# US 2021/0280764 A1 · Fabrication of a flux bias line local heating device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0280764 A1 - Document ID: US20210280764A1 - Status: Published application - Kind: A1 - Application number: 16/808,974 - Filed: 2020-03-04 - Published: 2021-09-09 - Earliest claimed: 2020-03-04 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Rasit Onur Topaloglu; Vivekananda P. Adiga; Martin O. Sandberg - Web page: https://patentgrep.com/patent/US20210280764A1 ## CPC - H10N 60/01: Manufacture or treatment - G06N 10/40: Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control - H05B 3/06: Heater elements structurally combined with coupling elements or holders - H10N 60/80: Constructional details - H10N 69/00: Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00 - H05B 2203/014: Heaters using resistive wires or cables not provided for in H05B3/54 - H10N 60/805: {for Josephson-effect devices} - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - G06N: COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL ## Abstract Devices, systems, and/or methods that can facilitate local heating of a superconducting flux biasing loop are provided. According to an embodiment, a method can comprise forming on a substrate a biasing loop and a flux controlled qubit device of a superconducting flux bias circuit. The method can further comprise forming a heating device on the substrate to couple the heating device to the biasing loop. ## Claims ### Claim 1 A method, comprising: forming on a substrate a biasing loop and a flux controlled qubit device of a superconducting flux bias circuit; and forming a heating device on the substrate to couple the heating device to the biasing loop. ### Claim 2 (depends on 1) The method of claim 1, further comprising: forming on the substrate the biasing loop comprising a persistent flux bias loop; and forming on the substrate the flux controlled qubit device comprising at least one of a qubit or a superconducting quantum interference device loop. ### Claim 3 (depends on 1) The method of claim 1, further comprising: forming on the substrate the heating device comprising a resistor; and thermally coupling the heating device to the biasing loop. ### Claim 4 (depends on 1) The method of claim 1, further comprising: forming on the substrate the heating device comprising superconducting heater bias wires coupled to a resistive material. ### Claim 5 (depends on 1) The method of claim 1, further comprising: forming on the substrate the heating device comprising superconducting heater bias wires having a first critical temperature that is higher than a second critical temperature of the biasing loop. ### Claim 6 (depends on 1) The method of claim 1, further comprising: thermally coupling the heating device to the biasing loop to heat at least one segment of the biasing loop above a critical temperature of the biasing loop. ### Claim 7 (depends on 1) The method of claim 1, further comprising: thermally coupling the heating device to the biasing loop to control superconductivity of the biasing loop and a magnetic field of the biasing loop, thereby facilitating at least one of improved fidelity of the flux controlled qubit device, improved fidelity of a quantum device comprising the flux controlled qubit device, or improved performance of the quantum device comprising the flux controlled qubit device. ### Claim 8 A method, comprising: forming on a substrate a superconducting flux bias circuit comprising a flux controlled qubit device and a biasing loop comprising a first critical temperature material and a second critical temperature material; and forming a heating device on the substrate to couple the heating device to the biasing loop. ### Claim 9 (depends on 8) The method of claim 8, wherein the first critical temperature material comprises a first superconducting material having a first critical temperature and the second critical temperature material comprises a second superconducting material having a second critical temperature that is lower than the first critical temperature. ### Claim 10 (depends on 8) The method of claim 8, further comprising: forming on the substrate the biasing loop comprising a persistent flux bias loop; and forming on the substrate the flux controlled qubit device comprising at least one of a qubit or a superconducting quantum interference device loop. ### Claim 11 (depends on 8) The method of claim 8, further comprising: forming on the substrate the heating device comprising a resistor; and thermally coupling the heating device to the biasing loop. ### Claim 12 (depends on 8) The method of claim 8, further comprising: forming on the substrate the heating device comprising superconducting heater bias wires coupled to a resistive material. ### Claim 13 (depends on 8) The method of claim 8, further comprising: forming on the substrate the heating device comprising superconducting heater bias wires having a critical temperature that is higher than at least one of a first critical temperature of the first critical temperature material or a second critical temperature of the second critical temperature material. ### Claim 14 (depends on 8) The method of claim 8, further comprising: thermally coupling the heating device to the biasing loop to heat the second critical temperature material above a critical temperature of the second critical temperature material. ### Claim 15 A method, comprising: forming on a substrate biasing loops and flux controlled qubit devices of superconducting flux bias circuits; and forming on the substrate one or more heating devices coupled to one or more control circuit wires formed on the substrate to couple the one or more heating devices to one or more of the biasing loops. ### Claim 16 (depends on 15) The method of claim 15, further comprising: forming on the substrate the one or more heating devices coupled to the one or more control circuit wires formed on the substrate to couple the one or more heating devices to one or more tunable resistors of a control circuit. ### Claim 17 (depends on 15) The method of claim 15, further comprising: forming on the substrate the one or more heating devices coupled to the one or more control circuit wires formed on the substrate to couple the one or more heating devices to one or more switches of a control circuit. ### Claim 18 (depends on 15) The method of claim 15, further comprising: forming on the substrate the biasing loops comprising persistent flux bias loops; and forming on the substrate the flux controlled qubit devices comprising at least one of qubits or superconducting quantum interference device loops. ### Claim 19 (depends on 15) The method of claim 15, further comprising: thermally coupling at least one of the one or more heating devices to at least one biasing loop of the biasing loops to heat one or more segments of the at least one biasing loop above a critical temperature of the at least one biasing loop. ### Claim 20 (depends on 15) The method of claim 15, further comprising: thermally coupling at least one of the one or more heating devices to at least one biasing loop of the biasing loops to control superconductivity and magnetic fields of the at least one biasing loop, thereby facilitating at least one of improved fidelity of at least one flux controlled qubit device of the flux controlled qubit devices, improved fidelity of a quantum device comprising the at least one flux controlled qubit device, or improved performance of the quantum device comprising the at least one flux controlled qubit device.