# US 2021/0280759 A1 · Thermoelectric material

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- Number: US 2021/0280759 A1
- Document ID: US20210280759A1
- Status: Published application
- Kind: A1
- Application number: 16/336,547
- Filed: 2017-10-05
- Published: 2021-09-09
- Earliest claimed: 2016-10-06
- Assignees: Mitsuba Corporation; National Institute for Materials Science
- Applicants: Mitsuba Corporation; National Institute for Materials Science
- Inventors: Satoki Tada; Yukihiro Isoda
- Web page: https://patentgrep.com/patent/US20210280759A1

## CPC

- C22C 13/00: Alloys based on tin
- H10N 10/853: comprising arsenic, antimony or bismuth (H10N10/852 takes precedence)
- C01B 33/06: Metal silicides (alloys C22)
- C22C 23/00: Alloys based on magnesium
- H10N 10/01: Manufacture or treatment
- H10N 10/851: comprising inorganic compositions
- H10N 10/8556: {comprising compounds containing germanium or silicon}
- C22C 1/02: by melting {(C22C1/1036 takes precedence)}
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}

## Abstract

The present invention provides a thermoelectric material excellent in heat resistance with less degradation of thermoelectric characteristics even in a high temperature environment. The thermoelectric material comprises a compound represented by a chemical formula Mg2Si1−xSnx(0<x<1) wherein at least one of the Si site and the Sn site of the compound is replaced with at least one of Sb and Bi, and an added Fe.

## Claims

### Claim 1

A thermoelectric material, which comprises:
a compound represented by a chemical formula Mg2Si1−xSnx(0<x<1) wherein at least one of the Si site and the Sn site of the compound is replaced with at least one of Sb and Bi, and
an added Fe.

### Claim 2 (depends on 1)

The thermoelectric material according to claim 1, wherein an additive amount of the Fe is not more than an amount that causes no phase transition of the compound.

### Claim 3 (depends on 1)

The thermoelectric material according to claim 1, wherein an additive amount of the Fe is 5000 ppm or more and 50000 ppm or less.

### Claim 4 (depends on 1)

The thermoelectric material according to claim 1, wherein an additive amount of substitution elements replacing at least one of the Si site and the Sn site is 1000 ppm or more and 30000 ppm or less.

### Claim 5 (depends on 4)

The thermoelectric material according to claim 4, wherein the substitution element replacing at least one of the Si site and the Sn site is Sb, and the additive amount of Sb is 5000 ppm or more.

### Claim 6 (depends on 4)

The thermoelectric material according to claim 4, wherein the substitution element replacing at least one of the Si site and the Sn site is Bi, and the additive amount of Bi is 1000 ppm or more and 15000 ppm or less.

### Claim 7 (depends on 1)

The thermoelectric material according to claim 1, wherein the range of x in the chemical formula is 0.25≤x<0.75.