Low Dimensional Material Device and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Tse Hung, Chao-Ching Cheng, Tse-An Chen, Hung-Li Chiang, Lain-Jong Li, Tzu-Chiang Chen
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Abstract
In an embodiment, a device includes: a dielectric fin on a substrate; a low-dimensional layer on the dielectric fin, the low-dimensional layer including a source/drain region and a channel region; a source/drain contact on the source/drain region; and a gate structure on the channel region adjacent the source/drain contact, the gate structure having a first width at a top of the gate structure, a second width at a middle of the gate structure, and a third width at a bottom of the gate structure, the second width being less than each of the first width and the third width.
Claims20
A method comprising:
- forming a dielectric fin on a substrate;
- forming a low-dimensional layer on the dielectric fin;
- forming a first source/drain contact and a second source/drain contact on the low-dimensional layer;
- growing a first self-assembled spacer and a second self-assembled spacer on the first source/drain contact and the second source/drain contact, respectively, a channel region of the low-dimensional layer disposed between the first self-assembled spacer and the second self-assembled spacer;
- forming a gate structure on the channel region;
- and
- after forming the gate structure, removing the first self-assembled spacer and the second self-assembled spacer.
A device comprising:
- a dielectric fin on a substrate;
- a low-dimensional layer on the dielectric fin, the low-dimensional layer comprising a source/drain region and a channel region;
- a source/drain contact on the source/drain region;
- and
- a gate structure on the channel region adjacent the source/drain contact, the gate structure having a first width at a top of the gate structure, a second width at a middle of the gate structure, and a third width at a bottom of the gate structure, the second width being less than each of the first width and the third width.
A device comprising:
- a dielectric fin on a substrate;
- a low-dimensional layer on the dielectric fin;
- a gate dielectric on the low-dimensional layer;
- a gate electrode on the gate dielectric, the gate electrode having concave sidewalls;
- and
- a source/drain contact adjacent the gate electrode and the gate dielectric, the source/drain contact having a first portion and a second portion, the first portion contacting a top surface of the low-dimensional layer, the second portion extending through the low-dimensional layer and contacting a sidewall of the low-dimensional layer, the first portion being wider than the second portion, the source/drain contact electrically connected to the low-dimensional layer.
Dependencies are inferred from the claim text.