# US 2021/0280411 A1 · Deposition method

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- Number: US 2021/0280411 A1
- Document ID: US20210280411A1
- Status: Published application
- Kind: A1
- Application number: 17/184,807
- Filed: 2021-02-25
- Published: 2021-09-09
- Earliest claimed: 2020-03-06
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Koji SASAKI; Keisuke SUZUKI; Tomoya HASEGAWA
- Web page: https://patentgrep.com/patent/US20210280411A1

## CPC

- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- C23C 16/401: {containing silicon}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6686: {the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane}
- H10P 14/6687: {the compound comprising silicon and nitrogen}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A deposition method of forming silicon oxide films collectively on a plurality of substrates in a processing container performs a plurality of execution cycles each of which includes: supplying a silicon material gas containing an organoamino-functionalized oligosiloxane compound into the processing container; and supplying an oxidizing gas into the processing container adjusted to a pressure of 1 Torr to 10 Torr (133 Pa to 1333 Pa).

## Claims

### Claim 1

A deposition method of forming silicon oxide films collectively on a plurality of substrates in a processing container, the deposition method performing a plurality of execution cycles each of which includes:
supplying a silicon material gas containing an organoamino-functionalized oligosiloxane compound into the processing container; and
supplying an oxidizing gas into the processing container adjusted to a pressure of 1 Torr to 10 Torr (133 Pa to 1333 Pa).

### Claim 2 (depends on 1)

The deposition method according to claim 1, wherein the organoamino-functionalized oligosiloxane compound is 2-dimethylamino-2,4,6,8-tetramethylcyclotetrasiloxane.

### Claim 3 (depends on 1)

The deposition method according to claim 1, wherein the oxidizing gas contains an O3 gas.

### Claim 4 (depends on 1)

The deposition method according to claim 1, wherein the pressure in the processing container in the supplying the oxidizing gas is 1.5 Torr to 10 Torr (200 Pa to 1333 Pa).

### Claim 5 (depends on 1)

The deposition method according to claim 1, wherein the processing container is able to accommodate a substrate holder that holds the plurality of substrates with intervals in a vertical direction.