comprising:

• introducing a gas comprising an etching species into a secondary plasma source located proximate the workpiece;
• creating a plasma within the secondary plasma source, wherein ions and radicals from the plasma exit the secondary plasma source toward a portion of the workpiece and form a film on the portion of the workpiece;
• and
• using an ion beam from an ion source, different from the secondary plasma source, to provide energy to etch the workpiece.

A method of depositing material on a workpiece, comprising:

• introducing a process gas into a secondary plasma source located proximate the workpiece;
• creating a plasma within the secondary plasma source, wherein ions and radicals from the plasma exit the secondary plasma source toward a portion of the workpiece and form a film on the portion of the workpiece;
• and
• using an ion beam from an ion source, different from the secondary plasma source, to provide energy to deposit the material on the workpiece.

A method of processing a workpiece, comprising:

• processing a workpiece using an ion beam;
• introducing a process gas into a secondary plasma source located proximate the workpiece in an end station;
• creating a plasma within the secondary plasma source, wherein ions and radicals from the plasma exit the secondary plasma source and react with a surface of the workpiece;
• and
• heating the workpiece after the reacting, wherein heat repairs damage caused by the ion beam on the surface of the workpiece.