Back to results
US 2021/0304940 A1Published application
Magnetoresistive effect element
AssigneeTDK Corporation
InventorsTsuyoshi SUZUKI, Shinto ICHIKAWA, Katsuyuki NAKADA
Life of this patent
Estimating the term…
Abstract
A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, wherein a crystal structure of the non-magnetic layer is a spinel structure, wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure, and wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W.
Claims16
A magnetoresistive effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein a crystal structure of the non-magnetic layer is a spinel structure,
- wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure, and
- wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W.
4 more elements
Dependencies are inferred from the claim text.