# US 2021/0280434 A1 · Semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2021/0280434 A1
- Document ID: US20210280434A1
- Status: Published application
- Kind: A1
- Application number: 17/327,580
- Filed: 2021-05-21
- Published: 2021-09-09
- Earliest claimed: 2017-11-30
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Hsi-Wen TIEN; Wei-Hao LIAO; Chih-Wei LU; Pin-Ren DAI; Chung-Ju LEE
- Web page: https://patentgrep.com/patent/US20210280434A1

## CPC

- H10W 70/095: {of vias therein}
- H10W 20/039: {also covering sidewalls of the conductive structures}
- H10W 20/063: {by forming conductive members before forming protective insulating material}
- H10W 20/0633: {using subtractive patterning of the conductive members}
- H10W 20/069: {by forming self-aligned vias or self-aligned contact plugs}
- H10W 20/0693: {by forming self-aligned vias}
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W 20/435: {Cross-sectional shapes or dispositions of interconnections}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An semiconductor device includes a first dielectric layer, an etch stop layer, an interconnect structure, and a second dielectric layer. The etch stop layer is over the first dielectric layer. The interconnect structure includes a conductive via in the first dielectric layer and the etch stop layer, a conductive line over the conductive via, an intermediate conductive layer over the conductive line, and a conductive pillar over the intermediate conductive layer. The interconnect structure is electrically conductive at least from a top of the conductive pillar to a bottom of the conductive via. The second dielectric layer surrounds the conductive line, the intermediate conductive layer, and the conductive pillar, wherein a bottom of the second dielectric layer is lower than a top of the conductive line, and a top of the second dielectric layer is higher than the top of the conductive line.

## Claims

### Claim 1

A device, comprising:
a first dielectric layer;
an etch stop layer over the first dielectric layer;
an interconnect structure, comprising:
a conductive via in the first dielectric layer and the etch stop layer;
a conductive line over the conductive via;
an intermediate conductive layer over the conductive line; and
a conductive pillar over the intermediate conductive layer, wherein the interconnect structure is electrically conductive at least from a top of the conductive pillar to a bottom of the conductive via; and
a second dielectric layer surrounding the conductive line, the intermediate conductive layer, and the conductive pillar, wherein a bottom of the second dielectric layer is lower than a top of the conductive line, and a top of the second dielectric layer is higher than the top of the conductive line.

### Claim 2 (depends on 1)

The device of claim 1, wherein the intermediate conductive layer is in contact with the conductive pillar and the conductive line.

### Claim 3 (depends on 1)

The device of claim 1, wherein the intermediate conductive layer is thinner than the conductive line and the conductive pillar.

### Claim 4 (depends on 1)

The device e of claim 1, wherein the top of the second dielectric layer is higher than a top of the intermediate conductive layer.

### Claim 5 (depends on 1)

The device of claim 1, wherein the top of the second dielectric layer is higher than a bottom of the intermediate conductive layer.

### Claim 6 (depends on 1)

The device of claim 1, further comprising:
a cap layer surrounding the conductive line, the intermediate conductive layer, and the conductive pillar.

### Claim 7 (depends on 6)

The device of claim 6, wherein the cap layer is between the second dielectric layer and the interconnect structure.

### Claim 8 (depends on 6)

The device of claim 6, wherein the cap layer is in contact with the second dielectric layer, the conductive line, the intermediate conductive layer, and the conductive pillar.

### Claim 9 (depends on 6)

The device of claim 6, wherein a top of the cap layer is higher than a top of the intermediate conductive layer.

### Claim 10 (depends on 6)

The device of claim 6, wherein a top of the cap layer is substantially aligned laterally with the top of the second dielectric layer and the top of the conductive pillar.

### Claim 11

A device, comprising:
a dielectric layer;
a conductive line in the dielectric layer;
an intermediate conductive layer in the dielectric layer and over the conductive line;
a conductive pillar in the dielectric layer and over the intermediate conductive layer, wherein a top surface of the intermediate conductive layer has a first portion covered by the conductive pillar and a second portion free from coverage by the conductive pillar; and
a cap layer in the dielectric layer and extending along sidewalls of the conductive pillar, the second portion of the top surface of the intermediate conductive layer, and sidewalls of the intermediate conductive layer and the conductive line, wherein the dielectric layer has a portion that is lower than a top surface of the conductive pillar and vertically overlaps the second portion of the top surface of the intermediate conductive layer.

### Claim 12 (depends on 11)

The device of claim 11, wherein the first portion of the top surface of the intermediate conductive layer is in contact with the conductive pillar.

### Claim 13 (depends on 11)

The device of claim 11, wherein an obtuse angle is between at least one of the sidewalls of the conductive pillar and the second portion of the top surface of the intermediate conductive layer.

### Claim 14 (depends on 11)

The device of claim 11, wherein the conductive line and the intermediate conductive layer comprise different materials.

### Claim 15 (depends on 11)

The device of claim 11, wherein the conductive line and the conductive pillar comprise the same material.

### Claim 16

A device, comprising:
a first dielectric layer;
an etch stop layer over the first dielectric layer;
a second dielectric layer over the etch stop layer;
a conductive via in the first dielectric layer and the etch stop layer;
a conductive line in the second dielectric layer and over the conductive via;
an intermediate conductive layer in the second dielectric layer and over the conductive line;
a conductive pillar in the second dielectric layer and over and in contact with the intermediate conductive layer, wherein the conductive pillar is defined by a single piece of material that is continuous throughout, and the intermediate conductive layer extends beyond an entire width of the conductive pillar; and
a cap layer between the second dielectric layer and a combination of the conductive pillar, the intermediate conductive layer, and the conductive line, wherein a top of the cap layer is substantially aligned laterally with a top of the conductive pillar.

### Claim 17 (depends on 16)

The device of claim 16, wherein the top of the cap layer is substantially aligned laterally with a top of the second dielectric layer.

### Claim 18 (depends on 16)

The device of claim 16, wherein the conductive pillar and the conductive via taper in opposite directions.

### Claim 19 (depends on 16)

The device of claim 16, wherein the conductive line is defined by a single piece of material that is continuous throughout

### Claim 20 (depends on 16)

The device of claim 16, wherein the intermediate conductive layer and the conductive pillar comprise different materials.