# US 2021/0280669 A1 · Semiconductor structure and formation method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0280669 A1 - Document ID: US20210280669A1 - Status: Published application - Kind: A1 - Application number: 17/249,487 - Filed: 2021-03-03 - Published: 2021-09-09 - Earliest claimed: 2020-03-05 - Assignees: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation - Applicants: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation - Inventors: Fei ZHOU - Web page: https://patentgrep.com/patent/US20210280669A1 ## CPC - H10D 1/711: {having non-planar surfaces, e.g. formed by texturisation} - H10D 1/714: {having horizontal extensions} - H10W 20/423: {Shielding layers} - H10W 20/427: {Power or ground buses} - H10W 20/496: {Capacitor integral with wiring layers} - H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor structure and a fabrication method of the semiconductor structure are provided in the present disclosure. The semiconductor structure includes a substrate, where the substrate includes a shielding region having a first area; a first shielding layer on the substrate, where a first shielding structure is in the first shielding layer of the shielding region, and the first shielding structure has a first density; a second shielding layer on the first shielding layer, where a second shielding structure is in the second shielding layer of the shielding region, and the second shielding structure has a second density which is less than the first density; and an electrical interconnection structure, electrically interconnecting the first shielding structure with the second shielding structure and enabling the first shielding structure grounded. ## Claims ### Claim 1 A semiconductor structure, comprising: a substrate, wherein the substrate includes a shielding region having a first area; a first shielding layer on the substrate, wherein a first shielding structure is in the first shielding layer of the shielding region; a projection of the first shielding structure has a first projection on a surface of the substrate; and the first shielding structure has a first density, the first density being a ratio of an area of the first projection over the first area; a second shielding layer on the first shielding layer, wherein a second shielding structure is in the second shielding layer of the shielding region; a projection of the second shielding structure has a second projection on the surface of the substrate; the second shielding structure has a second density which is less than the first density, the second density being a ratio of an area of the second projection over the first area; and an electrical interconnection structure, electrically interconnecting the first shielding structure with the second shielding structure and enabling the first shielding structure grounded. ### Claim 2 (depends on 1) The structure according to claim 1, wherein: the second projection is within a range of the first projection. ### Claim 3 (depends on 1) The structure according to claim 1, wherein the first shielding structure includes: a plurality of first strip structures which extends along a first direction and is in parallel with each other and, and a plurality of second strip structures which extends along a second direction and is connected to the plurality of first strip structures, wherein the first direction and the second direction are perpendicular to each other. ### Claim 4 (depends on 3) The structure according to claim 3, wherein: a distance between adjacent first strip structures ranges from about 21 nanometers to about 120 nanometers; and a distance between adjacent second strip structures ranges from about 21 nanometers to about 120 nanometers. ### Claim 5 (depends on 1) The structure according to claim 1, wherein the second shielding structure includes: a plurality of third strip structures extending along one or both of a first direction and a second direction, wherein the first direction and the second direction are perpendicular to each other. ### Claim 6 (depends on 5) The structure according to claim 5, wherein: a distance between adjacent third strip structures which are in parallel with each other ranges from about 42 nanometers to about 240 nanometers. ### Claim 7 (depends on 1) The structure according to claim 1, wherein: the first shielding structure is made of a material including a metal material. ### Claim 8 (depends on 1) The structure according to claim 1, wherein: the second shielding structure is made of a material including a metal material. ### Claim 9 (depends on 1) The structure according to claim 1, wherein the electrical interconnection structure further includes: a plurality of conductive plugs between the first shielding structure and the second shielding structure, wherein one end of a conductive plug of the plurality of conductive plugs is electrically interconnected with the first shielding structure, and another end of the conductive plug of the plurality of conductive plugs is electrically interconnected with the second shielding structure. ### Claim 10 (depends on 1) The structure according to claim 1, wherein: the electrical interconnection structure includes a grounded metal structure surrounding the first shielding structure, wherein the grounded metal structure is electrically interconnected with the first shielding structure. ### Claim 11 (depends on 1) The structure according to claim 1, further including: a device layer on the second shielding layer, wherein the device layer in the shielding region contains a device structure. ### Claim 12 (depends on 11) The structure according to claim 11, wherein: the device structure includes a capacitor structure. ### Claim 13 (depends on 12) The structure according to claim 12, wherein: the capacitor structure includes a metal device layer and a dielectric layer; the metal device layer includes a first metal structure and a second metal structure which are adjacent to each other; and the dielectric layer is between the first metal structure and the second metal structure. ### Claim 14 (depends on 13) The structure according to claim 13, wherein: the metal device layer has a third projection on the surface of the substrate; and along a direction perpendicular to the surface of the substrate, an overlapped area of the third projection and the first projection is greater than an overlapped area of the third projection and the second projection. ### Claim 15 (depends on 14) The structure according to claim 14, wherein: the third projection is within a range of the first projection. ### Claim 16 (depends on 14) The structure according to claim 14, wherein: a distance between a contour of the third projection and a contour of the first projection ranges from about 0.2 μm to about 2 μm. ### Claim 17 (depends on 1) The structure according to claim 1, wherein: a first dielectric layer, surrounding the first shielding structure, is in the first shielding layer; and a second dielectric layer, surrounding the second shielding structure, is in the second shielding layer. ### Claim 18 (depends on 9) The structure according to claim 9, wherein: the conductive plug is made of a metal material including tungsten, aluminum, copper, or a combination thereof. ### Claim 19 (depends on 13) The structure according to claim 13, wherein: the first metal structure is used as a first electrode of the capacitor structure, and the second metal structure is used as a second electrode of the capacitor structure. ### Claim 20 A method for fabricating a semiconductor structure, comprising: providing a substrate, wherein the substrate includes a shielding region having a first area; forming a first shielding layer on the substrate, wherein a first shielding structure is in the first shielding layer of the shielding region; a projection of the first shielding structure has a first projection on a surface of the substrate; and the first shielding structure has a first density, the first density being a ratio of an area of the first projection over the first area; forming a second shielding layer on the first shielding layer, wherein a second shielding structure is in the second shielding layer of the shielding region; a projection of the second shielding structure has a second projection on the surface of the substrate; the second shielding structure has a second density which is less than the first density, the second density being a ratio of an area of the second projection over the first area; and forming an electrical interconnection structure, electrically interconnecting the first shielding structure with the second shielding structure and enabling the first shielding structure grounded.