# US 2021/0280756 A1 · Radiation-Emitting Semiconductor Chip, Method for Producing a Plurality of Radiation-Emitting Semiconductor Chips, Radiation-Emitting Component and Method for Producing a Radiation-Emitting > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0280756 A1 - Document ID: US20210280756A1 - Status: Published application - Kind: A1 - Application number: 16/316,987 - Filed: 2017-07-25 - Published: 2021-09-09 - Earliest claimed: 2016-07-28 - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Ivar Tangring; Korbinian Perzlmaier - Web page: https://patentgrep.com/patent/US20210280756A1 ## CPC - H10H 20/856: Reflecting means - H10H 20/01: Manufacture or treatment - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/854: characterised by their material, e.g. epoxy or silicone resins - H10H 20/034: {of coatings} - H10H 20/0361: {of wavelength conversion means} - H10H 20/0362: {of encapsulations} - H10H 20/0363: {of optical field-shaping means} - H10H 20/8513: {having two or more wavelength conversion materials} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A radiation-emitting semiconductor chip, a method for producing a plurality of radiation-emitting semiconductor chips, a radiation-emitting component and a method for producing a radiation-emitting component are disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor layer sequence having an active layer configured to generate electromagnetic radiation, a substrate on which the semiconductor layer sequence is arranged and which is transparent to the electromagnetic radiation, a reflective layer disposed on a main surface of the substrate facing away from the semiconductor layer sequence, the reflective layer including a resin in which reflective particles are embedded and a transparent resin layer located between the main surface of the substrate and the reflective layer. ## Claims ### Claim at position 1 1-19. (canceled) ### Claim 20 A radiation-emitting semiconductor chip comprising: a semiconductor layer sequence having an active layer configured to generate electromagnetic radiation; a substrate on which the semiconductor layer sequence is arranged and which is transparent to the electromagnetic radiation; a reflective layer disposed on a main surface of the substrate facing away from the semiconductor layer sequence, the reflective layer comprising a resin in which reflective particles are embedded; and a transparent resin layer located between the main surface of the substrate and the reflective layer. ### Claim 21 (depends on 20) The radiation-emitting semiconductor chip according to claim 20, wherein side surfaces of the semiconductor chip are free of the reflective layer. ### Claim 22 (depends on 20) The radiation-emitting semiconductor chip according to claim 20, wherein the reflective particles in the reflective layer have a volume between 50 vol % and 75 vol % inclusive. ### Claim 23 (depends on 20) The radiation-emitting semiconductor chip according to claim 20, wherein the reflective particles have a refractive index of at least 2.2. ### Claim 24 (depends on 20) The radiation-emitting semiconductor chip according to claim 20, wherein the reflective particles comprise titanium oxide, and wherein the resin is silicone. ### Claim 25 (depends on 20) The radiation-emitting semiconductor chip according to claim 20, wherein the reflective layer has a thickness between 5 micrometers and 15 micrometers inclusive. ### Claim 26 (depends on 20) The radiation-emitting semiconductor chip according to claim 20, wherein the reflective layer has a thermal conductivity between 1 W/mK and 2 W/mK inclusive. ### Claim 27 (depends on 20) The radiation-emitting semiconductor chip according to claim 20, wherein the transparent resin layer has a thickness between 150 nanometers and 1 micrometer inclusive. ### Claim 28 (depends on 20) The radiation-emitting semiconductor chip according to claim 20, wherein the transparent resin layer is disposed in direct contact to the main surface of the substrate and the reflective layer is disposed in direct contact to the transparent resin layer. ### Claim 29 (depends on 20) The radiation-emitting semiconductor chip according to claim 20, further comprising a Bragg mirror disposed between the main surface of the substrate and the reflective layer or between the main surface of the substrate and the transparent resin layer. ### Claim 30 (depends on 20) A radiation-emitting component comprising: the radiation-emitting semiconductor chip according to claim 20. ### Claim 31 (depends on 30) The radiation-emitting component according to the claim 30, wherein the semiconductor chip is located in a recess of a component housing, and wherein the component housing comprising a potting compound. ### Claim 32 (depends on 20) A method for producing a radiation-emitting component, the method comprising: gluing the semiconductor chip according to claim 20 into a recess of a component housing; and encapsulating the semiconductor chip. ### Claim 33 (depends on 32) The method according claim 32, further comprising: introducing phosphor particles into a encapsulation material; and forming a conversion layer by sedimentation on a radiation exit surface of the semiconductor chip and on a bottom surface of the recess. ### Claim 34 A method for producing a plurality of radiation-emitting semiconductor chips, the method comprising: providing a substrate wafer having disposed thereon a semiconductor layer sequence having an active layer configured to generate electromagnetic radiation, wherein the substrate wafer is transparent to the electromagnetic radiation; introducing fracture nucleations in the substrate wafer along separation lines; applying a reflective layer to a main surface of the substrate wafer over its entire area; and mechanically breaking the substrate wafer along the separation lines to form a plurality of radiation-emitting semiconductor chips, wherein a transparent resin layer is disposed between the main surface of the substrate and the reflective layer. ### Claim 35 (depends on 34) The method according to claim 34, wherein the transparent resin layer is arranged over the entire surface on the main surface of the substrate wafer after the fracture nucleations is introduced and before the reflective layer is applied. ### Claim 36 (depends on 34) The method according to claim 34, wherein the reflective layer and/or the transparent resin layer are applied by spray coating. ### Claim 37 (depends on 34) The method according to claim 34, wherein a sharp edge of the reflective layer and/or the transparent resin layer is formed during breaking. ### Claim 38 (depends on 34) The method according to claim 34, wherein at least the reflective layer is scored, ablated or removed along the separation lines prior to breaking. ### Claim 39 (depends on 34) The method according claim 34, wherein the reflective layer is freely accessible from the outside. ### Claim 40 A radiation-emitting semiconductor chip comprising: a semiconductor layer sequence having an active layer configured to generating electromagnetic radiation; a substrate on which the semiconductor layer sequence is arranged and which is transparent to the electromagnetic radiation generated in the active layer; a reflective layer disposed on a main surface of the substrate facing away from the semiconductor layer sequence, the reflective layer being formed of a resin in which reflective particles are embedded; and a transparent resin layer located between the main surface of the substrate and the reflective layer, wherein the reflective layer is freely accessible from the outside, and wherein the reflective layer has a thickness between 5 micrometer and 15 micrometer, inclusive.