# US 2021/0280477 A1 · Semiconductor device structure with magnetic element

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- Number: US 2021/0280477 A1
- Document ID: US20210280477A1
- Status: Published application
- Kind: A1
- Application number: 17/328,801
- Filed: 2021-05-24
- Published: 2021-09-09
- Earliest claimed: 2019-08-22
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Mill-Jer WANG; Tang-Jung CHIU; Chi-Chang LAI; Chia-Heng TSAI; Mirng-Ji LII; Weii LIAO
- Web page: https://patentgrep.com/patent/US20210280477A1

## CPC

- H10P 74/277: {Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers}
- H10D 86/85: characterised by only passive components
- H10W 20/423: {Shielding layers}
- H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers}
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10D 1/20: Inductors
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first magnetic element and a second magnetic element over the semiconductor substrate. The semiconductor device structure also includes a first conductive line extending exceeding an edge of the first magnetic element. The semiconductor device structure further includes a second conductive line extending exceeding an edge of the second magnetic element. The second conductive line is electrically connected to the first conductive line.

## Claims

### Claim 1

A semiconductor device structure, comprising:
a semiconductor substrate;
a first magnetic element and a second magnetic element over the semiconductor substrate;
a first conductive line extending exceeding an edge of the first magnetic element; and
a second conductive line extending exceeding an edge of the second magnetic element, wherein the second conductive line is electrically connected to the first conductive line.

### Claim 2 (depends on 1)

The semiconductor device structure as claimed in claim 1, further comprising:
a third conductive line extending across the first magnetic element; and
a fourth conductive line extending across the second magnetic element, wherein the fourth conductive line is electrically connected to the third conductive line, and the fourth conductive line is electrically isolated from the first conductive line.

### Claim 3 (depends on 2)

The semiconductor device structure as claimed in claim 2, further comprising:
an insulating layer between the semiconductor substrate and the first magnetic element;
a first conductive feature between the insulating layer and the semiconductor substrate, wherein the first conductive line is electrically connected to the second conductive line through the first conductive feature; and
a second conductive feature between the insulating layer and the semiconductor substrate, wherein the third conductive line is electrically connected to the fourth conductive line through the second conductive feature.

### Claim 4 (depends on 3)

The semiconductor device structure as claimed in claim 3, wherein the third conductive line extends exceeding edges of the first conductive feature, and the second conductive line extends exceeding edges of the second conductive feature.

### Claim 5 (depends on 4)

The semiconductor device structure as claimed in claim 4, wherein the first conductive line, the first conductive feature, the second conductive line, the third conductive line, the second conductive feature, and the fourth conductive line together form a double helix structure.

### Claim 6 (depends on 1)

The semiconductor device structure as claimed in claim 1, wherein the first conductive line has a first portion overlapping the first magnetic element, the second conductive line has a second portion overlapping the second magnetic element, and the first portion is substantially parallel to the second portion.

### Claim 7 (depends on 1)

The semiconductor device structure as claimed in claim 1, further comprising a shielding ring over the semiconductor substrate, wherein the shielding ring surrounds the first magnetic element, the second magnetic element, the first conductive line, and the second conductive line.

### Claim 8 (depends on 7)

The semiconductor device structure as claimed in claim 7, further comprising a shielding element, wherein the shielding element is above the semiconductor substrate, and the shielding element is below the first magnetic element and the second magnetic element.

### Claim 9 (depends on 8)

The semiconductor device structure as claimed in claim 8, wherein the shielding element is a conductive mesh extending beyond edges of the first magnetic element and the second magnetic element.

### Claim 10 (depends on 9)

The semiconductor device structure as claimed in claim 9, wherein the shielding element is electrically connected to the shielding ring.

### Claim 11

A semiconductor device structure, comprising:
a semiconductor substrate;
a plurality of first conductive lines over the semiconductor substrate, wherein the first conductive lines are not electrically connected to each other;
a plurality of first magnetic structures wrapping around portions of the first conductive lines;
a plurality of second conductive lines over the semiconductor substrate, wherein the second conductive lines are electrically connected in series; and
a plurality of second magnetic structures wrapping around portions of the second conductive lines, wherein shapes of the second magnetic structures and the first magnetic structures are substantially the same.

### Claim 12 (depends on 11)

The semiconductor device structure as claimed in claim 11, further comprising:
a plurality of third conductive lines, wherein the third conductive lines are not electrically connected to each other, each of the third conductive lines is not electrically connected to the first conductive lines, and the first magnetic structures wrap around portions of the third conductive lines; and
a plurality of fourth conductive lines, wherein the fourth conductive lines are electrically connected in series, each of the fourth conductive lines is not electrically connected to the second conductive lines, and the second magnetic structures wrap around portions of the fourth conductive lines.

### Claim 13 (depends on 12)

The semiconductor device structure as claimed in claim 12, further comprising:
an insulating layer separating the semiconductor substrate from the second conductive lines and the fourth conductive lines;
a plurality of first conductive features between the semiconductor substrate and the insulating layer, wherein the second conductive lines are electrically connected in series through the first conductive features; and
a plurality of second conductive features between the semiconductor substrate and the insulating layer, wherein the fourth conductive lines are electrically connected in series through the second conductive features.

### Claim 14 (depends on 13)

The semiconductor device structure as claimed in claim 13, wherein one of the fourth conductive lines extends exceeding an edge of one of the first conductive features, and one of the second conductive lines extends exceeding an edge of one of the second conductive features.

### Claim 15 (depends on 14)

The semiconductor device structure as claimed in claim 14, wherein the second conductive lines and the first conductive features together form a first conductive path, the fourth conductive lines and the second conductive features together form a second conductive path, the first conductive path and the second conductive path are physically separated from each other, and the first conductive path and the second conductive path together form a double helix structure.

### Claim 16 (depends on 13)

The semiconductor device structure as claimed in claim 13, further comprising:
a shielding ring over the semiconductor substrate, wherein the shielding ring surrounds the second conductive lines and the second magnetic structures; and
a shielding element between the insulating layer and the semiconductor substrate, wherein the shielding element extends beyond edges of the second magnetic structures.

### Claim 17 (depends on 16)

The semiconductor device structure as claimed in claim 16, wherein:
the second conductive lines are electrically connected to a first testing bump and a second testing bump,
the shielding ring is electrically connected to a ground bump,
the first testing bump, the ground bump, and the second testing bump are sequentially arranged in a column, and
a shortest distance between the first testing bump and the second testing bump is greater than two times a pitch between two of the second magnetic structures that are next to each other.

### Claim 18

A semiconductor device structure, comprising:
a semiconductor substrate;
a plurality of first conductive lines over the semiconductor substrate, wherein the first conductive lines are electrically connected in series;
a plurality of second conductive lines over the semiconductor substrate, wherein the second conductive lines are electrically connected in series, and the second conductive lines are electrically isolated from the first conductive lines; and
a plurality of magnetic structures wrapping around portions of the first conductive lines and wrapping around portions of the second conductive lines.

### Claim 19 (depends on 18)

The semiconductor device structure as claimed in claim 18, wherein magnetic structures are arranged in a column.

### Claim 20 (depends on 18)

The semiconductor device structure as claimed in claim 18, further comprising:
a plurality of second magnetic structures surrounding the magnetic structures, wherein a size of each of the second magnetic structures are substantially the same as a size of each of the magnetic structures.