# US 2021/0280388 A1 · Ion implanter and model generation method

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- Number: US 2021/0280388 A1
- Document ID: US20210280388A1
- Status: Published application
- Kind: A1
- Application number: 17/191,218
- Filed: 2021-03-03
- Published: 2021-09-09
- Earliest claimed: 2020-03-04
- Assignees: Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Applicants: Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Inventors: Kazuhisa Ishibashi; Tetsuya Kudo; Mikio Yamaguchi
- Web page: https://patentgrep.com/patent/US20210280388A1

## CPC

- H01J 37/3171: {for ion implantation}
- H01J 37/304: Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals
- H01J 2237/24514: Beam diagnostics including control of the parameter or property diagnosed (H01J2237/30472 takes precedence)
- H01J 2237/30416: Handling of data
- H01J 2237/31703: Dosimetry
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.

## Claims

### Claim 1

An ion implanter comprising:
a beam generation device that generates an ion beam, based on an implantation recipe;
a plurality of measurement devices that measure at least one physical quantity of the ion beam; and
a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.

### Claim 2 (depends on 1)

The ion implanter according to claim 1,
wherein the control device acquires at least one implantation parameter set in the implantation recipe, as a parameter included in the data set, and
the model represents a correlation between the plurality of measurement values and the at least one implantation parameter.

### Claim 3 (depends on 1)

The ion implanter according to claim 1,
wherein the control device acquires at least one operation parameter of the beam generation device for generating the ion beam based on the implantation recipe, as a parameter included in the data set, and
the model represents a correlation between the plurality of measurement values and the at least one operation parameter.

### Claim 4 (depends on 1)

The ion implanter according to claim 1,
wherein the control device adjusts an operation parameter of the beam generation device, based on an evaluation result of the measurement validity of the at least one physical quantity of the ion beam.

### Claim 5 (depends on 1)

The ion implanter according to claim 1,
wherein the control device corrects a value of the at least one physical quantity of the ion beam by using the model.

### Claim 6 (depends on 1)

The ion implanter according to claim 1,
wherein the plurality of measurement devices include a first measurement device that measures the ion beam at an implantation position where the ion beam is incident into a wafer, and a second measurement device that measures the ion beam at a position different from the implantation position, and
the control device corrects a measurement value of the first measurement device by using the model.

### Claim 7 (depends on 5)

The ion implanter according to claim 5,
wherein the control device controls a dose in an implantation process in which a wafer is irradiated with the ion beam, based on a correction value of the at least one physical quantity of the ion beam.

### Claim 8 (depends on 1)

The ion implanter according to claim 1,
wherein the control device accumulates a plurality of the data sets acquired during a plurality of implantation processes based on the implantation recipes different from each other, and builds the model from the plurality of accumulated data sets.

### Claim 9 (depends on 8)

The ion implanter according to claim 8,
wherein the control device builds the model from the plurality of the data sets acquired during the plurality of implantation processes based on the implantation recipe which satisfies a predetermined condition.

### Claim 10 (depends on 8)

The ion implanter according to claim 8,
wherein the control device acquires information relating to an evaluation result of a semiconductor device manufactured by using the implantation process in which a wafer is irradiated with the ion beam, and builds the model from the data sets acquired during the implantation process used for manufacturing the semiconductor device having the evaluation result which satisfies a predetermined condition.

### Claim 11

A model generation method comprising:
acquiring a data set including a plurality of measurement values indicating at least one physical quantity of an ion beam generated based on an implantation recipe from a plurality of measurement devices that measure the ion beam; and
building a model representing a correlation between the plurality of measurement values from a plurality of the data sets acquired during a plurality of implantation processes based on the implantation recipe.