# US 2021/0280748 A1 · Electromagnetic Radiation Emitting Device and Method of Applying a Converter Layer to an Electromagnetic Radiation Emitting Device

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- Number: US 2021/0280748 A1
- Document ID: US20210280748A1
- Status: Published application
- Kind: A1
- Application number: 17/265,475
- Filed: 2019-08-02
- Published: 2021-09-09
- Earliest claimed: 2018-08-03
- Assignees: OSRAM OLED GmbH
- Applicants: OSRAM OLED GmbH
- Inventors: Sebastian Taeger; Siegfried Herrmann; Adrian Stefan Avramescu; Alexander Behres
- Web page: https://patentgrep.com/patent/US20210280748A1

## CPC

- H10H 20/8511: {characterised by their material, e.g. binder}
- H10H 20/01: Manufacture or treatment
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10H 20/034: {of coatings}
- H10H 20/0361: {of wavelength conversion means}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

An electromagnetic radiation emitting device and a method for applying a converter layer to an electromagnetic radiation emitting device are disclosed. In an embodiment, a method includes applying converter elements to a surface of a carrier, applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device and forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.

## Claims

### Claim at position 1

-17. (canceled)

### Claim 18

A method comprising:
applying converter elements to a surface of a carrier;
applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device; and
forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.

### Claim 19 (depends on 18)

The method of claim 18, wherein the carrier has openings through which reactants are fed to the converter elements during the atomic layer deposition process.

### Claim 20 (depends on 18)

The method according to claim 18, wherein, during the atomic layer deposition process, different reactants are alternately and separately fed to the converter elements.

### Claim 21 (depends on 18)

The method according to claim 18, further comprising removing the carrier from the converter layer after the converter layer is formed.

### Claim 22 (depends on 18)

The method according to claim 18, wherein applying the carrier to the electromagnetic radiation emitting device comprises generating a negative pressure in a space between the carrier and the electromagnetic radiation emitting device.

### Claim 23 (depends on 18)

The method according to claim 18, wherein the carrier is flexible and is applied to a non-planar surface of the electromagnetic radiation emitting device.

### Claim 24 (depends on 18)

The method according to claim 18, further comprising:
applying reflector and/or absorber elements to the electromagnetic radiation emitting device; and
forming a reflector and/or an absorber layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the reflector and/or absorber elements by an atomic layer deposition process.

### Claim 25 (depends on 18)

The method according to claim 18, further comprising applying at least one further layer to the electromagnetic radiation emitting deice, wherein the converter layer and the at least one further layer have different refractive indices.

### Claim 26 (depends on 18)

The method according to claim 18, further comprising applying at least two further layers to the electromagnetic radiation emitting device, wherein refractive indices of the converter layer and of the at least two further layers decrease or increase along a radiation direction of the electromagnetic radiation emitting device.

### Claim 27 (depends on 18)

The method according to claim 18, wherein the converter elements are ceramic particles, nanorods, microrods, quantum dots, and/or epitaxially grown structures.

### Claim 28 (depends on 18)

The method according to claim 18, wherein the plurality of thin layers are formed of a material which is substantially transparent to at least a portion of the electromagnetic radiation emitted by the electromagnetic radiation emitting device.

### Claim 29 (depends on 18)

The method according to claim 18,
wherein the electromagnetic radiation emitting device comprises a encapsulating material,
wherein converter, reflector and/or absorber elements are applied to the encapsulating material, and
wherein the converter layer, a reflector layer and/or an absorber layer are formed on the encapsulating material by depositing a plurality of thin layers on the converter, reflector and/or absorber elements by an atomic layer deposition process.

### Claim 30

An electromagnetic radiation emitting device comprising:
a semiconductor chip configured to emit electromagnetic radiation;
at least one converter layer located on the semiconductor chip,
wherein the at least one converter layer has a plurality of thin layers in which converter elements are embedded, and
wherein each of the plurality of thin layers has a thickness of at most 100 nm; and
at least one further layer arranged on the converter layer,
wherein the converter layer and the at least one further layer have different refractive indices.

### Claim 31 (depends on 30)

The electromagnetic radiation emitting device according to claim 30,
wherein at least two further layers are located on the converter layer,
wherein refractive indices of the converter layer and the at least two further layers decrease or increase along a radiation direction of the semiconductor chip.

### Claim 32 (depends on 30)

The electromagnetic radiation emitting device according to claim 30,
wherein the semiconductor chip is at least partially surrounded by a encapsulating material,
wherein the at least one converter layer, a reflector layer and/or an absorber layer is applied to the encapsulating material,
wherein the at least one converter layer, the reflector layer and/or the absorber layer has a plurality of thin layers in which converter, reflector and/or absorber elements are embedded, and
wherein each of the plurality of thin layers has a thickness of at most 100 nm.
