# US 2021/0280392 A1 · Film stress control for plasma enhanced chemical vapor deposition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0280392 A1 - Document ID: US20210280392A1 - Status: Published application - Kind: A1 - Application number: 17/328,509 - Filed: 2021-05-24 - Published: 2021-09-09 - Earliest claimed: 2018-12-14 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Chien-Teh KAO; Tae Kyung WON; Carl A. SORENSEN; Sanjay D. YADAV; Young Dong LEE; Shinichi KURITA; Soo Young CHOI - Web page: https://patentgrep.com/patent/US20210280392A1 ## CPC - H01J 37/32449: {Gas control, e.g. control of the gas flow} - C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species - C23C 16/45565: {Shower nozzles} - C23C 16/45572: {Cooled nozzles} - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - C23C 16/505: using radio frequency discharges - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - H01J 37/321: {the radio frequency energy being inductively coupled to the plasma} - H01J 37/32174: {Circuits specially adapted for controlling the RF discharge} - H01J 37/32458: {Vessel} - H01J 37/32715: {Workpiece holder} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 72/722: {Details of electrostatic chucks} - H01J 2237/3321: CVD [Chemical Vapor Deposition] - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly. ## Claims ### Claim 1 A plasma deposition chamber, comprising: a showerhead having a plurality of perforated members, each of the perforated members supported by adjacent support members of a plurality of support members; a plurality of dielectric plates disposed above the plurality of perforated members, each dielectric plate supported by the adjacent support members, wherein a respective perforated member, a respective dielectric plate, and the adjacent support members define a gas volume, the gas volume in fluid communication with the adjacent support members; and a respective dielectric plate, the showerhead, and the adjacent support members define a coil volume; a plurality of inductive coils, each inductive coil supported by each dielectric plate in the coil volume; and a substrate support assembly. ### Claim 2 (depends on 1) The chamber of claim 1, wherein the support members include conduits formed therein for flowing precursor gases. ### Claim 3 (depends on 2) The chamber of claim 2, wherein the support members further include coolant channels formed therein for flowing a coolant. ### Claim 4 (depends on 1) The chamber of claim 1, wherein the substrate support assembly includes a substrate bias plate coupled to a power source and a low pass filter disposed between the substrate bias plate and the power source. ### Claim 5 (depends on 4) The chamber of claim 4, wherein the power source is a DC type power source configured to provide a constant DC bias to the substrate bias plate in either a positive or negative polarity. ### Claim 6 (depends on 5) The chamber of claim 5, wherein the constant DC bias is provided at a power level from about 50 W to about 1000 W. ### Claim 7 (depends on 4) The chamber of claim 4, wherein the power source is a DC type power source configured to provide a pulsed DC bias to the substrate bias plate in either a positive or negative polarity. ### Claim 8 (depends on 7) The chamber of claim 7, wherein the pulsed DC bias is pulsed at a frequency from about 50 kHz to about 500 kHz. ### Claim 9 (depends on 4) The chamber of claim 4, wherein the low pass filter prevents RF power supplied to the inductive coils from coupling with power source. ### Claim 10 (depends on 1) The chamber of claim 1, wherein a top surface of each dielectric plate is in contact with each of the inductive coils in the coil volume. ### Claim 11 (depends on 1) The chamber of claim 1, wherein the plurality of support members are arranged in a grid configuration separating each of the plurality of perforated members, dielectric plates, and inductive coils. ### Claim 12 (depends on 1) The chamber of claim 1, wherein each of the plurality of inductive coils is coupled to an RF type power source. ### Claim 13 A showerhead, comprising: a plurality of perforated members, each of the perforated members supported by adjacent support members of a plurality of support members; a plurality of dielectric plates disposed above the plurality of perforated members, each dielectric plate supported by the adjacent support members, wherein a respective perforated member, a respective dielectric plate, and the adjacent support members define a gas volume, the gas volume in fluid communication with the adjacent support members; and a respective dielectric plate, the showerhead, and the adjacent support members define a coil volume; and a plurality of inductive coils, each inductive coil supported by each dielectric plate in the coil volume. ### Claim 14 (depends on 13) The showerhead of claim 13, wherein the plurality of support members are arranged in a grid configuration separating each of the plurality of perforated members, dielectric plates, and inductive coils. ### Claim 15 (depends on 13) The showerhead of claim 13, wherein each of the plurality of perforated members and the plurality of support members includes an interface portion, and each interface portion includes one or more removable strips. ### Claim 16 A method, comprising: disposing a substrate onto a substrate support, the substrate support disposed in a processing region of a chamber body; providing precursor gases from a gas source to a plurality of gas volumes of a showerhead, each gas volume defined by a respective perforated member, a respective dielectric plate disposed above the respective perforated member, and adjacent support members, the providing the precursor gases to the plurality of gas volumes comprises flowing the precursor gases through conduits disposed in each of the adjacent support members; supplying RF power to each respective dielectric plate to form energized precursor gases in the plurality of gas volumes; flowing the energized precursor gases through each respective perforated member into the processing region of the chamber body; and applying a DC bias to a substrate bias plate disposed in the substrate support to bias the energized precursor gases toward the substrate. ### Claim 17 (depends on 16) The method of claim 16, wherein the DC bias is a constant DC bias provided to the substrate bias plate. ### Claim 18 (depends on 17) The method of claim 17, wherein the DC bias is provided at a power level from about 50 W to about 1000 W. ### Claim 19 (depends on 16) The method of claim 16, wherein the DC bias is a pulsed DC bias provided to the substrate bias plate, the pulsed DC bias pulsed at a frequency from about 50 kHz to about 500 kHz. ### Claim 20 (depends on 16) The method of claim 16, wherein the respective dielectric plate, the showerhead, and the adjacent support members define a coil volume, wherein each inductive coupler of a plurality of inductive couplers is supported by each respective dielectric plate in the coil volume.