# US 2021/0280243 A1 · Semiconductor storage device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0280243 A1 - Document ID: US20210280243A1 - Status: Published application - Kind: A1 - Application number: 17/122,063 - Filed: 2020-12-15 - Published: 2021-09-09 - Earliest claimed: 2020-03-06 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Takayuki MIYAZAKI - Web page: https://patentgrep.com/patent/US20210280243A1 ## CPC - G11C 13/0026: {Bit-line or column circuits} - G11C 13/0028: {Word-line or row circuits} - G11C 13/0002: {using resistive RAM [RRAM] elements} - G11C 13/0004: {comprising amorphous/crystalline phase transition cells} - G11C 13/0023: {Address circuits or decoders} - G11C 13/003: {Cell access} - G11C 13/004: {Reading or sensing circuits or methods} - G11C 13/0061: {Timing circuits or methods} - G11C 13/0069: {Writing or programming circuits or methods} - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A memory includes first-lines, second-lines, and memory cells. Third-lines are provided to respectively correspond to groups each comprising m (m≥2) lines of the first-lines. A first selector selects a certain one of the first-lines from the groups and to connect the selected first-lines to the third-lines corresponding to the groups. Fourth-lines correspond to the third-lines. A second selector selects one of the third-lines and to connect the fourth-line to the selected third-line. A third selector selects a certain one of the second-lines. A first driver applied a voltage to the fourth-line. A second driver is connected to the third selector. The first driver charges the third-line corresponding to the first-line selected from the groups via the fourth-line. The first and second selectors bring the selected first-line and the third-line corresponding the first-line to an electrically floating state. The second driver applies a voltage to the selected second-line. ## Claims ### Claim 1 A semiconductor storage device comprising: a plurality of first lines; a plurality of second lines; a plurality of memory cells respectively connected between the first lines and the second lines; a plurality of third lines provided to respectively correspond to groups each comprising m (m≥2) lines of the first lines; a first selection circuit configured to select a certain one of the first lines from each of the groups and to connect the selected first lines to the third lines corresponding to the groups, respectively; at least one fourth line provided to correspond to the third lines; a second selection circuit configured to select a certain one of the third lines and to connect the fourth line to the selected third line; a third selection circuit configured to select a certain one of the second lines; a first driver configured to apply a voltage to the fourth line; and a second driver connected to the third selection circuit, wherein the first driver charges the third line corresponding to the first line selected from at least one of the groups via the fourth line, the first and second selection circuits bring the selected first line and the third line corresponding the first line to an electrically floating state, and the second driver applies a voltage to the selected second line. ### Claim 2 (depends on 1) The device of claim 1, wherein the first selection circuit connects the first lines and the third lines corresponding to the first lines to each other, and the second selection circuit disconnects the fourth line from the third lines. ### Claim 3 (depends on 1) The device of claim 1, wherein the first driver charges plural ones of the first lines selected from plural ones of the groups via the third lines respectively corresponding to the selected first lines, and the first and second selection circuits bring the selected first lines and the third lines corresponding to the first lines to an electrically floating state. ### Claim 4 (depends on 1) The device of claim 1, wherein the first driver charges the first line selected from at least one of the groups via the third and fourth lines, the first and second selection circuits bring the first line and the third and fourth lines corresponding to the first line to an electrically floating state while the first line and the third and fourth lines are kept connected to each other, and the second driver applies the voltage to the selected second line. ### Claim 5 (depends on 1) The device of claim 1, further comprising a plurality of first capacitor elements connected to correspond to the third lines, respectively. ### Claim 6 (depends on 5) The device of claim 5, further comprising a plurality of first switching elements connected between the third lines and the first capacitor elements, respectively. ### Claim 7 (depends on 6) The device of claim 6, wherein the first switching elements electrically disconnect the corresponding first capacitor elements from the corresponding third lines, respectively, in a read or write operation. ### Claim 8 (depends on 6) The device of claim 6, wherein the first switching elements electrically connect the corresponding first capacitor elements to the corresponding third lines, respectively. ### Claim 9 (depends on 5) The device of claim 5, further comprising a plurality of second capacitor elements connected to correspond to the third lines, respectively, and having different capacities from those of the first capacitor elements. ### Claim 10 (depends on 9) The device of claim 9, further comprising a plurality of second switching elements connected between the third lines and the second capacitor elements, respectively. ### Claim 11 (depends on 10) The device of claim 10, wherein the second switching elements electrically disconnect the corresponding second capacitor elements from the corresponding third lines, respectively, in a read or write operation. ### Claim 12 (depends on 10) The device of claim 10, wherein the second switching elements electrically connect the corresponding second capacitor elements to the corresponding third lines, respectively. ### Claim 13 (depends on 3) The device of claim 3, wherein number of the first lines and number of the third lines are equal, the first lines and the third lines being connected in an electrically floating state. ### Claim 14 (depends on 3) The device of claim 3, wherein the first lines selected by the first selection circuit are not adjacent to each other. ### Claim 15 (depends on 1) The device of claim 1, wherein the first selection circuit changes the first lines and the third lines to be connected to each other while the second driver applies the voltage to the selected second line, and the second selection circuit connects the third lines to the fourth line to charge the third lines each time the first lines and the third lines to be connected to each other are changed. ### Claim 16 (depends on 1) The device of claim 1, wherein each of the memory cells is a phase-change memory. ### Claim 17 A semiconductor storage device comprising: a plurality of first lines; a plurality of second lines; a plurality of memory cells respectively connected between the first lines and the second lines; a plurality of third lines provided to respectively correspond to groups each comprising m (m≥2) lines of the first lines; a first selection circuit configured to select a certain one of the first lines from each of the groups and to connect the selected first lines to the third lines corresponding to the groups, respectively; at least one fourth line provided to correspond to the third lines; a second selection circuit configured to select a certain one of the third lines and to connect the fourth line to the selected third line; a third selection circuit configured to select a certain one of the second lines; a first driver configured to apply a voltage to the fourth line; a second driver connected to the third selection circuit; and a plurality of first capacitor elements connected to correspond to the third lines, respectively. ### Claim 18 (depends on 17) The device of claim 17, further comprising a plurality of first switching elements connected between the third lines and the first capacitor elements, respectively. ### Claim 19 (depends on 18) The device of claim 18, wherein the first switching elements electrically disconnect the corresponding first capacitor elements from the corresponding third lines, respectively, in a read or write operation. ### Claim 20 (depends on 18) The device of claim 18, wherein the first switching elements electrically connect the corresponding first capacitor elements to the corresponding third lines, respectively. ### Claim 21 (depends on 17) The device of claim 17, further comprising a plurality of second capacitor elements connected to correspond to the third lines, respectively, and having different capacities from those of the first capacitor elements. ### Claim 22 (depends on 21) The device of claim 21, further comprising a plurality of second switching elements connected between the third lines and the second capacitor elements, respectively. ### Claim 23 (depends on 22) The device of claim 22, wherein the second switching elements electrically disconnect the corresponding second capacitor elements from the corresponding third lines, respectively, in a read or write operation. ### Claim 24 (depends on 22) The device of claim 22, wherein the second switching elements electrically connect the corresponding second capacitor elements to the corresponding third lines, respectively.