# US 2021/0280781 A1 · Electronic device and method for manufacturing electronic device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2021/0280781 A1
- Document ID: US20210280781A1
- Status: Published application
- Kind: A1
- Application number: 16/984,688
- Filed: 2020-08-04
- Published: 2021-09-09
- Earliest claimed: 2020-03-04
- Assignees: SK hynix Inc.
- Applicants: SK hynix Inc.
- Inventors: Myoung Sub KIM; Tae Hoon KIM; Beom Seok LEE; Seung Yun LEE; Hwan Jun ZANG; Byung Jick CHO; Ji Sun HAN
- Web page: https://patentgrep.com/patent/US20210280781A1

## CPC

- H10B 61/10: {comprising components having two electrodes, e.g. diodes or MIM elements}
- H10N 70/841: {Electrodes}
- H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B 63/20: {comprising selection components having two electrodes, e.g. diodes}
- H10B 63/84: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays}
- H10N 50/01: Manufacture or treatment
- H10N 50/10: Magnetoresistive devices
- H10N 50/80: Constructional details
- H10N 70/011: {Manufacture or treatment of multistable switching devices}
- H10N 70/063: {by etching of pre-deposited switching material layers, e.g. lithography}
- H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
- H10N 70/8828: {Tellurides, e.g. GeSbTe}
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

## Claims

### Claim 1

A method for manufacturing an electronic device including a semiconductor memory, the method comprising:
forming a first carbon electrode material;
surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material; and
forming a second carbon electrode material on a surface of the surface-treated first carbon electrode material, wherein the second carbon electrode material has a thickness that is less than a thickness of the first carbon electrode material.

### Claim 2 (depends on 1)

The method of claim 1, wherein surface-treating the first carbon electrode material includes performing an etching process, an ion injection process, or a doping process.

### Claim 3 (depends on 1)

The method of claim 1, wherein the thickness of the second carbon electrode material is 100 Å or less.

### Claim 4 (depends on 1)

The method of claim 1, wherein the second carbon electrode material has a surface roughness of 30 Å or less.

### Claim 5 (depends on 1)

The method of claim 1, wherein the first carbon electrode material and the second carbon electrode material have substantially the same resistance.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first carbon electrode material and the second carbon electrode material have different resistances.

### Claim 7 (depends on 1)

The method of claim 1, wherein the first carbon electrode material is formed at a first temperature, and the second carbon electrode material is formed at a second temperature different from the first temperature.

### Claim 8 (depends on 1)

The method of claim 1, wherein the surface-treated first carbon electrode material and the second carbon electrode material have different impurity concentrations.

### Claim 9 (depends on 1)

The method of claim 1, wherein forming the first carbon electrode material, surface-treating the first carbon electrode material, and forming of second carbon electrode material are performed in-situ.

### Claim 10

A method for manufacturing an electronic device including a semiconductor memory, the method comprising:
forming a first carbon electrode material under first process conditions; and
forming a second carbon electrode material on a surface of the first carbon electrode material under second process conditions different from the first process conditions, wherein a thickness of the second carbon electrode material is less than a thickness of the first carbon electrode material.

### Claim 11 (depends on 10)

The method of claim 10, wherein the first carbon electrode material is formed at a first temperature, and the second carbon electrode material is formed at a second temperature different from the first temperature.

### Claim 12 (depends on 10)

The method of claim 10, wherein the first carbon electrode material includes an impurity of a first concentration, and the second carbon electrode material includes an impurity of a second concentration different from the first concentration.

### Claim 13 (depends on 10)

The method of claim 10, wherein the second carbon electrode material has a thickness of 100 Å or less.

### Claim 14 (depends on 10)

The method of claim 10, wherein the second carbon electrode material has a surface roughness of 30 Å or less.

### Claim 15 (depends on 10)

The method of claim 10, wherein the first carbon electrode material and the second carbon electrode material have different resistances.

### Claim 16 (depends on 10)

The method of claim 10, further comprising surface-treating the first carbon electrode material before the second carbon electrode material is formed.