OPTIMISED 650 nm SILICON AVALANCHE LED

Abstract

The invention provides a silicon pn based device with different dopant and impurity implanted concentrations strategically placed in the device, the pn junction being reverse biased, such that the 650 nm optical emission is stimulated and enhanced. The invention extends to a silicon avalanche light emitting device comprising a first junction and a second junction, said first junction including a reverse biased excitation zone for injecting high energy carriers in a first direction and said second junction being forward biased so as to inject high density low energy carriers opposite to said first direction, wherein an interaction zone is formed between said first junction and said second junction so as to enhance emission of 650 nm photons through interactions between said high energy carriers and said low energy carriers.

Dependencies are inferred from the claim text.