# US 2021/0280745 A1 · Light-emitting element and manufacturing method thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2021/0280745 A1
- Document ID: US20210280745A1
- Status: Published application
- Kind: A1
- Application number: 17/328,732
- Filed: 2021-05-24
- Published: 2021-09-09
- Earliest claimed: 2018-01-19
- Assignees: Epistar Corporation
- Applicants: Epistar Corporation
- Inventors: Yi-Lun CHOU; Chih-Hao CHEN
- Web page: https://patentgrep.com/patent/US20210280745A1

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- H10F 71/137: {Batch treatment of the devices}
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/821: of the light-emitting regions, e.g. non-planar junctions
- H10H 20/83: Electrodes
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10H 20/832: characterised by their material
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing a light-emitting element includes: providing a substrate, wherein the substrate includes a top surface with a first area and a second area; introducing a semiconductor material to form a first layer on the first area and a second layer on the second area, wherein the first layer includes a first crystal quality and the second layer includes a second crystal quality, the first crystal quality is different from the second crystal quality; and dicing the substrate along the second area.

## Claims

### Claim 1

A method of manufacturing a light-emitting element, comprising:
providing a substrate, wherein the substrate comprises a top surface with a first area and a second area;
introducing a semiconductor material to form a first layer on the first area and a second layer on the second area, wherein the first layer comprises a first crystal quality and the second layer comprises a second crystal quality, the first crystal quality is different from the second crystal quality; and
dicing the substrate along the second area.

### Claim 2 (depends on 1)

The method of claim 1, further comprising forming a patterned mask layer on the second area.

### Claim 3 (depends on 2)

The method of claim 2, wherein the patterned mask layer has a width of 10 μm to 100 μm.

### Claim 4 (depends on 2)

The method of claim 2, wherein the patterned mask layer has a height of 1 μm to 3 μm.

### Claim 5 (depends on 2)

The method of claim 2, wherein the second layer is formed on the patterned mask layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein the second layer comprises a first non-single crystal semiconductor layer.

### Claim 7 (depends on 6)

The method of claim 6, further comprising forming a non-single crystal semiconductor stack on the first non-single crystal semiconductor layer.

### Claim 8 (depends on 7)

The method of claim 7, further comprising removing the non-single crystal semiconductor stack before dicing the substrate.

### Claim 9 (depends on 7)

The method of claim 7, further comprising:
forming a patterned mask layer on the second area;
forming the first non-single crystal semiconductor layer and the non-single crystal semiconductor stack on the patterned mask layer; and
removing the patterned mask layer before dicing the substrate.

### Claim 10 (depends on 7)

The method of claim 7, wherein the first layer comprises a buffer structure on the first area.

### Claim 11 (depends on 10)

The method of claim 10, wherein the buffer structure comprises Alx2Ga(1-x2)N, and wherein X2≥0.8.

### Claim 12 (depends on 10)

The method of claim 10, further comprising forming a first semiconductor layer, a light-emitting stack and a second semiconductor layer on the buffer structure.

### Claim 13 (depends on 12)

The method of claim 12, further comprising:
removing portions of the second semiconductor layer and the light-emitting stack to form a platform exposing a portion of the first semiconductor layer;
forming a first contact layer on the platform to electrically connect to the first semiconductor layer; and
forming a second contact layer on the second semiconductor layer.

### Claim 14 (depends on 12)

The method of claim 12, wherein the first semiconductor layer comprises Alx1Ga(1-x1)N, wherein X1≥10.6.

### Claim 15 (depends on 12)

The method of claim 12, wherein the first semiconductor layer comprises Alx1Ga(1-x1)N and the buffer structure comprises Alx2Ga(1-x2)N, and wherein X2>X1.

### Claim 16 (depends on 12)

The method of claim 12, wherein the first semiconductor layer comprises a first region and a second region surrounding the first region and closer to the second area than the first region; and wherein the first region comprises a first thickness, and the second region comprises a second thickness larger than the first thickness.

### Claim 17 (depends on 1)

The method of claim 1, wherein the second area is a dicing street, and the step of dicing the substrate comprises dicing the substrate along the dicing street.

### Claim 18 (depends on 1)

The method of claim 1, wherein in a top view, the second area surrounds the first area.

### Claim 19 (depends on 1)

The method of claim 1, wherein the first crystal quality is better than the second crystal quality.

### Claim 20 (depends on 12)

The method of claim 12, wherein one of the first semiconductor layer and the second semiconductor layer comprises a single crystal structure.