# US 2021/0280409 A1 · Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0280409 A1 - Document ID: US20210280409A1 - Status: Published application - Kind: A1 - Application number: 17/191,328 - Filed: 2021-03-03 - Published: 2021-09-09 - Earliest claimed: 2020-03-04 - Assignees: Kokusai Electric Corporation - Applicants: Kokusai Electric Corporation - Inventors: Hiroki YAMASHITA; Yoshitomo HASHIMOTO - Web page: https://patentgrep.com/patent/US20210280409A1 ## CPC - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - C23C 16/30: Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides - C23C 16/45531: {specially adapted for making ternary or higher compositions} - C23C 16/45534: {Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers} - H10P 14/6522: {introduced into a nitride material, e.g. changing SiN to SiON} - H10P 14/6529: {by exposure to a gas or vapour} - H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane} - H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC} - H10P 30/226: {at a temperature lower than room temperature} - H10W 20/096: {by contacting with gases, liquids or plasmas} - H10W 20/098: {by filling between adjacent conductive parts} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract There is included (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on a substrate by supplying a film-forming gas to the substrate at a first temperature; and (b) modifying the first film into a second film by supplying an oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising: (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on a substrate by supplying a film-forming gas to the substrate at a first temperature; and (b) modifying the first film into a second film by supplying an oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature. ### Claim 2 (depends on 1) The method of claim 1, wherein a concave portion is formed in a surface of the substrate, and wherein in (a), the first film is formed so as to fill an inside of the concave portion. ### Claim 3 (depends on 1) The method of claim 1, wherein the first film contains at least silicon, oxygen, and carbon. ### Claim 4 (depends on 3) The method of claim 3, wherein the second film contains at least silicon, oxygen, and carbon. ### Claim 5 (depends on 1) The method of claim 1, wherein the first film contains at least silicon, oxygen, carbon, and nitrogen. ### Claim 6 (depends on 5) The method of claim 5, wherein the second film contains at least silicon, oxygen, carbon, and nitrogen. ### Claim 7 (depends on 1) The method of claim 1, wherein the film-forming gas includes a silicon-containing gas, a carbon-containing gas, and an oxygen-containing gas, or includes a silicon- and carbon-containing gas and an oxygen-containing gas. ### Claim 8 (depends on 7) The method of claim 7, wherein in (a), a cycle is performed a predetermined number of times, the cycle including non-simultaneously performing: supplying the silicon-containing gas to the substrate; supplying the carbon-containing gas to the substrate; and supplying the oxygen-containing gas to the substrate, or a cycle is performed a predetermined number of times, the cycle including non-simultaneously performing: supplying the silicon- and carbon-containing gas to the substrate; and supplying the oxygen-containing gas to the substrate. ### Claim 9 (depends on 1) The method of claim 1, wherein the film-forming gas includes a silicon-containing gas, a carbon- and nitrogen-containing gas, and an oxygen-containing gas, or includes a silicon- and carbon-containing gas, a nitrogen-containing gas, and an oxygen-containing gas. ### Claim 10 (depends on 9) The method of claim 9, wherein in (a), a cycle is performed a predetermined number of times, the cycle including non-simultaneously performing: supplying the silicon-containing gas to the substrate; supplying the carbon- and nitrogen-containing gas to the substrate; and supplying the oxygen-containing gas to the substrate, or a cycle is performed a predetermined number of times, the cycle including non-simultaneously performing: supplying the silicon- and carbon-containing gas to the substrate; supplying the nitrogen-containing gas to the substrate; and supplying the oxygen-containing gas to the substrate. ### Claim 11 (depends on 7) The method of claim 7, wherein the oxygen-containing gas supplied in (a) has a molecular structure different from a molecular structure of the oxygen- and hydrogen-containing gas supplied in (b). ### Claim 12 (depends on 1) The method of claim 1, wherein the oxygen- and hydrogen-containing gas includes at least one selected from the group of a H2O gas and a H2O2 gas. ### Claim 13 (depends on 1) The method of claim 1, wherein the concentration of carbon in the first film is equal to or more than 20 at % and equal to or less than 50 at %. ### Claim 14 (depends on 1) The method of claim 1, wherein a concentration of oxygen in the second film is higher than a concentration of oxygen in the first film, and wherein a concentration of carbon in the second film is lower than the concentration of carbon in the first film. ### Claim 15 (depends on 1) The method of claim 1, wherein the first film formed in (a) includes a seam or a void, and wherein in (b), the seam or the void in the first film is eliminated by expanding the first film. ### Claim 16 (depends on 1) The method of claim 1, wherein the second temperature is a temperature that is higher than the first temperature. ### Claim 17 (depends on 1) The method of claim 1, further comprising (c) annealing the second film at a third temperature that is equal to or higher than the second temperature. ### Claim 18 (depends on 17) The method of claim 17, wherein the third temperature is a temperature that is higher than the second temperature. ### Claim 19 A substrate processing apparatus comprising: a process chamber in which a substrate is processed; a film-forming gas supply system configured to supply a film-forming gas to the substrate in the process chamber; an oxygen- and hydrogen-containing gas supply system configured to supply an oxygen- and hydrogen-containing gas to the substrate in the process chamber; and a controller configured to be capable of controlling the film-forming gas supply system and the oxygen- and hydrogen-containing gas supply system so as to perform: (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on the substrate by supplying the film-forming gas to the substrate at a first temperature; and (b) modifying the first film into a second film by supplying the oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature. ### Claim 20 A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising: (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on a substrate by supplying a film-forming gas to the substrate at a first temperature; and (b) modifying the first film into a second film by supplying an oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature.