# US 2021/0280552 A1 · Semiconductor package structure with heat sink and method preparing the same

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- Number: US 2021/0280552 A1
- Document ID: US20210280552A1
- Status: Published application
- Kind: A1
- Application number: 17/195,389
- Filed: 2021-03-08
- Published: 2021-09-09
- Earliest claimed: 2020-03-06
- Assignees: SJ Semiconductor(Jiangyin) Corporation
- Applicants: SJ Semiconductor (Jiangyin) Corporation
- Inventors: Hanlung TSAI; Chengchung LIN; Mingchih CHEN
- Web page: https://patentgrep.com/patent/US20210280552A1

## CPC

- H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation}
- H10W 40/228: {the projecting parts being wire-shaped or pin-shaped}
- H10W 40/778: {in encapsulations}
- H10W 72/0112: {Apparatus for manufacturing bump connectors}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 74/01: Manufacture or treatment
- H10W 40/258: {Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)}
- H10W 72/01225: {in solid form, e.g. by using a powder or by stud bumping}
- H10W 72/01515: {Forming coatings}
- H10W 72/01551: {Changing the shapes of bond wires}
- H10W 72/07141: {Means for applying energy, e.g. ovens or lasers}
- H10W 72/07168: {Means for storing or moving the material for the connector}
- H10W 72/075: {of bond wires}
- H10W 72/07552: {changes in structures or sizes}
- H10W 72/07553: {changes in shapes}
- H10W 72/07554: {changes in dispositions}
- H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core}
- H10W 72/234: {Cross-sectional shape, i.e. in side view}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/527: {Multiple bond wires having different sizes}
- H10W 72/531: {Shapes of wire connectors}
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10W 72/537: {Multiple bond wires having different shapes}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/859: {Bump connectors and bond wires}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 74/40: characterised by their materials
- H10W 74/476: {Organic materials comprising silicon}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides a chip package structure having a heat sink and a method making the same. The method includes: bonding a chip to a top surface of a package substrate and forming a heat-conducting lead having an arc-shape and placed on the chip in a vertical direction, a first end of the heat-conducting lead is connected with a surface of the chip, and a second end is connected with a solder ball; forming a plastic package material layer that protects the chip and the heat-conducting lead; forming a heat-conducting adhesive layer on the surface of the plastic package material layer, where the heat-conducting adhesive layer is connected with the solder ball on the second end of the heat-conducting lead; and forming a heat dissipation layer on a surface of the heat-conducting adhesive layer. With the present disclosure, the heat dissipation efficiency of the chip is effectively improved.

## Claims

### Claim 1

A method for making a chip package structure having a heat sink, comprising:
providing a package substrate and a chip;
bonding the chip to a top surface of the package substrate;
forming a heat-conducting lead on the chip, wherein the heat-conducting lead comprises an arc-shaped vertical wire having a first end and a second end opposite to the first end, wherein the first end is connected with a surface of the chip through a wire bonding bump and the second end is connected with a solder ball;
disposing a plastic package material layer that packages the chip and the heat-conducting lead, wherein a surface of the plastic package material layer exposes the solder ball on the second end of the heat-conducting lead;
forming a heat-conducting adhesive layer on the surface of the plastic package material layer, wherein the heat-conducting adhesive layer is in contact with the solder ball on the second end of the heat-conducting lead; and
forming a heat dissipation layer on a surface of the heat-conducting adhesive layer.

### Claim 2 (depends on 1)

The method for making the chip package structure having the heat sink according to claim 1, wherein the heat-conducting adhesive layer is an electrically conductive material layer.

### Claim 3 (depends on 1)

The method for making the chip package structure having the heat sink according to claim 1, wherein the heat dissipation layer includes an uneven surface structure.

### Claim 4 (depends on 1)

The method for making the chip package structure having the heat sink according to claim 1, wherein the heat dissipation layer comprises a metal body layer and a coating layer on the metal body layer.

