# US 2021/0280389 A1 · Large-area vhf pecvd chamber for low-damage and high-throughput plasma processing > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0280389 A1 - Document ID: US20210280389A1 - Status: Published application - Kind: A1 - Application number: 16/321,660 - Filed: 2017-07-31 - Published: 2021-09-09 - Earliest claimed: 2017-07-31 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Shuran SHENG; Shinobu ABE; Keita KUWAHARA; Su Ho CHO - Web page: https://patentgrep.com/patent/US20210280389A1 ## CPC - H01J 37/32174: {Circuits specially adapted for controlling the RF discharge} - H01J 37/32715: {Workpiece holder} - C23C 16/4581: {characterised by material of construction or surface finish of the means for supporting the substrate} - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - C23C 16/505: using radio frequency discharges - H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream} - H01J 37/3244: {Gas supply means} - H01J 37/32577: {Electrical connecting means} - H01J 37/32807: {Construction (includes replacing parts of the apparatus)} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract Embodiments disclosed herein generally relate to a plasma processing system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber which includes at least one VHF power generator coupled to a diffuser within the plasma processing chamber. The feeding location offset of each VHF power generator and the controlling of each VHF power generator via phase modulation and sweeping allows for plasma uniformity improvements by compensating for the non-uniformity of the thin film patterns produced by the chamber, due to the standing wave effect. The power distribution between the multiple VHF power generators coupled to and/or disposed at different locations on the backing plate may be produced by dynamic phase modulation between the VHF power applied at the different coupling points. ## Claims ### Claim 1 A plasma processing chamber, comprising: a diffuser; a backing plate coupled to the diffuser, wherein the backing plate has a first corner location, a second corner location, a third corner location, and a fourth corner location, and wherein the backing plate has an opening at a substantial center of the backing plate for a gas feed; and a VHF power generator coupled to the backing plate at the first corner location, the second corner location, the third corner location, and the fourth corner location. ### Claim 2 (depends on 1) The plasma processing chamber of claim 1, wherein the backing plate is coupled to a lid of the plasma processing chamber. ### Claim 3 (depends on 1) The plasma processing chamber of claim 1, further comprising a controller operatively connected to the VHF power generator, wherein the controller is programmed to control operation of the VHF power generator at a first frequency via an automatic match, and the first frequency is between about 30 MHz and about 70 MHz. ### Claim 4 (depends on 3) The plasma processing chamber of claim 3, wherein the controller is further programmed to perform phase modulation and sweeping. ### Claim 5 A plasma processing chamber, comprising: a diffuser; a backing plate coupled to the diffuser, wherein the backing plate has an opening at a substantial center of the backing plate for a gas feed; a first VHF power generator coupled to the backing plate at a first radius from a center of the backing plate and at a first azimuth angle; a second VHF power generator coupled to the backing plate at a second radius from the center of the backing plate and at a second azimuth angle; a third VHF power generator coupled to the backing plate at a third radius from the center of the backing plate and at a third azimuth angle; a fourth VHF power generator coupled to the backing plate at a fourth radius from the center of the backing plate and at a fourth azimuth angle; and a controller operatively connected to the plasma processing chamber, wherein the controller is programmed to control operation of the first VHF power generator, the second VHF power generator, the third VHF power generator, and the fourth VHF power generator. ### Claim 6 (depends on 5) The plasma processing chamber of claim 5, wherein the backing plate is coupled to a lid of the plasma processing chamber. ### Claim 7 (depends on 5) The plasma processing chamber of claim 5, wherein the controller is programmed to control operation of the first VHF power generator, the second VHF power generator, the third VHF power generator, and the fourth VHF power generator at a first frequency via an automatic match, and the first frequency is between about 30 MHz and about 70 MHz. ### Claim 8 (depends on 5) The plasma processing chamber of claim 5, wherein the controller is further programmed to perform phase modulation and sweeping. ### Claim 9 (depends on 5) The plasma processing chamber of claim 5, wherein the second VHF power generator and the fourth VHF power generator each generate power at a frequency between about 35 MHz and about 75 MHz; and the second VHF power generator is configured to provide power out of phase with that provided by the fourth VHF power generator. ### Claim 10 (depends on 5) The plasma processing chamber of claim 5, wherein the first VHF power generator and the third VHF power generator each generate power at a frequency different than that of the second VHF power generator and the fourth VHF power generator. ### Claim 11 (depends on 5) The plasma processing chamber of claim 5, wherein the first VHF power generator is configured to provide power out of phase with that provided by the third VHF power generator. ### Claim 12 (depends on 5) The plasma processing chamber of claim 5, further comprising at least one magnetic ferrite block coupled to the backing plate, and the magnetic ferrite block is disposed in a gap between the backing plate and a cover plate. ### Claim 13 A plasma processing chamber, comprising: a diffuser; a backing plate coupled to the diffuser, wherein the backing plate has an opening at a substantial center of the backing plate for a gas feed; a plurality of VHF power generators, wherein each VHF power generator is coupled to the backing plate at a location disposed approximate an edge of the backing plate; and at least one magnetic ferrite block coupled to the backing plate. ### Claim 14 (depends on 13) The plasma processing chamber of claim 13, wherein the at least one magnetic ferrite block is disposed in a gap between the backing plate and a cover plate. ### Claim 15 (depends on 13) The plasma processing chamber of claim 13, further comprising: a controller operatively connected to the plasma processing chamber, wherein the controller is programmed to control operation of the each VHF power generator, and the controller is further programmed to perform phase modulation and sweeping.