# US 2021/0278767 A1 · Film forming material for lithography, composition for film formation for lithography, underlayer film for lithography, and method for forming pattern > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0278767 A1 - Document ID: US20210278767A1 - Status: Published application - Kind: A1 - Application number: 17/255,745 - Filed: 2019-06-24 - Published: 2021-09-09 - Earliest claimed: 2018-06-26 - Assignees: Mitsubishi Gas Chemical Company, Inc. - Applicants: Mitsubishi Gas Chemical Company, Inc. - Inventors: Masayoshi UENO; Kouichi YAMADA; Akifumi CHIBA; Ken SUGITO; Junya HORIUCHI; Takashi MAKINOSHIMA; Masatoshi ECHIGO - Web page: https://patentgrep.com/patent/US20210278767A1 ## CPC - G03F 7/094: {Multilayer resist systems, e.g. planarising layers} - C08F 2/48: by ultraviolet or visible light - C08F 2/50: with sensitising agents - C08F 6/008: {Treatment of solid polymer wetted by water or organic solvents, e.g. coagulum, filter cakes} - C08F 22/40: Imides, e.g. cyclic imides - C08F 122/40: Imides, e.g. cyclic imides - C08F 267/10: on to polymers of amides or imides - G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors} - G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition} - G03F 7/2026: {for the removal of unwanted material, e.g. image or background correction} - G03F 7/26: Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) - C08F 220/283: {and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate} - H10P 76/20: of masks comprising organic materials - H10P 76/405: {characterised by their composition, e.g. multilayer masks} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. A film forming material for lithography comprising a compound having a group of the following formula (0): can solve the problem described above. ## Claims ### Claim 1 A film forming material for lithography comprising a compound having a group of the following formula (0): ### Claim 2 (depends on 1) The film forming material for lithography according to claim 1, wherein the compound having a group of the above formula (0) is at least one selected from the group consisting of a polycitraconimide compound and a citraconimide resin. ### Claim 3 (depends on 1) The film forming material for lithography according to claim 1, wherein the compound having a group of the above formula (0) is at least one selected from the group consisting of a biscitraconimide compound and an addition polymerization citraconimide resin. ### Claim 4 (depends on 3) The film forming material for lithography according to claim 3, wherein the biscitraconimide compound is represented by the following formula (1): wherein Z is a divalent hydrocarbon group having 1 to 100 carbon atoms and optionally containing a heteroatom. ### Claim 5 (depends on 3) The film forming material for lithography according to claim 3, wherein the biscitraconimide compound is represented by the following formula (1A): wherein each X is independently a single bond, —O—, —CH2—, —C(CH3)2—, —CO—, —C(CF3)2—, —CONH—, or —COO—; A is a single bond, an oxygen atom, or a divalent hydrocarbon group having 1 to 80 carbon atoms and optionally containing a heteroatom; each R1 is independently a group having 0 to 30 carbon atoms and optionally containing a heteroatom; and each m1 is independently an integer of 0 to 4. ### Claim 6 (depends on 3) The film forming material for lithography according to claim 3, wherein the biscitraconimide compound is represented by the following formula (1A): wherein each X is independently a single bond, —O—, —CH2—, —C(CH3)2—, —CO—, —C(CF3)2—, —CONH—, or —COO—; A is a single bond, an oxygen atom, —(CH2)n—, —CH2C(CH3)2CH2—, —(C(CH3)2)—, —(O(CH2)m2)n—, —(O(C6H4))n—, or any of the following structures: Y is a single bond, —O—, —CH2—, —C(CH3)2—, —C(CF3)2—, each R1 is independently a group having 0 to 30 carbon atoms and optionally containing a heteroatom; n is an integer of 0 to 20; and m1 and m2 are each independently an integer of 0 to 4. ### Claim 7 (depends on 3) The film forming material for lithography according to claim 3, wherein the addition polymerization citraconimide resin is represented by the following formula (2): wherein each R2 is independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom; each m2 is independently an integer of 0 to 3; each m2′ is independently an integer of 0 to 4; and n is an integer of 1 to 4, or the following formula (3): wherein R3 and R4 are each independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom; each m3 is independently an integer of 0 to 4; each m4 is independently an integer of 0 to 4; and n is an integer of 1 to 4. ### Claim 8 (depends on 1) The film forming material for lithography according to claim 1, further comprising a crosslinking agent. ### Claim 9 (depends on 8) The film forming material for lithography according to claim 8, wherein the crosslinking agent is at least one selected from the group consisting of a phenol compound, an epoxy compound, a cyanate compound, an amino compound, a benzoxazine compound, a melamine compound, a guanamine compound, a glycoluril compound, a urea compound, an isocyanate compound, and an azide compound. ### Claim 10 (depends on 8) The film forming material for lithography according to claim 8, wherein the crosslinking agent has at least one allyl group. ### Claim 11 (depends on 8) The film forming material for lithography according to claim 8, wherein a content ratio of the crosslinking agent is 0.1 to 100 parts by mass based on 100 parts by mass of a total mass of the biscitraconimide compound and the addition polymerization citraconimide resin. ### Claim 12 (depends on 1) The film forming material for lithography according to claim 1, further comprising a crosslinking promoting agent. ### Claim 13 (depends on 12) The film forming material for lithography according to claim 12, wherein the crosslinking promoting