# US 2021/0280508 A1 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0280508 A1 - Document ID: US20210280508A1 - Status: Published application - Kind: A1 - Application number: 17/001,933 - Filed: 2020-08-25 - Published: 2021-09-09 - Earliest claimed: 2020-03-03 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Takao SUEYAMA; Yosuke KOMORI - Web page: https://patentgrep.com/patent/US20210280508A1 ## CPC - H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes - H10W 20/43: Layouts of interconnections - H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) - H10D 64/257: {for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673)} - H10D 84/83: of only insulated-gate FETs [IGFET] - H10W 20/4421: {the principal metal being copper} - H10W 20/484: {Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device according to the present embodiment comprises a first metallic line. The first metallic line is provided above a substrate and extends in a first direction with a first width. At least one second metallic line is connected to the first metallic line and extends in a second direction from the first metallic line with a second width that is smaller than the first width. A dummy metallic line is arranged adjacently to the at least one second metallic line, connected to the first metallic line, and extends in the second direction from the first metallic line. The dummy metallic line is not electrically connected to lines other than the first metallic line. ## Claims ### Claim 1 A semiconductor device comprising: a first metallic line provided above a substrate and extending in a first direction with a first width; at least one second metallic line connected to the first metallic line and extending in a second direction from the first metallic line with a second width that is smaller than the first width; and a dummy metallic line arranged adjacently to the at least one second metallic line, connected to the first metallic line, and extending in the second direction from the first metallic line while not electrically connected to lines other than the first metallic line. ### Claim 2 (depends on 1) The device of claim 1, wherein copper is used as the first and second metallic lines and the dummy metallic line. ### Claim 3 (depends on 1) The device of claim 1, wherein a plurality of the second metallic lines are arrayed on the first metallic line, and the dummy metallic line is adjacent to at least one end of the arrayed second metallic lines. ### Claim 4 (depends on 2) The device of claim 2, wherein a plurality of the second metallic lines are arrayed on the first metallic line, and the dummy metallic line is adjacent to at least one end of the arrayed second metallic lines. ### Claim 5 (depends on 1) The device of claim 1, wherein the dummy metallic line is adjacent to both ends of the arrayed second metallic lines. ### Claim 6 (depends on 2) The device of claim 2, wherein the dummy metallic line is adjacent to both ends of the arrayed second metallic lines. ### Claim 7 (depends on 1) The device of claim 1, wherein a width of the dummy metallic line in a direction perpendicular to a longitudinal direction of the dummy metallic line is smaller than a third of a width of the first metallic line in a direction perpendicular to a longitudinal direction of the first metallic line. ### Claim 8 (depends on 2) The device of claim 2, wherein a width of the dummy metallic line in a direction perpendicular to a longitudinal direction of the dummy metallic line is smaller than a third of a width of the first metallic line in a direction perpendicular to a longitudinal direction of the first metallic line. ### Claim 9 (depends on 3) The device of claim 3, wherein a width of the dummy metallic line in a direction perpendicular to a longitudinal direction of the dummy metallic line is smaller than a third of a width of the first metallic line in a direction perpendicular to a longitudinal direction of the first metallic line. ### Claim 10 (depends on 1) The device of claim 1, wherein a length of the dummy metallic line in a longitudinal direction thereof is larger than a width of the dummy metallic line. ### Claim 11 (depends on 2) The device of claim 2, wherein a length of the dummy metallic line in a longitudinal direction thereof is larger than a width of the dummy metallic line. ### Claim 12 (depends on 3) The device of claim 3, wherein a length of the dummy metallic line in a longitudinal direction thereof is larger than a width of the dummy metallic line. ### Claim 13 (depends on 1) The device of claim 1, wherein an interval between the second metallic line and the dummy metallic line is equal to or less than 500 nanometers. ### Claim 14 (depends on 1) The device of claim 1, wherein the width of the second metallic line and a width of the dummy metallic line are equal to or less than 500 nanometers. ### Claim 15 (depends on 1) The device of claim 1, wherein a length of the dummy metallic line in a longitudinal direction thereof is equal to or more than 2 micrometers. ### Claim 16 (depends on 1) The device of claim 1, wherein a length of the dummy metallic line in a longitudinal direction thereof is equal to or less than a length of the second metallic line in a longitudinal direction thereof. ### Claim 17 (depends on 2) The device of claim 2, wherein a length of the dummy metallic line in a longitudinal direction thereof is equal to or less than a length of the second metallic line in a longitudinal direction thereof. ### Claim 18 (depends on 3) The device of claim 3, wherein a length of the dummy metallic line in a longitudinal direction thereof is equal to or less than a length of the second metallic line in a longitudinal direction thereof. ### Claim 19 A semiconductor device comprising: a first metallic line provided above a substrate and extending in a first direction with a first width; a plurality of second metallic lines connected to the first metallic line and extending in a second direction from the first metallic line with a second width that is smaller than the first width; and a dummy metallic line arranged adjacently to one side of an array of the second metallic lines, connected to the first metallic line, and extending in the second direction from the first metallic line while not electrically connected to lines other than the first metallic line. ### Claim 20 A semiconductor device comprising: a first metallic line provided above a substrate and extending in a first direction with a first width; a plurality of second metallic lines connected to the first metallic line and extending in a second direction from the first metallic line with a second width that is smaller than the first width; and a dummy metallic line arranged adjacently to an array of the second metallic lines, connected to the first metallic line, and extending in the second direction from the first metallic line while not electrically connected to lines other than the first metallic line, wherein a width of one of the second metallic lines located at one end of the array of the second metallic line is larger than that of other second metallic lines.