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US 2021/0280730 A1Published application
Perovskite-silicon tandem structure and photon upconverters
AssigneeKing Fahd University of Petroleum and Minerals
InventorFiroz KHAN
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Abstract
A perovskite-silicon tandem cell capable of absorbing solar radiation with energy lower than that of 1.12 eV, i.e., the bandgap of crystalline silicon—corresponding to the wavelength of 1100 nm. Ho3+ can absorb photons of wavelength range 1120 to 1190 nm, Tm3+, 1190 to 1260 nm, and Er3+, 1145 to 1580 nm, but up-conversion can be achieved using Ho3+, Tm3+, and Er3+-doped metal oxide, such as ZrO2, in perovskite-silicon tandem solar cells. Doped metal oxides, such as ZrO2 can also work as selective contacts. Such perovskite-silicon tandem structures can achieve over 30% solar energy conversion efficiency.
Claims20
1:
- A tandem photovoltaic cell, comprising, in an order as follows:
- an anti-reflection layer;
- a transparent conductive oxide layer;
- a hole transport layer;
- a perovskite layer;
- a p+-doped porous silicon electron transport layer;
- an n-type silicon layer;
- an n+-doped silicon layer as a homojunction with the n-type silicon layer;
- a hole blocking and/or silicon-passivating layer,
- a metal oxide layer doped with Ho3+, Tm3+, and/or Er3+ metal oxide;
- and
- a conductive electrode layer.
9 more elements
2:
- The cell of claim 1, wherein the metal oxide layer comprises at least 50 wt. % ZrO2, relative to total metal oxide layer weight.
3:
- The cell of claim 1, wherein the metal oxide layer comprises at least 0.00001 at. % Ho3+, relative to total metal oxide layer metal stoichiometry.
4:
- The cell of claim 1, wherein the metal oxide layer comprises at least 0.00001 at. % Er3+, relative to total metal oxide layer metal stoichiometry.
5:
- The cell of claim 1, wherein the metal oxide layer comprises at least 0.00001 at. % Tm3++, relative to total metal oxide layer metal stoichiometry.
6:
- The cell of claim 1, wherein the hole blocking and/or silicon-passivating layer comprises at least 50 wt. % SiOx and/or Al2O3, relative to total hole blocking and/or silicon-passivating layer weight.
7:
- The cell of claim 1, wherein the perovskite layer directly contacts the p+-doped porous silicon electron transport layer.
8:
- The cell of claim 1, wherein the p+-doped porous silicon electron transport layer directly contacts the n-type silicon layer.
9:
- The cell of claim 1, further comprising:
- a plurality of point contacts bridging the hole blocking and/or silicon-passivating layer and the metal oxide layer.
10:
- The cell of claim 1, further comprising:
- a plurality of selective contacts bridging the metal oxide layer and the conductive electrode layer.
11:
- The cell of claim 1, the perovskite layer directly contacts the p+-doped porous silicon electron transport layer, and
- wherein the p+-doped porous silicon electron transport layer directly contacts the n-type silicon layer.
12:
- The cell of claim 1, comprising no antireflective layer between a charge transporting layer, light absorbing layers, and/or silicon layer.
13:
- The cell of claim 1, wherein the perovskite layer comprises a compound of formula (I)
- RNH3PbX3 (I),
- wherein R is an alkyl group and X is a halide.
14:
- The cell of claim 13, wherein R is methyl or ethyl and X is Br or I.
15:
- The cell of claim 1, wherein the metal oxide layer directly contacts the conductive electrode layer.
16:
- The cell of claim 1, wherein, relative to total metal oxide layer weight, metal oxide layer comprises at least 75 wt. % ZrO2 and at least 0.00001 at. % Ho3+, Er3+, and/or Tm3+.
17:
- The cell of claim 1, wherein, relative to total metal oxide layer weight, metal oxide layer comprises at least 75 wt. % ZrO2 and at least 0.00001 at. % Ho3+, Er3+, and/or Tm3+,
- wherein the hole blocking and/or silicon-passivating layer directly contacts the metal oxide layer, and
- wherein the metal oxide layer directly contacts the conductive electrode layer.
18:
- A method of generating electric energy, the method comprising:
- irradiating the cell of claim 1 with sunlight.
19:
- A method of increasing the electrical conversion efficiency of a tandem perovskite-silicon photovoltaic cell, the method comprising:
- including a metal oxide layer doped with Ho3+, Tm3+, and/or Er3+ metal oxide in the cell between a back contact and a passivating layer, beneath a perovskite photoelectric conversion unit and a silicon photoelectric conversion unit in a direction of irradiation.
20:
- The method of 19, wherein, relative to total metal oxide layer weight, metal oxide layer comprises at least 75 wt. % ZrO2 and at least 0.00001 at. % Ho3+, Er3+, and/or Tm3+.