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US 2021/0265479 A1Published application
Integrated circuit metal gate structure and method of fabricating thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYong-Tian HOU, Yuan-Shun CHAO, Chien-Hao CHEN, Cheng-Lung HUNG
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Abstract
A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The third metal layer includes an interface with a polysilicon layer.
Claims20
A method of fabricating a gate for a semiconductor device, comprising:
- depositing a gate dielectric layer;
- forming a gate electrode on the gate dielectric layer, wherein the forming the gate electrode includes:
- depositing a first layer directly over the gate dielectric layer, wherein the depositing the first layer includes depositing one of titanium nitride (TiN), titanium silicon nitride (TiSiN), or tantalum carbide (TaC);
- depositing a second layer selected from the group consisting of titanium oxynitride (TiON), oxidized carbon tantalum (TaCO), oxidized tantalum carbonitride (TaCNO), and combinations thereof, wherein the first layer and the second layer share a physical interface, and wherein one of the first layer or the second layer physically interfaces the gate dielectric layer;
- diffusing oxygen from the second layer to the gate dielectric layer;
- and
- after the diffusing, depositing a third layer over the first layer and the second layer, wherein the depositing the third layer includes depositing a nitride of one of tantalum or titanium, wherein the first layer, the second layer, and the third layer form a stack of the gate electrode;
- and
- forming gate spacers abutting the stack of the gate electrode.
6 more elements
A method of fabricating a gate for a semiconductor device, comprising:
- depositing a gate dielectric layer of a gate structure;
- forming a gate electrode of the gate structure on the gate dielectric layer, wherein the forming the gate electrode includes:
- depositing a first layer over the gate dielectric layer, wherein the depositing the first layer includes depositing a first composition of one of titanium nitride (TiN), titanium silicon nitride (TiSiN), or tantalum carbide (TaC);
- depositing a second layer over the gate dielectric layer, wherein the depositing the second layer includes forming a second composition selected from the group consisting of titanium oxynitride (TiON), oxidized carbon tantalum (TaCO), oxidized tantalum carbonitride (TaCNO), and combinations thereof, wherein after the depositing the first layer and the depositing the second layer, the second composition of the second layer directly contacts the first composition of the first layer;
- and
- depositing a third layer over the first layer and the second layer, wherein the depositing the third layer includes depositing a nitride of one of tantalum or titanium directly contacting the second layer;
- wherein the gate electrode comprises the deposited first layer, the deposited second layer, and the deposited the third layer.
4 more elements
A semiconductor device, comprising:
- a gate dielectric layer;
- a gate electrode formed on the gate dielectric layer, wherein the gate electrode includes:
- a first layer over the gate dielectric layer, wherein the first layer includes one of titanium nitride (TiN), titanium silicon nitride (TiSiN), or tantalum carbide (TaC);
- a second layer over the gate dielectric layer, wherein the second layer includes metal and oxygen, wherein the second layer is selected from the group consisting of titanium oxynitride (TiON), oxidized carbon tantalum (TaCO), oxidized tantalum carbonitride (TaCNO), or combinations thereof, wherein at least one of the first layer or the second layer directly interface the gate dielectric layer, and wherein the first layer and the second layer share an interface;
- and
- a third layer including metal nitride of one of tantalum or titanium directly on the second layer.
3 more elements
Dependencies are inferred from the claim text.