Semiconductor device including heterojunction bipolar transistor

A semiconductor device, comprising:

• a substrate;
• at least one heterojunction bipolar transistor including
• a semiconductor unit including a collector layer, a base layer and an emitter layer that are sequentially formed on said substrate in such order, and
• an electrode unit including a collector electrode, a base electrode and an emitter electrode that are respectively disposed on said collector layer, said base layer and said emitter layer, said emitter electrode including an electrode wire that extends in a direction away from said emitter layer;
• an insulation unit covering said substrate and said heterojunction bipolar transistor such that said collector electrode, said base electrode and said emitter electrode are electrically isolated from one another, said insulation unit being formed with a plurality of openings respectively expose said collector electrode, said base electrode and said electrode wire of said emitter electrode;
• and
• a heat dissipation unit covering said electrode wire of said emitter electrode and exposed outwardly, said heat dissipation unit being made of an electrically conductive and heat dissipating material, and having a thickness that is not less than 3 μm.