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US 2021/0265498 A1Published application
Trench mosfets integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradation
AssigneeNami MOS CO., LTD.
InventorFu-Yuan HSIEH
Life of this patent
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Abstract
A semiconductor power device having shielded gate structure in an active area and trench field plate termination surrounding the active area is disclosed. A Zener diode connected between drain metal and source metal or gate metal for functioning as a SD or GD clamp diode. Trench field plate termination surrounding active area wherein only cell array located will not cause BV degradation when SD or GD poly clamped diode integrated.
Claims10
A semiconductor power device comprising:
- an epitaxial layer of a first conductivity type extending over a substrate;
- a plurality of first type trenches formed in said epitaxial layer in an active area, each of said first type trenches being filled with a shielded gate structure comprising a first poly-silicon in a lower portion to serve as a shielded electrode and a second poly-silicon layer in an upper portion to serve as a gate electrode, wherein said shielded electrode is insulated from said epitaxial layer by a first insulating film and said gate electrode is insulated from said epitaxial layer by a gate insulating film which has a thickness less than said first insulating film, wherein said shielded electrode and said gate electrode are insulated from each other by a second insulating film;
- a trench field plate termination area comprises at least a second type trench surrounding said active area, wherein each said second type trench is filled with said shielded gate and connected with said source metal.
- a Gate-Drain(GD) clamp diode formed between a gate metal and a drain metal along said device periphery;
- and
- a Gate-Source(GS) clamp diode formed between said gate metal and said source metal.
3 more elements
A semiconductor power device comprising:
- an epitaxial layer of a first conductivity type extending over a substrate;
- a plurality of first type trenches formed in said epitaxial layer in an active area, each of said first type trenches being filled with a shielded gate structure comprising a first poly-silicon in a lower portion to serve as a shielded electrode and a second poly-silicon layer in an upper portion to serve as a gate electrode, wherein said shielded electrode is insulated from said epitaxial layer by a first insulating film and said gate electrode is insulated from said epitaxial layer by a gate insulating film which has a thickness less than said first insulating film, wherein said shielded electrode and said gate electrode are insulated from each other by a second insulating film;
- a trench field plate termination area comprises at least a second type trench surrounding said active area, wherein each said second type trench is filled with said shielded gate and connected with said source metal.
- a Source-Drain(SD) clamp diode formed between a source metal and a drain metal along said device periphery;
- and
- a Gate-Source(GS) clamp diode formed between said gate metal and said source metal.
3 more elements
Dependencies are inferred from the claim text.