# US 2021/0280600 A1 · Semiconductor storage device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0280600 A1 - Document ID: US20210280600A1 - Status: Published application - Kind: A1 - Application number: 17/010,454 - Filed: 2020-09-02 - Published: 2021-09-09 - Earliest claimed: 2020-03-09 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Tadashi IGUCHI - Web page: https://patentgrep.com/patent/US20210280600A1 ## CPC - H10B 41/10: characterised by the top-view layout - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/50: characterised by the boundary region between the core region and the peripheral circuit region - H10B 43/10: characterised by the top-view layout - H10B 43/50: characterised by the boundary region between the core and peripheral circuit regions - H10W 20/42: Vias, e.g. via plugs - H10B: ELECTRONIC MEMORY DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor storage device includes: a substrate having a front surface; a plurality of conductive layers arranged in a first direction, the first direction intersecting the front surface of the substrate; a plurality of memory cells connected to the plurality of conductive layers; a contact electrode extending in the first direction and connected to one of the plurality of conductive layers; and an insulating structure extending in the first direction, the insulating structure connected to an end portion of the contact electrode on one side of the contact electrode in the first direction, and penetrating the plurality of conductive layers. ## Claims ### Claim 1 A semiconductor storage device, comprising: a substrate having a surface; a plurality of conductive layers arranged in a first direction, the first direction intersecting the surface of the substrate; a plurality of memory cells connected to the plurality of conductive layers; a contact electrode extending in the first direction and connected to one of the plurality of conductive layers; and an insulator extending in the first direction, the insulator connected to an end portion of the contact electrode on one side of the contact electrode in the first direction, and the insulator connected to the plurality of conductive layers. ### Claim 2 (depends on 1) The semiconductor storage device according to claim 1, further comprising: a plurality of interlayer insulating films disposed between the plurality of conductive layers arranged in the first direction, wherein the plurality of conductive layers include a second conductive layer and a third conductive layer adjacent to each other in the first direction, the plurality of interlayer insulating films include a first interlayer insulating film disposed between the second conductive layer and the third conductive layer, the insulating structure includes a first insulating layer, the first insulating layer extending in the first direction and connected to the plurality of conductive layers and the plurality of interlayer insulating films, and wherein the first insulating layer includes: a first portion disposed at a location corresponding to the second conductive layer in the first direction, the first portion connected to the second conductive layer; a second portion disposed at a location corresponding to the third conductive layer in the first direction, the second portion connected to the third conductive layer; and a third portion disposed at a location corresponding to the first interlayer insulating film in the first direction, the third portion connected to the first interlayer insulating film. ### Claim 3 (depends on 2) The semiconductor storage device according to claim 2, wherein an outer diameter of the third portion is larger than outer diameters of the first and second portions. ### Claim 4 (depends on 2) The semiconductor storage device according to claim 2, wherein the insulating structure includes a second insulating layer extending in the first direction, the second insulating layer connected to the end portion of the contact electrode in the first direction, and the first insulating layer is disposed between the second insulating layer and the plurality of conductive layers. ### Claim 5 (depends on 4) The semiconductor storage device according to claim 4, wherein the insulating structure includes a third insulating layer connected to the contact electrode, the first insulating layer, and the second insulating layer. ### Claim 6 (depends on 2) The semiconductor storage device according to claim 2, further comprising a through via hole extending in the first direction and penetrating the plurality of conductive layers and the plurality of insulating layers. ### Claim 7 (depends on 6) The semiconductor storage device according to claim 6, wherein an inner diameter of a first portion of the through via hole disposed in the conductive layers is smaller than an inner diameter of a second portion of the through via hole disposed in the insulating layers. ### Claim 8 (depends on 6) The semiconductor storage device according to claim 6, wherein the shape of the first insulating layer is approximately cylindrical. ### Claim 9 (depends on 6) The semiconductor storage device according to claim 6, wherein the first insulating layer includes silicon dioxide. ### Claim 10 (depends on 4) The semiconductor storage device according to claim 4, wherein the second insulating layer includes silicon nitride and the first insulating layer includes silicon dioxide. ### Claim 11 (depends on 5) The semiconductor storage device according to claim 5, further comprising a through via hole extending in the first direction and penetrating the plurality of conductive layers and the plurality of insulating layers. ### Claim 12 (depends on 11) The semiconductor storage device according to claim 11, wherein the first insulating layer is formed on an inner peripheral surface of the through via hole. ### Claim 13 (depends on 12) The semiconductor storage device according to claim 12, wherein the second insulating layer is formed on an inner peripheral surface of the first insulating layer. ### Claim 14 (depends on 13) The semiconductor storage device according to claim 13, wherein the third insulating layer is formed on an upper surface of the first insulating layer. ### Claim 15 (depends on 11) The semiconductor storage device according to claim 11, wherein an outer peripheral surface of the third insulating layer is connected to an inner peripheral surface of the through via hole.