US 2021/0280701 A1 · Inverter Based on Electron Interference

Abstract

Semiconductor devices includes third arms. A channel from the first and second arms extends to a channel of the third arm. When a current from a first voltage is flowing from the first arm to the second arm, a flow of ballistic electrons is generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel. A fin structure located in the third arm channel and includes a gate. The gate is controlled using a second voltage over the fin structure, the fin structure is formed to induce an energy-field structure that shifts by an amount of the second voltage to control an opening of the gate that the flow of ballistic electrons pass through, which in turn changes a depletion width, subjecting the ballistic electrons to diffraction, and then interference.

Claims20

Dependent claims

A semiconductor device configured to operate as an inverter, comprising:

an epitaxial layer forming a channel, and includes a III-N heterostructure such as InAlN/GaN, wherein an amount of an In concentration of the InAlN/GaN is tuned to lattice match with GaN, resulting in electron mobility to generate ballistic electrons;
a fin structure located in the channel positioned at a conductance variation distance from an end of the channel, the fin structure includes
a gate formed transversely to a longitudinal axis of the channel, and the gate is controlled using a voltage over the fin structure, such that the fin structure is formed to induce an energy-field structure that is shifted by an amount of the voltage to control an opening of the gate that the flow of ballistic electrons is passing through, which in turn changes a depletion width, subjecting the ballistic electrons to interference,
wherein the semiconductor device is turned on by applying an amount of the voltage, and turned off by applying no amounts of the voltage.

1 more element

A semiconductor device including a structure having a first arm, a second arm and a third arm, such that a channel from the first and second arms extends to a channel of the third arm, and when a current from a first voltage is flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of ballistic electrons are generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel, comprising:

an fin structure located in the third arm channel is positioned at a conductance variation distance from an end of the third arm, the fin structure includes a gate formed transversely to a longitudinal axis of the fin structure, and the gate is controlled using a second voltage over the fin structure, such that the fin structure is formed to induce an energy-field structure that is shifted by an amount of the second voltage to control an opening of the gate that the flow of ballistic electrons is passing through, which in turn changes a depletion width, subjecting the ballistic electrons to interference,
wherein the semiconductor device is turned on by applying an amount of the first and the second voltage, and turned off by applying no amounts of the first and the second voltage.

A semiconductor device comprising:

a structure having a first arm, a second arm and a third arm, such that a channel from the first and second arms extends to a channel of the third arm, and when a current from a first voltage is flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of ballistic electrons are generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel;
fin structures located in the third arm channel are positioned at a conductance variation distance range from an end of the third arm, and arranged in series, each fin structure include:
a gate formed transversely to a longitudinal axis of the fin structure, and the gate is controlled using a second voltage over the fin structure, such that the fin structure is formed to induce an energy-field structure that is shifted by an amount of the second voltage to control an opening of the gate that the flow of ballistic electrons is passing through, which in turn changes a depletion width, subjecting the ballistic electrons to diffraction, and then interference.

Dependencies are inferred from the claim text.

Inverter Based on Electron Interference

Life of this patent

Inverter Based on Electron Interference

Life of this patent

Abstract

Claims20