Imaging element, stacked imaging element, and solid-state imaging apparatus

An imaging element comprising:

• a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, wherein
• the photoelectric conversion unit further includes a charge storage electrode arranged apart from the first electrode and arranged to face the photoelectric conversion layer through an insulating layer, and
• a width of a region of the photoelectric conversion layer positioned between the first electrode and the charge storage electrode is narrower than a width of a region of the photoelectric conversion layer positioned between the imaging element and an adjacent imaging element.

An imaging element comprising:

• a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, wherein
• the photoelectric conversion unit further includes a charge storage electrode arranged apart from the first electrode and arranged to face the photoelectric conversion layer through an insulating layer, and
• a charge movement control electrode is formed in a region facing, through the insulating layer, a region of the photoelectric conversion layer positioned between the imaging element and an adjacent imaging element.

An imaging element comprising:

• a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, wherein
• the photoelectric conversion unit further includes a charge storage electrode arranged apart from the first electrode and arranged to face the photoelectric conversion layer through an insulating layer, and
• a charge movement control electrode is formed, in place of the second electrode, over a region of the photoelectric conversion layer positioned between the imaging element and an adjacent imaging element.

An imaging element comprising:

• a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, wherein
• the photoelectric conversion unit further includes a charge storage electrode arranged apart from the first electrode and arranged to face the photoelectric conversion layer through an insulating layer, and
• a value of a dielectric constant of an insulating material included in a region between the first electrode and the charge storage electrode is higher than a value of a dielectric constant of an insulating material included in a region between the imaging element and an adjacent imaging element.

An imaging element comprising:

• a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, wherein
• the photoelectric conversion unit further includes a charge storage electrode arranged apart from the first electrode and arranged to face the photoelectric conversion layer through an insulating layer, and
• a thickness of a region of the insulating layer positioned between the first electrode and the charge storage electrode is thinner than a thickness of a region of the insulating layer positioned between the imaging element and an adjacent imaging element.

An imaging element comprising:

• a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, wherein
• the photoelectric conversion unit further includes a charge storage electrode arranged apart from the first electrode and arranged to face the photoelectric conversion layer through an insulating layer, and
• a thickness of a region of the photoelectric conversion layer positioned between the first electrode and the charge storage electrode is thicker than a thickness of a region of the photoelectric conversion layer positioned between the imaging element and an adjacent imaging element.

An imaging element comprising:

• a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, wherein
• the photoelectric conversion unit further includes a charge storage electrode arranged apart from the first electrode and arranged to face the photoelectric conversion layer through an insulating layer, and
• a fixed charge amount in a region of an interface between the photoelectric conversion layer and the insulating layer positioned between the first electrode and the charge storage electrode is less than a fixed charge amount in a region of an interface between the photoelectric conversion layer and the insulating layer positioned between the imaging element and an adjacent imaging element.

An imaging element comprising:

• a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, wherein
• the photoelectric conversion unit further includes a charge storage electrode arranged apart from the first electrode and arranged to face the photoelectric conversion layer through an insulating layer, and
• a value of charge mobility in a region of the photoelectric conversion layer positioned between the first electrode and the charge storage electrode is larger than a value of charge mobility in a region of the photoelectric conversion layer positioned between the imaging element and an adjacent imaging element.