# US 2021/0276056 A1 · Condition selectable backside gas > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0276056 A1 - Document ID: US20210276056A1 - Status: Published application - Kind: A1 - Application number: 16/811,282 - Filed: 2020-03-06 - Published: 2021-09-09 - Earliest claimed: 2020-03-06 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Stephen D. Prouty; Martin Perez-Guzman; Sumanth Banda; Rajinder Dhindsa; Alvaro Garcia de Gorordo - Web page: https://patentgrep.com/patent/US20210276056A1 ## CPC - B08B 9/08: Cleaning containers, e.g. tanks - H10P 72/0434: {mainly by convection} - B08B 5/00: Cleaning by methods involving the use of air flow or gas flow (cleaning hollow articles by methods or apparatus specially adapted thereto B08B9/00) - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H01J 37/32715: {Workpiece holder} - H01J 37/32862: {In situ cleaning of vessels and/or internal parts} - H10P 72/72: using electrostatic chucks - H10P 72/722: {Details of electrostatic chucks} - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - B08B 2209/08: Details of machines or methods for cleaning containers, e.g. tanks - B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support. ## Claims ### Claim 1 A method of semiconductor processing, the method comprising: performing a process on a semiconductor substrate, the semiconductor substrate seated on a substrate support positioned within a processing region of a semiconductor processing chamber; flowing a first backside gas through the substrate support at a first flow rate; removing the semiconductor substrate from the processing region of the semiconductor processing chamber; performing a plasma cleaning operation within the processing region of the semiconductor processing chamber; and flowing a second backside gas through the substrate support at a second flow rate, wherein at least a portion of the second backside gas flows into the processing region through accesses in the substrate support. ### Claim 2 (depends on 1) The method of semiconductor processing of claim 1, wherein the plasma cleaning operation comprises an oxygen-containing precursor or a halogen-containing precursor. ### Claim 3 (depends on 2) The method of semiconductor processing of claim 2, wherein the second flow rate limits ingress of plasma byproducts into the accesses in the substrate support. ### Claim 4 (depends on 1) The method of semiconductor processing of claim 1, wherein the first backside gas and the second backside gas are non-reactive species. ### Claim 5 (depends on 4) The method of semiconductor processing of claim 4, wherein the first backside gas comprises helium, and wherein the second backside gas is nitrogen or a noble gas. ### Claim 6 (depends on 5) The method of semiconductor processing of claim 5, wherein the first backside gas comprises helium and at least one of argon or nitrogen. ### Claim 7 (depends on 5) The method of semiconductor processing of claim 5, wherein the first flow rate is less than or about 10 sccm, and wherein the second flow rate is greater than the first flow rate. ### Claim 8 (depends on 1) The method of semiconductor processing of claim 1, wherein the second flow rate is configured to provide contact of effluents during the plasma cleaning operation with the substrate support about the accesses of the substrate support. ### Claim 9 A method of semiconductor processing, the method comprising: flowing a first backside gas at a first flow rate through a substrate support in a processing region of a semiconductor processing chamber while processing a semiconductor substrate seated on the substrate support; removing the semiconductor substrate from the semiconductor processing chamber; performing a plasma cleaning operation within the processing region of the semiconductor processing chamber; and flowing a second backside gas through the substrate support at a second flow rate while performing the plasma cleaning operation, wherein at least a portion of the second backside gas flows into the processing region through accesses in the substrate support. ### Claim 10 (depends on 9) The method of semiconductor processing of claim 9, wherein the plasma cleaning operation comprises an oxygen-containing precursor or a halogen-containing precursor. ### Claim 11 (depends on 9) The method of semiconductor processing of claim 9, wherein the first backside gas and the second backside gas are non-reactive species. ### Claim 12 (depends on 11) The method of semiconductor processing of claim 11, wherein the first backside gas comprises helium, and wherein the second backside gas comprises non-reactive species including at least one of nitrogen or a noble gas. ### Claim 13 (depends on 12) The method of semiconductor processing of claim 12, wherein the first backside gas comprises helium and at least one of argon or nitrogen. ### Claim 14 (depends on 12) The method of semiconductor processing of claim 12, wherein the first flow rate is less than or about 10 sccm, and wherein the second flow rate is greater than the first flow rate. ### Claim 15 A method of semiconductor processing, the method comprising: performing a process on a semiconductor substrate, the semiconductor substrate seated on a substrate support within a processing region of a semiconductor processing chamber, wherein the process is performed while maintaining the substrate support at a temperature below or about 0° C.; raising the semiconductor substrate from the substrate support; forming a plasma of a post-treatment precursor within the processing region of the semiconductor processing chamber; flowing a non-reactive backside gas through the substrate support and between the semiconductor substrate and the substrate support; and increasing a temperature of the semiconductor substrate. ### Claim 16 (depends on 15) The method of semiconductor processing of claim 15, wherein raising the semiconductor substrate comprises separating the semiconductor substrate from the substrate support and supporting the semiconductor substrate on lift pins extending through the substrate support. ### Claim 17 (depends on 15) The method of semiconductor processing of claim 15, wherein the process is performed while maintaining the substrate support at a temperature below or about −100° C. ### Claim 18 (depends on 15) The method of semiconductor processing of claim 15, wherein the non-reactive backside gas comprises nitrogen or a noble gas. ### Claim 19 (depends on 15) The method of semiconductor processing of claim 15, wherein the non-reactive backside gas is flowed at a flow rate to limit ingress of particles between the semiconductor substrate and the substrate support. ### Claim 20 (depends on 15) The method of semiconductor processing of claim 15, wherein the non-reactive backside gas is flowed at a flow rate of up to or about 50 sccm.