# US 2021/0280449 A1 · Stage and plasma processing apparatus

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- Number: US 2021/0280449 A1
- Document ID: US20210280449A1
- Status: Published application
- Kind: A1
- Application number: 17/183,625
- Filed: 2021-02-24
- Published: 2021-09-09
- Earliest claimed: 2020-03-09
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Takehiro UEDA
- Web page: https://patentgrep.com/patent/US20210280449A1

## CPC

- H10P 72/722: {Details of electrostatic chucks}
- H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)}
- H01J 37/3244: {Gas supply means}
- H01J 37/32642: {Focus rings}
- H01J 37/32715: {Workpiece holder}
- H10P 72/0434: {mainly by convection}
- H10P 72/72: using electrostatic chucks
- H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A stage to be disposed in a chamber of a plasma processing apparatus is provided. The stage includes a chuck with a mounting portion for a substrate and a first hole through the mounting portion. The stage includes a base disposed beneath the chuck, the base including a second hole through the base, and the second hole communicating with the first hole. The base includes a first cylindrical liner disposed in the second hole, the first cylindrical liner having a relative permittivity of 5 or less.

## Claims

### Claim 1

A stage to be disposed in a chamber of a plasma processing apparatus, the stage comprising:
a chuck including a first mounting portion for a substrate and a first hole through the first mounting portion;
a base disposed beneath the chuck, the base including a second hole through the base, and the second hole communicating with the first hole; and
a first cylindrical liner disposed in the second hole, the first cylindrical liner having a relative permittivity of 5 or less.

### Claim 2 (depends on 1)

The stage according to claim 1, wherein the first cylindrical liner is formed of a fluorine-containing material.

### Claim 3 (depends on 1)

The stage according to claim 1, further comprising a first sleeve between the first cylindrical liner and the base, the first sleeve having a higher relative permittivity than the first cylindrical liner.

### Claim 4 (depends on 3)

The stage according to claim 3, wherein a space to be depressurized for plasma processing is provided between the first cylindrical liner and the first sleeve.

### Claim 5 (depends on 1)

The stage according to claim 1, further comprising an insertion member accommodated in the first hole and the second hole,
wherein the chuck includes an upper surface, and
wherein a top surface of the insertion member is disposed at a location lower than the upper surface of the chuck.

### Claim 6 (depends on 1)

The stage according to claim 1, wherein the first hole and the second hole are gas supply holes for a heat transfer gas.

### Claim 7 (depends on 1)

The stage according to claim 1, further comprising an edge ring surrounding the first mounting portion; and
a second cylindrical liner having a relative permittivity of 5 or less,
wherein the base includes a second mounting portion for the edge ring and a third hole through the second mounting portion, and
wherein the second cylindrical liner is disposed in the third hole.

### Claim 8 (depends on 1)

The stage according to claim 1, further comprising an edge ring surrounding the first mounting portion; and
a second cylindrical liner having a relative permittivity of 5 or less,
wherein the chuck includes a second mounting portion for the edge ring and a third hole through the second mounting portion,
wherein the base includes a fourth hole through the base, the fourth hole communicating with the third hole, and
wherein the second cylindrical liner is disposed in the fourth hole.

### Claim 9 (depends on 8)

The stage according to claim 8, wherein the second cylindrical liner is formed of a fluorine-containing material.

### Claim 10 (depends on 8)

The stage according to claim 8, further comprising a second sleeve between the second cylindrical liner and the base, the second sleeve having a higher relative permittivity than the second cylindrical liner.

### Claim 11 (depends on 10)

The stage according to claim 10, wherein a space to be depressurized for plasma processing is provided between the second cylindrical liner and the second sleeve.

### Claim 12 (depends on 1)

The stage according to claim 1, wherein the chuck is an electrostatic chuck.

### Claim 13

A plasma processing apparatus comprising:
a chamber;
a stage disposed in the chamber; and
a radio frequency source,
wherein the stage includes:
a chuck including a first mounting portion for a substrate and a first hole through the first mounting portion;
a base beneath the chuck, the base including a second hole through the base, the second hole communicating with the first hole; and
a first cylindrical liner disposed in the second hole, the first cylindrical liner having a relative permittivity of 5 or less.