Surface treatment and passivation for high electron mobility transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHan-Chin Chiu, Cheng-Yuan Tsai
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Abstract
A semiconductor device includes a compound semiconductor layer comprising a III-V material; a first layer on the compound semiconductor layer and comprising oxygen, nitrogen, and a material included in the compound semiconductor layer; a second layer over the first layer, wherein at least a portion of the second layer comprises a single crystalline structure or a polycrystalline structure; a dielectric layer over the second layer; and a source/drain electrode extending through the dielectric layer, the second layer, and the first layer and into the compound semiconductor layer.
Claims20
A semiconductor device, comprising:
- a compound semiconductor layer comprising a III-V material;
- a first layer on the compound semiconductor layer and comprising oxygen, nitrogen, and a material included in the compound semiconductor layer;
- a second layer over the first layer, wherein at least a portion of the second layer comprises a single crystalline structure or a polycrystalline structure;
- a dielectric layer over the second layer;
- and
- a source/drain electrode extending through the dielectric layer, the second layer, and the first layer and extending into the compound semiconductor layer.
A semiconductor device, comprising:
- a compound semiconductor layer comprising a III-V material;
- a first layer on the compound semiconductor layer and comprising oxygen, nitrogen, and a material included in the compound semiconductor layer, wherein at least a portion of the first layer is crystalline;
- a second layer over the first layer and comprises a different material than the first layer, wherein at least a portion of the second layer is single crystalline or polycrystalline;
- an opening at least in the first and the second layers;
- a third layer on the compound semiconductor layer and within the opening, wherein the third layer comprises oxygen, nitrogen, and a material included in the compound semiconductor layer;
- and
- a gate electrode at least partially extending in the opening and above the third layer.
A semiconductor device, comprising:
- a compound semiconductor layer comprising a III-V material;
- a first layer on the compound semiconductor layer and comprising oxygen, nitrogen, and a III element included in the compound semiconductor layer;
- a second layer over the first layer and comprises a different material than the first layer, wherein at least a portion of the second layer is single crystalline or polycrystalline;
- an opening at least in the first and the second layers;
- a third layer on the compound semiconductor layer and within the opening, wherein the third layer comprises oxygen, nitrogen, and a III element included in the compound semiconductor layer, and at least a portion of the third layer is crystalline;
- and a first dielectric layer at least partially extending in the opening and on the third layer.
Dependencies are inferred from the claim text.