agent is at least one selected from the group consisting of an amine, an imidazole, an organic phosphine, and a Lewis acid. ### Claim 14 (depends on 12) The film forming material for lithography according to claim 12, wherein a content ratio of the crosslinking promoting agent is 0.1 to 5 parts by mass based on 100 parts by mass of a total mass of the biscitraconimide compound and the addition polymerization citraconimide resin. ### Claim 15 (depends on 1) The film forming material for lithography according to claim 1, further comprising a radical polymerization initiator. ### Claim 16 (depends on 15) The film forming material for lithography according to claim 15, wherein the radical polymerization initiator is at least one selected from the group consisting of a ketone-based photopolymerization initiator, an organic peroxide-based polymerization initiator, and an azo-based polymerization initiator. ### Claim 17 (depends on 15) The film forming material for lithography according to claim 15, wherein a content ratio of the radical polymerization initiator is 0.05 to 25 parts by mass based on 100 parts by mass of a total mass of the biscitraconimide compound and the addition polymerization citraconimide resin. ### Claim 18 (depends on 1) A composition for film formation for lithography comprising the film forming material for lithography according to claim 1 and a solvent. ### Claim 19 (depends on 18) The composition for film formation for lithography according to claim 18, further comprising an acid generating agent. ### Claim 20 (depends on 18) The composition for film formation for lithography according to claim 18, wherein the film for lithography is an underlayer film for lithography. ### Claim 21 (depends on 20) An underlayer film for lithography formed by using the composition for film formation for lithography according to claim 20. ### Claim 22 (depends on 20) A method for forming a resist pattern, comprising the steps of: forming an underlayer film on a supporting material by using the composition for film formation for lithography according to claim 20; forming at least one photoresist layer on the underlayer film; and irradiating a predetermined region of the photoresist layer with radiation for development. ### Claim 23 (depends on 20) A method for forming a circuit pattern, comprising the steps of: forming an underlayer film on a supporting material by using the composition for film formation for lithography according to claim 20; forming an intermediate layer film on the underlayer film by using a resist intermediate layer film material containing a silicon atom; forming at least one photoresist layer on the intermediate layer film; irradiating a predetermined region of the photoresist layer with radiation for development, thereby forming a resist pattern; etching the intermediate layer film with the resist pattern as a mask; etching the underlayer film with the obtained intermediate layer film pattern as an etching mask; and etching the supporting material with the obtained underlayer film pattern as an etching mask, thereby forming a pattern on the supporting material. ### Claim 24 (depends on 1) A purification method comprising the steps of: obtaining an organic phase by dissolving the film forming material for lithography according to claim 1 in a solvent; and extracting impurities in the film forming material for lithography by bringing the organic phase into contact with an acidic aqueous solution (a first extraction step), wherein the solvent used in the step of obtaining the organic phase contains a solvent that does not inadvertently mix with water. ### Claim 25 (depends on 24) The purification method according to claim 24, wherein: the acidic aqueous solution is an aqueous mineral acid solution or an aqueous organic acid solution; the aqueous mineral acid solution contains one or more selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid; and the aqueous organic acid solution contains one or more selected from the group consisting of acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid, maleic acid, tartaric acid, citric acid, methanesulfonic acid, phenolsulfonic acid, p-toluenesulfonic acid, and trifluoroacetic acid. ### Claim 26 (depends on 24) The purification method according to claim 24, wherein the solvent that does not inadvertently mix with water is one or more solvents selected from the group consisting of toluene, 2-heptanone, cyclohexanone, cyclopentanone, methyl isobutyl ketone, propylene glycol monomethyl ether acetate, and ethyl acetate. ### Claim 27 (depends on 24) The purification method according to claim 24, further comprising the step of extracting impurities in the film forming material for lithography by bringing the organic phase into contact with water after the first extraction step (a second extraction step). ### Claim 28 An addition polymerization citraconimide resin represented by the following formula (2): wherein each R2 is independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom; each m2 is independently an integer of 0 to 3; each m2′ is independently an integer of 0 to 4; and n is an integer of 1 to 4, or the following formula (3): wherein R3 and R4 are each independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom; each m3 is independently an integer of 0 to 4; each m4 is independently an integer of 0 to 4; and n is an integer of 1 to 4. ### Claim 29 (depends on 28) The addition polymerization citraconimide resin according to claim 28, wherein R2, or R3 and R4 are each an alkyl group. ### Claim 30 (depends on 28) The addition polymerization citraconimide resin according to claim 28, wherein the heteroatom is selected from the group consisting of oxygen, fluorine, and silicon. ### Claim 31 (depends on 28) The addition polymerization citraconimide resin according to claim 28, wherein the heteroatom is oxygen.