Semiconductor device

A semiconductor device comprising:

• a cell region including a drift layer of a first conductivity type provided between a first main surface and a second main surface opposite to the first main surface;
• a termination region surrounding the cell region and including the drift layer between the first main surface and the second main surface;
• a plurality of first trench gates including a plurality of first trench electrodes provided in a plurality of first trenches, with an insulation film therebetween, in opposed relation to the drift layer, the first trenches being provided to extend along the first main surface from a first end side of the cell region toward a second end side thereof opposite to the first end side, the first trenches being disposed adjacent to each other at a first spacing;
• a boundary trench gate including a boundary trench electrode provided in a boundary trench, with an insulation film therebetween, in opposed relation to the drift layer, the boundary trench being provided to extend in a direction intersecting a direction of extension of the first trenches, the boundary trench being connected to end portions of the respective first trenches, the boundary trench electrode being electrically connected to the first trench electrodes;
• and
• a plurality of second trench gates including a plurality of second trench electrodes provided in a plurality of second trenches, with an insulation film therebetween, in opposed relation to the drift layer, each of the second trenches having an end portion connected to the boundary trench, the second trenches being provided to extend toward the second end side of the cell region, the second trenches being disposed adjacent to each other at a second spacing different from the first spacing, the second trench electrodes being electrically connected to the boundary trench electrode.