# US 2021/0280744 A1 · Semiconductor device package and method of manufacturing the same

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- Number: US 2021/0280744 A1
- Document ID: US20210280744A1
- Status: Published application
- Kind: A1
- Application number: 16/809,500
- Filed: 2020-03-04
- Published: 2021-09-09
- Earliest claimed: 2020-03-04
- Assignees: Advanced Semiconductor Engineering, Inc.
- Applicants: Advanced Semiconductor Engineering, Inc.
- Inventors: Tang-Yuan CHEN; Meng-Wei HSIEH; Cheng-Yuan KUNG
- Web page: https://patentgrep.com/patent/US20210280744A1

## CPC

- H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10P 72/74: {using temporarily an auxiliary support}
- H01Q 1/2283: {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package}
- H10H 29/011: {of integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00}
- H10H 29/0364: {of interconnections}
- H10H 20/822: Materials of the light-emitting regions
- H10P 72/7424: {used as a support during the manufacture of self-supporting substrates}
- H10P 72/743: {used as a support during manufacture of interconnect decals or build up layers}
- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device package includes a carrier, an emitting element and a first package body. The carrier includes a first surface and a second surface opposite to the first surface. The emitting element is disposed on the first surface of the carrier. The first package body is disposed over the first surface of the carrier and spaced apart from the first surface of the carrier.

## Claims

### Claim 1

A semiconductor device package, comprising:
a carrier having a first surface and a second surface opposite to the first surface;
an emitting element disposed on the first surface of the carrier; and
a first package body disposed over the first surface of the carrier and spaced apart from the first surface of the carrier.

### Claim 2 (depends on 1)

The semiconductor device package of claim 1, further comprising a first dielectric layer disposed between the first package body and the first surface of the carrier.

### Claim 3 (depends on 2)

The semiconductor device package of claim 2, further comprising a second dielectric layer covering the emitting element and separating the first package body from the first dielectric layer.

### Claim 4 (depends on 2)

The semiconductor device package of claim 2, wherein the first dielectric layer covering the emitting element and separating the first package body from the carrier.

### Claim 5 (depends on 1)

The semiconductor device package of claim 1, further comprising:
a first building-up circuit disposed on the second surface of the carrier, the first building-up circuit comprising a conductive layer and a dielectric layer covering the conductive layer; and
a conductive pillar disposed on the first building-up circuit.

### Claim 6 (depends on 5)

The semiconductor device package of claim 5, further comprising:
a conductive pad disposed on the dielectric layer of the first building-up layer; and
a conductive via connecting the conductive pad with the conductive layer of the first building-up layer.

### Claim 7 (depends on 6)

The semiconductor device package of claim 6, wherein a lateral surface and a top surface of the conductive pad are covered by the conductive pillar.

### Claim 8 (depends on 5)

The semiconductor device package of claim 5, further comprising:
a second package body disposed on the first building-up layer and covering the conductive pillar;
a second building-up layer disposed on the second package body; and
an electronic component disposed on the second building-up layer and electrically connected to the second building-up layer.

### Claim 9 (depends on 1)

The semiconductor device package of claim 1, wherein the carrier includes a glass material.

### Claim 10

A semiconductor device package, comprising:
a carrier having a first surface and a second surface opposite to the first surface;
an emitting element disposed on the first surface of the carrier;
a first building-up layer disposed on the second surface of the carrier, the first building-up layer having a first conductive layer, a dielectric layer covering the conductive layer and a second conductive layer on the dielectric layer and electrically connected to the first conductive layer; and
an electrical element disposed on the second conductive layer.

### Claim 11 (depends on 10)

The semiconductor device package of claim 10, further comprising a seed layer disposed between the electrical element and the second conductive layer.

### Claim 12 (depends on 10)

The semiconductor device package of claim 10, wherein a lateral surface and a top surface of the second conductive layer are covered by the electrical element.

### Claim 13 (depends on 10)

The semiconductor device package of claim 10, further comprising:
a first package body disposed on the first building-up layer and covering the electrical element;
a second building-up layer disposed on the first package body; and
an electronic component disposed on the second building-up layer and electrically connected to the second building-up layer.

### Claim 14

A method of manufacturing a semiconductor device package, the method comprising:
(a) providing a circuit layer including a first carrier, a first building-up layer on the first carrier and a second carrier on the first building-up layer; and
(b) thinning the first carrier and the second carrier.

### Claim 15 (depends on 14)

The method of claim 14, in operation (a) further comprising attaching the second carrier to the first building-up layer by an adhesive layer.

### Claim 16 (depends on 15)

The method of claim 15, in operation (a) further comprising:
forming a conductive layer on the first carrier;
forming a dielectric layer on the conductive layer;
forming an opening penetrating the dielectric layer to expose a portion of the conductive layer; and
attaching the adhesive layer into the opening of the dielectric layer.

### Claim 17 (depends on 15)

The method of claim 15, in operation (a) further comprising:
forming a conductive layer on the first carrier;
forming a dielectric layer on the conductive layer;
forming an opening penetrating the dielectric layer to expose a portion of the conductive layer;
forming a conductive pad on the opening and the dielectric layer; and
attaching the adhesive layer on the conductive pad and the dielectric layer.

### Claim 18 (depends on 14)

The method of claim 14, further comprising:
forming an emitting device on the second surface of the first carrier;
forming a first dielectric layer covering on second surface of the first carrier; and
forming a first package over the second surface of the first carrier and spaced apart from the second surface of the first carrier by the first dielectric layer.

### Claim 19 (depends on 18)

The method of claim 18, after the formation of the first package body, further comprising:
removing the second carrier to expose the first building-up layer; and
forming a conductive pillar to be electrically connected to the first building-up layer.

### Claim 20 (depends on 19)

The method of claim 19, further comprising:
forming a second package to cover the conductive pillar;
forming a second building-up layer to be electrically connected to the conductive pillar; and
connecting an electronic component to the second building-up layer.