# US 2021/0280397 A1 · Plasma processing apparatus, semiconductive member, and semiconductive ring

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- Number: US 2021/0280397 A1
- Document ID: US20210280397A1
- Status: Published application
- Kind: A1
- Application number: 17/191,085
- Filed: 2021-03-03
- Published: 2021-09-09
- Earliest claimed: 2020-03-05
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Yoichi KUROSAWA; Shoichiro MATSUYAMA; Yasuharu SASAKI; Chishio KOSHIMIZU
- Web page: https://patentgrep.com/patent/US20210280397A1

## CPC

- H01J 37/32715: {Workpiece holder}
- H10P 72/0421: {for drying etching}
- H10P 72/72: using electrostatic chucks
- H10P 72/7611: {characterised by edge profile or support profile}
- H01J 2237/0044: of objects being observed or treated
- H01J 2237/2007: Holding mechanisms
- H01J 2237/334: Etching
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A plasma processing apparatus includes a chamber, a stage, a semiconductive ring, a power source, at least one conductive member, and a conductive layer. The chamber has a plasma processing space. The stage is disposed in the plasma processing space and has an electrostatic chuck. The semiconductive ring is disposed on the stage so as to surround a substrate placed on the stage, the semiconductive ring having a first face. The at least one conductive member is disposed in the stage and in electrical connection with the power source. The conductive layer is disposed on the first face of the semiconductive ring and in electrical connection with the at least one conductive member.

## Claims

### Claim 1

A plasma processing apparatus, comprising:
a chamber having a plasma processing space;
a stage disposed in the plasma processing space, the stage having an electrostatic chuck; a semiconductive ring disposed on the stage so as to surround a substrate placed on the stage, the semiconductive ring having a first face;
a power source;
at least one conductive member disposed in the stage, the conductive member being in electrical connection with the power source; and
a conductive layer disposed on the first face of the semiconductive ring, the conductive layer being in electrical connection with the at least one conductive member.

### Claim 2 (depends on 1)

The plasma processing apparatus according to claim 1, wherein the conductive layer is in ohmic contact with the semiconductive ring.

### Claim 3 (depends on 2)

The plasma processing apparatus according to claim 2, wherein the ohmic contact is formed by any one of sputtering, vapor deposition, plating, welding, and annealing of a conductive metal.

### Claim 4 (depends on 3)

The plasma processing apparatus according to claim 3, wherein the conductive metal is any one of Al, Ni, Co, V, Ti, Zr, Hf, W, and Au.

### Claim 5 (depends on 4)

The plasma processing apparatus according to claim 4, wherein the semiconductive ring has a bottom face and an annular protrusion extending downwardly from the bottom face, and the annular protrusion has an inner side as the first face.

### Claim 6 (depends on 5)

The plasma processing apparatus according to claim 5, wherein the at least one conductive member comprises a single conductive ring in contact with the semiconductive ring, and
the conductive layer extends over the entire inner side of the annular protrusion.

### Claim 7 (depends on 5)

The plasma processing apparatus according to claim 5, wherein the at least one conductive member comprises a plurality of discrete conductive members in contact with the semiconductive ring, and
the conductive layer extends on the entire inner side of the annular protrusion.

### Claim 8 (depends on 7)

The plasma processing apparatus according to claim 7, wherein the conductive layer further extends under the entire bottom face of the semiconductive ring.

### Claim 9

A plasma processing apparatus comprising:
a chamber having a plasma processing space;
a semiconductive member having a first face exposed to the plasma processing space and a second face opposite to the first face;
a conductive layer disposed on the second face of the semiconductive member;
a power source; and
a conductive member electrically connected to the power source and in contact with the conductive layer.

### Claim 10 (depends on 9)

The plasma processing apparatus according to claim 9, wherein the conductive layer is in ohmic contact with the semiconductive member.

### Claim 11 (depends on 10)

The plasma processing apparatus according to claim 10, wherein the ohmic contact is formed by any one of sputtering, vapor deposition, plating, welding, and annealing of a conductive metal.

### Claim 12 (depends on 11)

The plasma processing apparatus according to claim 11, wherein the conductive metal is any one of Al, Ni, Co, V, Ti, Zr, Hf, W, and Au.

### Claim 13

A plasma processing apparatus comprising:
a chamber having a plasma processing space;
a semiconductive member being at least part of the chamber and having a first face exposed to the plasma processing space and a second face opposite to the first face;
a conductive layer disposed on the second face of the semiconductive member; and
a conductive member in contact with the conductive layer, the conductive member being grounded.