# US 2021/0278922 A1 · Semiconductor device and touch panel

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- Number: US 2021/0278922 A1
- Document ID: US20210278922A1
- Status: Published application
- Kind: A1
- Application number: 17/316,768
- Filed: 2021-05-11
- Published: 2021-09-09
- Earliest claimed: 2015-04-13
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei YAMAZAKI; Hajime KIMURA; Masami JINTYOU; Yasuharu HOSAKA; Naoto GOTO; Takahiro IGUCHI; Daisuke KUROSAKI; Junichi KOEZUKA
- Web page: https://patentgrep.com/patent/US20210278922A1

## CPC

- G06F 3/0412: {Digitisers structurally integrated in a display}
- G06F 3/04184: {Synchronisation with the driving of the display or the backlighting unit to avoid interferences generated internally}
- G06F 3/0446: {using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/80: characterised by the materials
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10K 59/40: OLEDs integrated with touch screens
- G06F 2203/04103: Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

## Claims

### Claim 1

A semiconductor device comprising:
a wiring;
a transistor comprising:
a gate electrode;a gate insulating film;
a semiconductor film having a channel formation region between the gate electrode and the gate insulating film; and
a source electrode and a drain electrode which are electrically connected to the semiconductor film,
a first insulating film over the semiconductor film, the source electrode, and the drain electrode;
a first metal oxide film, a second metal oxide film, and a third metal oxide film which are over and in contact with the first insulating film;
a second insulating film over the first metal oxide film, the second metal oxide film, and the third metal oxide film;
a pixel electrode over the second insulating film;
wherein the gate insulating film is in contact with the wiring, the gate electrode, the semiconductor film,
wherein a touch sensor comprises a first electrode and a second electrode,
wherein the wiring is electrically connected to the second metal oxide film,
wherein the first metal oxide film has a region overlapping with the semiconductor film with the first insulating film interposed therebetween,
wherein the first electrode comprises the second metal oxide film,
wherein the second electrode comprises the third metal oxide film,
wherein the first metal oxide film, the second metal oxide film, and the third metal oxide film are formed of a same material,
wherein the wiring and the gate electrode are formed of a same material,
wherein the wiring extends in a first direction in a plan view,
wherein the third metal oxide film extends in a second direction intersecting the first direction in the plan view.