### Claim 5 (depends on 1)

The method for making the chip package structure having the heat sink according to claim 1, wherein the chip is bonded to the top surface of the package substrate by a bonding wire.

### Claim 6 (depends on 1)

The method for making the chip package structure having the heat sink according to claim 1, wherein the forming the heat-conducting lead having the arc-shaped vertical wire comprises:
providing a bonding wire and a capillary, fixing a position of the bonding wire by the capillary, forming a solder ball at an end of the bonding wire, and soldering the solder ball to a bonding pad on a surface of the chip;
generating a crack by forcing the capillary to deform a part where the bonding wire is connected to the solder ball;
lifting the capillary up by a preset distance in a vertical direction, the preset distance defines a length of the heat-conducting lead, making the capillary reciprocate along an arc-shaped trajectory while keeping the capillary in the vertical direction, to generate an internal stress in the bonding wire of the preset distance;
moving the capillary and the bonding wire in the vertical direction, breaking the bonding wire, forming the wire bonding bump, wherein the bonding wire under the capillary appears as an arc-shaped vertical line;
forming the solder ball on the second end of the heat-conducting lead;
soldering a top end of the bonding wire that appears as the arc-shaped vertical wire to the wire bonding bump by the capillary, wherein the bonding wire that appears as the arc-shaped vertical wire bends upward under an action of a soldering pressure; and
forming the heat-conducting lead on the wire bonding bump by breaking the bonding wire through the capillary.

### Claim 7 (depends on 6)

The method for making the chip package structure having the heat sink according to claim 6, wherein the generating of the crack by forcing the capillary to deform the part where the bonding wire is connected to the solder ball comprises: moving the capillary upward in the vertical direction, and moving the capillary to the right or left in a horizontal direction, thereby generating the crack.

### Claim 8 (depends on 6)

The method for making the chip package structure having the heat sink according to claim 6, wherein the forming of the heat-conducting lead on the wire bonding bump by breaking the bonding wire through the capillary comprises: moving the capillary upward in the vertical direction, and pulling the bonding wire upward by the capillary until the bonding wire is broken, thereby forming the heat-conducting lead.

### Claim 9 (depends on 1)

The method for making the chip package structure having the heat sink according to claim 1, wherein the disposing the plastic package material layer further comprises:
depositing the plastic package material on the top surface of the package substrate, exposed surfaces of the chip, and the heat-conducting lead; and
grinding and removing the plastic package material to expose the solder ball on the second end of the heat-conducting lead, thereby forming the plastic package material layer for plastic packaging the chip and the heat-conducting lead.

### Claim 10

A chip package structure having a heat sink, comprising:
a package substrate;
a chip, bonded to a top surface of the package substrate;
a plastic package material layer, disposed on an exposed part of the top surface of the package substrate and a top surface of the chip;
a heat-conducting adhesive layer, located on a top surface of the plastic package material layer;
a heat dissipation layer, located on a top surface of the heat-conducting adhesive layer; and
a heat-conducting lead having an arc-shape and placed on the chip in a vertical direction, wherein the heat-conducting lead includes a first end and a second end opposite to the first end, wherein the first end is connected with a surface of the chip through a wire bonding bump, the second end is connected with a solder ball, and the solder ball is connected with the heat-conducting adhesive layer.

### Claim 11 (depends on 10)

The chip package structure having the heat sink according to claim 10, wherein the chip is bonded to the top surface of the package substrate by a bonding wire, and wherein the bonding wire and the heat-conducting lead are made of a same material.

### Claim 12 (depends on 10)

The chip package structure having the heat sink according to claim 10, wherein the heat-conducting adhesive layer is an electrically conductive material layer.

### Claim 13 (depends on 10)

The chip package structure having the heat sink according to claim 10, wherein the heat dissipation layer includes an uneven surface structure.

### Claim 14 (depends on 10)

The chip package structure having the heat sink according to claim 10, wherein the heat dissipation layer comprises a metal body layer and a coating layer on the metal body layer.