Specific type ion source and plasma film forming apparatus
AssigneesNational University Corporation Kyoto Institute of Technology, Tokyo Electron Limited
InventorHaruhiko Himura
Life of this patent
Estimating the term…
Abstract
A specific type ion source 10 includes a chamber 11; a source gas supply 12 configured to supply an O2 gas into the chamber 11; a plasma forming device 13 configured to form plasma within the chamber 11 by applying a high frequency power to the O2 gas supplied into the chamber 11; an accelerator 14 configured to extract ions of an O element included in the plasma formed within the chamber 11 to an outside of the chamber 11, and configured to accelerate the extracted ions in a direction indicated by an arrow AR14; and a sorting device 15 configured to sort out a specific type ion O− from the ions accelerated by the accelerator 14 and configured to output the sorted specific type ion in a direction indicated by an arrow AR12.
Claims13
A specific type ion source, comprising:
- a chamber;
- a first source gas supply configured to supply a first source gas into the chamber;
- a plasma forming device configured to form plasma within the chamber by applying a high frequency power to the first source gas supplied into the chamber;
- an accelerator configured to extract ions of an element of the first source gas included in the plasma formed within the chamber to an outside of the chamber, and configured to accelerate the extracted ions in a preset first direction;
- and
- a sorting device configured to sort out a specific type ion from the ions accelerated by the accelerator and configured to output the sorted specific type ion in a predetermined second direction.
A plasma film forming apparatus, comprising:
- a specific type ion source comprising a chamber;
- a first source gas supply configured to supply a first source gas into the chamber;
- a plasma forming device configured to form plasma within the chamber by applying a high frequency power to the first source gas supplied into the chamber;
- an accelerator configured to extract ions of an element of the first source gas included in the plasma formed within the chamber to an outside of the chamber, and configured to accelerate the extracted ions in a preset first direction;
- and a sorting device configured to sort out a specific type ion from the ions accelerated by the accelerator and configured to output the sorted specific type ion in a predetermined second direction;
- a second source gas supply configured to supply a second source gas;
- and
- a reactor configured to allow the specific type ion supplied by the specific type ion source to react with the second source gas.
Dependencies are inferred from the claim text.