# US 2021/0280416 A1 · Manufacturing method and support of semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0280416 A1 - Document ID: US20210280416A1 - Status: Published application - Kind: A1 - Application number: 17/012,337 - Filed: 2020-09-04 - Published: 2021-09-09 - Earliest claimed: 2020-03-03 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Tatsuo MIGITA - Web page: https://patentgrep.com/patent/US20210280416A1 ## CPC - H10P 14/3406: {Carbon, e.g. diamond-like carbon} - H10P 54/00: Cutting or separating of wafers, substrates or parts of devices - C23C 14/06: characterised by the coating material ({C23C14/0021} , C23C14/04 take precedence) - C23C 14/0605: {Carbon} - C23C 14/58: After-treatment - H10P 14/38: {characterised by treatments done after the formation of the materials} - H10P 14/662: {Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548)} - H10P 72/74: {using temporarily an auxiliary support} - H10P 72/7448: {the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer} - H10P 95/11: {Separation of active layers from substrates} - H10W 70/68: Shapes or dispositions thereof - H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)} - H10P 72/7412: {the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support} - H10P 72/7416: {used during dicing or grinding} - H10P 72/7422: {used to protect an active side of a device or wafer} - H10P 72/7424: {used as a support during the manufacture of self-supporting substrates} - H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A manufacturing method of an embodiment of a semiconductor device, the manufacturing method includes: heating a second layer of a first member including a first layer, the second layer, and a third layer, in which the first layer includes a support layer, the second layer includes a compound containing carbon and at least one element selected from the group consisting of silicon and metals, the third layer includes a semiconductor layer and/or a wiring layer, and the second layer is located between the first layer and the third layer, and obtaining a second member in which a carbonaceous material layer is formed on a surface of the second layer and/or a carbonaceous material region is formed inside the second layer; and cleaving the second member from the carbonaceous material layer or the carbonaceous material region, and obtaining a third member including the third layer. ## Claims ### Claim 1 A manufacturing method of a semiconductor device, the manufacturing method comprising: heating a second layer of a first member including a first layer, the second layer, and a third layer, in which the first layer includes a support layer, the second layer includes a compound containing carbon and at least one element selected from the group consisting of silicon and metals, the third layer includes a semiconductor layer and/or a wiring layer, and the second layer is located between the first layer and the third layer, and obtaining a second member in which a carbonaceous material layer is formed on a surface of the second layer and/or a carbonaceous material region is formed inside the second layer; and cleaving the second member from the carbonaceous material layer or the carbonaceous material region, and obtaining a third member including the third layer. ### Claim 2 (depends on 1) The manufacturing method according to claim 1, further comprising: forming the second layer on the first layer; and forming the third layer on the second layer. ### Claim 3 (depends on 1) The manufacturing method according to claim 1, wherein a metal layer is provided between the first and second layers of the first member and/or between the second and third layers of the first member, the metal layer is a layer of at least one metal selected from the group consisting of W, Ta, Cu, Ti, V, Cr, Nb, Mo, Zr, Hf, Co, Sc, Mn, Fe, Ni, Au, Ag, Pt and Pd or of an alloy containing the at least one metal, and wherein the carbonaceous material layer is formed between the metal layer and the second layer. ### Claim 4 (depends on 1) The manufacturing method according to claim 1, wherein the third member includes the second layer and/or the carbonaceous material layer, and wherein the manufacturing method further includes removing the second layer and/or the carbonaceous material layer in the third member to obtain a fourth member. ### Claim 5 (depends on 1) The manufacturing method according to claim 1, wherein the metal of the compound is at least one selected from the group consisting of W, Ta, Cu, Ti, V, Cr, Nb, Mo, Zr, Hf, Co, Sc, Mn, Fe and Ni. ### Claim 6 (depends on 1) The manufacturing method according to claim 1, wherein the compound is at least one selected from the group consisting of SiC, SiCN, SiCO, SiCON, WC, TaC, CuC, TiC, VC, CrC, NbC, MoC, ZrC, HfC, CoC, ScC and MnC. ### Claim 7 (depends on 1) The manufacturing method according to claim 1, wherein the second layer contains particles of at least one metal selected from the group consisting of W, Ta, Cu, Ti, V, Cr, Nb, Mo, Zr, Hf, Co, Sc, Mn, Fe, Ni, Au, Ag, Pt, and Pd or particles of an alloy containing the at least one metal. ### Claim 8 (depends on 1) The manufacturing method according to claim 1, wherein 90 wt % or more of the second layer of the first member is the compound. ### Claim 9 (depends on 1) The manufacturing method according to claim 1, wherein a thickness of the second layer is 1 nm or more and 500 nm or less. ### Claim 10 (depends on 1) The manufacturing method according to claim 1, wherein a concentration of the compound containing carbon and the at least one element selected from the group consisting of silicon and metals, the compound being included in the second layer before being heated, is 98 wt % or more and 100 wt %. ### Claim 11 (depends on 1) The manufacturing method according to claim 1, wherein the first member is obtained by forming the third layer on a surface of the second layer of the support in which the second layer is provided on the first layer, and wherein a heat treatment temperature for forming the third layer is 300° C. or higher and 950° C. or lower. ### Claim 12 (depends on 1) The manufacturing method according to claim 1, wherein a thickness of the carbonaceous material layer is 0.1 nm or more and 100 nm or less. ### Claim 13 (depends on 1) The manufacturing method according to claim 1, wherein a heating temperature in the obtaining the second member is 1000° C. or higher and 1500° C. or lower. ### Claim 14 (depends on 1) The manufacturing method according to claim 1, wherein 50 wt % or more of the carbonaceous material layer is graphene and/or graphite. ### Claim 15 (depends on 7) The manufacturing method according to claim 7, wherein an average primary diameter of the particles of the metal or the alloy is 1 nm or more and 10 nm or less. ### Claim 16 A support comprising: a first layer including a support layer; and a second layer provided on the first layer and including a compound containing carbon and at least one element selected from the group consisting of silicon and metals. ### Claim 17 (depends on 16) The support according to claim 16, further comprising a metal layer between the first layer and the second layer and/or on an opposite surface of the second layer, the surface being remote from the first layer. ### Claim 18 (depends on 16) The support according to claim 16, wherein a thickness of the second layer is 1 nm or more and 500 nm or less. ### Claim 19 (depends on 16) The support according to claim 16, wherein a concentration of the compound contained in the second layer is 90 wt % or more.