Memory driving device
AssigneesJiangsu Advanced Memory Technology Co., Ltd., Jiangsu Advanced Memory Semiconductor Co., Ltd., Alto Memory Technology Corporation
InventorJui-Jen WU
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Abstract
A memory driving device, comprising a switch, a voltage setting circuit, and a bias control circuit. The switch is coupled to a memory at a node. The voltage setting circuit is coupled to the switch and configured to provide a set signal during a first period to turn on the switch, so as to generate current flowing through the switch to the memory unit. The bias control circuit is respectively coupled to the switch and the node, and, during a second period, continuously provides a bias signal to control the switch so as to adaptively adjust a value of the setting current of the switch. The configuration setting terminal is coupled to the voltage setting circuit and the bias control circuit to control the first and the second period.
Claims13
A memory drive device, comprising:
- a first switch coupled to a memory unit at a first node;
- a voltage setting circuit coupled to the first switch, the voltage setting circuit providing a setting signal to turn on the first switch during a first period so as to generate a setting current flowing to the memory unit through the first switch;
- a bias control circuit respectively coupled to the first switch and the first node, the bias control circuit continuously detecting a voltage at the first node during a second period, and continuously providing a bias signal to control the first switch so as to adaptively adjust a value of the setting current of the first switch;
- and
- a configuration setting terminal coupled to the voltage setting circuit and the bias control circuit so as to control the first period and the second period.
Dependencies are inferred from the claim text.