# US 2021/0277031 A1 · Silicon precursor and method of manufacturing silicon-containing thin film using the same

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- Number: US 2021/0277031 A1
- Document ID: US20210277031A1
- Status: Published application
- Kind: A1
- Application number: 16/497,973
- Filed: 2019-04-24
- Published: 2021-09-09
- Earliest claimed: 2018-11-30
- Assignees: Hansol Chemical Co., Ltd.
- Applicants: Hansol Chemical Co., Ltd.
- Inventors: Jae-Seok AN; Jong-Ryul PARK; Min-Hyuk NIM; Jang-Hyeon SEOK; Jung Woo PARK
- Web page: https://patentgrep.com/patent/US20210277031A1

## CPC

- C07F 7/10: containing nitrogen {having a Si-N linkage}
- C07F 7/12: Organo silicon halides
- C23C 16/402: {Silicon dioxide}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6681: {the precursor containing a compound comprising Si}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/6687: {the compound comprising silicon and nitrogen}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.

## Claims

### Claim 1

A method of manufacturing a thin film, comprising:
introducing a vapor deposition precursor including any one or more compounds selected from the group consisting of a compound represented by Formula 1 below and a compound represented by Formula 2 below:
SiR1a(NR2R3)(4-a) [Formula 1]
In Formula 1,
a is an integer of 1 to 3,
R1 is a linear or branched, substituted or unsubstituted C1 to C4 hydrocarbon or an isomer thereof, and
R2 and R3 are each independently hydrogen, a linear or branched, substituted or unsubstituted C1 to C4 hydrocarbon, or an isomer thereof.
SiR4bR5c(X1)(4-b-c) [Formula 2]
In Formula 2,
each of b and c is an integer of 0 to 3,
the sum of b and c is an integer of 1 to 3,
X1 is a halogen group selected from the group consisting of Cl, Br, and I, and
R4 and R5 are each independently a linear or branched, substituted or unsubstituted C1 to C4 hydrocarbon, an unsubstituted C6 to C12 cyclic hydrocarbon, or an isomer thereof.

### Claim 2 (depends on 1)

The method according to claim 1, wherein R1 is any one selected from the group consisting of a methyl group, an ethyl group, a n-propyl group, an iso-propyl group, a n-butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group and an isomer thereof,
R2 and R3 are each independently any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, a n-propyl group, an iso-propyl group, a n-butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group and an isomer thereof, and
R4 and R5 are each independently any one selected from the group consisting of a methyl group, an ethyl group, a n-propyl group, an iso-propyl group, a n-butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group, an unsubstituted phenyl group, an unsubstituted benzyl group, an unsubstituted xylene group and an isomer thereof.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the vapor deposition precursor comprises any one or more selected from the group consisting of a compound of Formula 1 in which a is 1, and each of R1, R2 and R3 is a methyl group, and compounds of Formulas 2-1 to 2-4 below.

### Claim 4 (depends on 1)

The method according to claim 1, which is performed by atomic layer deposition (ALD) or chemical vapor deposition (CVD).

### Claim 5 (depends on 1)

The method according to claim 1, further comprising
injecting any one or more selected from the group consisting of oxygen (O2), water (H2O), ozone (O3), a mixture of O2 and hydrogen (H2), nitrogen (N2), ammonia (NH3), nitrous oxide (N2O), and hydrogen peroxide (H2O2) as a reactive gas.

### Claim 6 (depends on 1)

The method according to claim 1, further comprising
performing deposition at a process temperature of 600° C. or more.

### Claim 7 (depends on 1)

A thin film manufactured by the manufacturing method of claim 1, which has a surface roughness of 0.3 nm or less, and a density of 2.1 g/cm3 or more.

### Claim 8 (depends on 7)

An electronic device, comprising the thin film of claim 7.

### Claim 9 (depends on 8)

The electronic device according to claim 8, which is any one selected from the group consisting of a semiconductor, a display and a solar cell.